DYNEX DSF8025SE24

DSF8025SE
DSF8025SE
Fast Recovery Diode
Advance Information
Replaces March 1998 version, DS4146-4.4
DS4146-5.0 January 2000
KEY PARAMETERS
VRRM
2500V
IF(AV)
650A
IFSM
7500A
Qr
540µC
trr
5.0µs
APPLICATIONS
■ Induction Heating
■ A.C. Motor Drives
■ Inverters And Choppers
■ Welding
■ High Frequency Rectification
■ UPS
FEATURES
■ Double side cooling
■ High surge capability
■ Low recovery charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DSF8025SE25
2500
DSF8025SE24
2400
DSF8025SE23
2300
DSF8025SE22
2200
DSF8025SE21
2100
DSF8025SE20
2000
Lower voltage grades available.
Conditions
VRSM = VRRM + 100V
Outline type code: E
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
650
A
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
IF(RMS)
RMS value
Tcase = 65oC
1020
A
Continuous (direct) forward current
Tcase = 65oC
785
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
385
A
IF(RMS)
RMS value
Tcase = 65oC
604
A
Continuous (direct) forward current
Tcase = 65oC
465
A
IF
1/8
DSF8025SE
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
Conditions
Parameter
Surge (non-repetitive) forward current
Max.
Units
7.5
kA
281 x 103
A2s
6.0
kA
180 x 103
A2s
10ms half sine; with 0% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 150oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Conditions
Parameter
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Min.
Max.
Units
dc
-
0.047
o
Anode dc
-
0.094
o
Cathode dc
-
0.094
o
Double side
-
0.018
o
Single side
-
0.036
o
-
150
o
o
C/W
C/W
Single side cooled
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 8.0kN
with mounting compound
C/W
C/W
C/W
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
175
Clamping force
7.0
9.0
kN
Typ.
Max.
Units
-
On-state (conducting)
C
C
CHARACTERISTICS
Symbol
Conditions
VFM
Forward voltage
At 1000A peak, Tcase = 25oC
-
2.3
V
IRRM
Peak reverse current
At VRRM, Tcase = 150oC
-
50
mA
-
5.0
µs
trr
Reverse recovery time
Recovered charge (50% chord)
IF = 1000A, diRR/dt = 100A/µs
-
540
µC
IRM
Reverse recovery current
Tcase = 150oC, VR = 100V
-
235
A
K
Soft factor
1.8
-
-
QRA1
VTO
Threshold voltage
At Tvj = 150oC
-
1.48
V
rT
Slope resistance
At Tvj = 150oC
-
0.8
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
70
-
V
VFRM
2/8
Parameter
DSF8025SE
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
t2
k = t1/t2
τ
0.5x IRR
IRR
CURVES
4000
Measured under pulse conditions
3500
Instantaneous forward current IF - (A)
3000
2500
2000
1500
Tj = 150˚C
Tj = 25˚C
1000
500
0
1.0
2.0
3.0
4.0
Instantaneous forward voltage VF - (V)
Fig. 1 Maximum (limit) forward characteristics
3/8
DSF8025SE
500
Measured under pulse conditions
Instantaneous forward current IF - (A)
400
300
Tj = 150˚C
Tj = 25˚C
200
100
0
1.00
1.25
1.50
1.75
2.00
Instantaneous forward voltage VF - (V)
Fig. 2 Maximum (limit) forward characteristics
250
Current
waveform
VFR
Voltage
waveform
Transient forward votage VFP - (V)
200
δy
di = δy
dt δx
δx
150
Tj = 125˚C limit
100
Tj = 25˚C limit
50
0
0
500
1000
1500
2000
Rate of rise of forward current dIF/dt - (A/µs)
Fig. 3 Transient forward voltage vs rate of rise of forward current
4/8
DSF8025SE
100000
QS = ∫
IF
50µs
Conditions:
0
Tj = 150˚C,
VR = 100V
Reverse recovered charge QS - (µC)
QS
tp = 1ms
dIR/dt
10000
IRR
IF = 2000A
IF = 1000A
1000
IF = 200A
100
10
100
1000
Rate of rise of reverse current dIR/dt - (A/µs)
10000
Fig. 4 Recovered charge
10000
Conditions:
Tj = 150˚C,
Reverse recovery current IRR - (A)
VR = 100V
1000
A
B
C
100
10
A: IF = 2000A
B: IF = 1000A
C: IF = 200A
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig. 5 Typical reverse recovery current vs rate of fall of forward current
5/8
DSF8025SE
Thermal Impedance - Junction to case (˚C/W)
0.1
Anode side cooled
Double side cooled
0.01
0.001
0.001
0.01
0.1
Time - (s)
1.0
Fig. 6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
6/8
10
DSF8025SE
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)
Cathode
Ø42max
Ø25nom.
15
14
Ø25nom.
Anode
Nominal weight: 82g
Clamping force: 8kN ±10%
Package outine type code: E
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Recommendations for clamping power semiconductors
AN4839
Thyristor and diode measurement with a multi-meter
AN4853
Use of V , r on-state characteristic
AN5001
TO
T
7/8
DSF8025SE
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
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UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4146-5 Issue No. 5.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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