n Outline Drawing IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current) n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Equivalent Circuit n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *1 Ratings 600 ± 20 150 300 150 300 600 +150 -40 ∼ +125 2500 3.5 3.5 Units V V A W °C °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=150mA VGE=15V IC=150A VGE=0V VCE=10V f=1MHz VCC=300V IC=150A VGE=± 15V RG=16Ω IF=150A VGE=0V IF=150A Min. Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. 4.5 9900 2200 1000 0.6 0.2 0.6 0.2 Max. 1.0 15 7.5 2.8 Units mA µA V V pF 1.2 0.6 1.0 0.35 3.0 300 µs V ns • Thermal Characteristics Items Thermal Resistance Typ. 0.05 Max. 0.21 0.47 Units °C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j=25°C T j=125°C 350 350 V GE =20V,15V,12V V GE =20V,15V, 12V [A] 300 C 250 10V Collector current : I Collector current : I C [A] 300 200 150 100 50 250 10V 200 150 100 8V 50 8V 0 0 0 1 2 3 4 5 6 0 4 5 6 Collector-Emitter vs. Gate-Emitter voltage T j=25°C T j=125°C 10 [V] CE Collector-Emitter voltage : V 8 6 4 IC= 300A 150A 2 75A 0 8 6 IC= 4 300A 150A 2 75A 0 0 5 10 15 20 25 0 5 Gate-Emitter voltage : V GE [V] 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current Switching time vs. Collector current V CC =300V, R G =16 Ω , V GE =±15V, T j=25°C V CC =300V, R G =16 Ω , V GE =±15V, Tj=125°C 1000 , t r , t off , t f [nsec] t on t off on tr tf tr tf 100 Switching time : t Switching time : t 100 t off t on , t r , t off , t f [nsec] 1000 on 3 Collector-Emitter vs. Gate-Emitter voltage [V] CE 2 Collector-Emitter voltage : V CE [V] 10 Collector-Emitter voltage : V 1 Collector-Emitter voltage : V CE [V] 10 10 0 50 100 150 200 Collector current : I C [A] 250 0 50 100 150 200 Collector current : I C [A] 250 Switching time vs. R G Dynamic input characteristics V CC =300V, I C =150A, V GE =±15V, T j=25°C T j=25°C [V] CE Collector-Emitter voltage : V Switching time : t 25 V CC =200V t on t off 1000 tr tf on , t r , t off , t f [nsec] 500 100 10 300V 400 300 15 200 10 100 5 0 50 10 0 100 200 300 400 500 600 700 Gate resistance : R G [ Ω ] Gate charge : Q G [nC] Forward current vs. Forward voltage Reverse recovery characteristics V GE = O V t rr , I rr vs. I F 800 0 900 350 [A] rr [A] Reverse recovery current : I 200 150 100 50 t rr 125°C 100 I rr 125°C Reverse recovery time F Forward current : I 250 : trr [nsec] T j=125°C 25°C 300 0 t rr 25°C I rr 25°C 10 0 1 2 3 4 0 50 100 150 200 250 Forward voltage : V F [V] Forward current : I F [A] Transient thermal resistance +V GE =15V, -V GE <15V, T j<125°C, R G >16 Ω Reversed biased safe operating area 1 1400 [°C/W] Diode C Collector current : I th(j-c) Thermal resistance : R [A] 1200 IGBT 0,1 1000 SCSOA (non-repetitive pulse) 800 600 400 200 0,01 0,001 RBSOA (Repetitive pulse) 0 0,01 0,1 Pulse width : PW [sec] 1 20 400V 0 100 200 300 400 500 Collector-Emitter voltage : V CE [V] 600 Capacitance vs. Collector-Emitter voltage Switching loss vs. Collector current T j=25°C V CC =300V, R G =16 Ω , V GE =±15V 12 10 E off 25°C E on 125°C 6 E on 25°C 4 2 E rr 125°C Capacitance : C Switching loss : E 10 C ies 1 C oes ies 8 , C oes , C res [nF] E off 125°C on , E off , Err [mJ/cycle] 14 C res E rr 25°C 0 0 50 100 150 200 250 300 0 Collector Current : I C [A] 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V] Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House 2 Chalkhill Road Hammersmith D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 Specification is subject to change without notice Ma y97