FUJI ET401

ET401
FUJI POWER TRANSISTOR
TRIPLE DIFFUSED PLANER TYPE
HIGH VOLTAGE,HIGH SPEED SWITCHING
Outline Drawings
TO-3PF
Features
High voltage,High speed switching
Low saturation voltage
High reliability
Applications
Switching regulators
Ultrasonic generators
High frequency invertors
General purpose power amplifiers
JEDEC
EIAJ
(TO-3PF)
-
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Base current
Collector power disspation
Operating junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
500
400
7
15
5
80
+150
-55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Base leakage current
D.C. current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
*1
Switching time
Symbol
VCBO
VCEO(SUS)
VEBO
ICBO
hFE
VCE(Sat)
VBE(Sat)
ton
tstg
tf
Test Conditions
ICBO = 1mA
IC = 200mA
IEBO = 1mA
VCBO = 500V
IC = 6A, VCE = 5V
IC = 6A, IB = 1A
Min.
Typ.
Max.
Units
1.0
V
V
V
mA
1.0
1.5
0.5
1.5
0.15
V
V
µs
µs
µs
500
400
7
10
IC = 7.5A, IB1 = 1.5A
IB2 = -3A, RL = 20 ohm
Pw = 20µs Duty=<2%
0.25
1.0
0.07
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(j-c)
Test Conditions
Junction to case
Min.
Typ.
Max.
Units
1.56
°C/W
1
ET401
FUJI POWER TRANSISTOR
D.C. current gain hFE
Collector-Emitter voltage VCE[V]
Characteristics
Collector current IC[A]
Base current IB[A]
DC Current Gain
Collector current IC[A]
Saturation voltage VCE(sat), VBE(sat)[V]
Collector Output Characteristics
Collector current IC[A]
Base and Collector Saturation Voltage
Collector-Emitter voltage VCE[V]
Safe Operating Area
Switching time ton, tstg, tf [µs]
*1 Switching Time Test Circuit
Collector current IC[A]
Switching Time
2