Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1218A Unit: mm 2.1±0.1 ■ Features +0.1 0.3–0 0.65 1.3±0.1 0.65 3 Ratings Unit VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 0.15–0.05 Symbol 0 to 0.1 Parameter 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : Z (Ta=25˚C) Parameter Symbol Collector cutoff current 1 2 (Ta=25˚C) Collector to base voltage ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 0.9±0.1 ● 0.425 Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 0.1 µA 100 µA ICEO VCE = 10V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V hFE1 * VCE = 10V, IC = 2mA 160 hFE2 VCE = 2V, IC = 100mA 90 Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF Forward current transfer ratio *h FE1 460 0.3 V Rank classification Rank Q R S hFE1 160 ~ 260 210 ~ 340 290 ~ 460 Marking Symbol ZQ ZR ZS 1 2SD1819A Transistor PC — Ta IC — VCE 1200 Ta=25˚C 50 160 120 80 40 1000 140µA 40 120µA 100µA 30 80µA 60µA 20 40 60 80 100 120 140 160 2 4 6 8 10 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 200 Collector current IC (mA) 160 120 25˚C –25˚C 80 40 160 120 80 40 0 0 1.2 1.6 2.0 0 Base to emitter voltage VBE (V) 200 400 600 hFE — IC 1000 fT — I E Transition frequency fT (MHz) VCB=10V Ta=25˚C 500 400 Ta=75˚C 25˚C 300 –25˚C 200 100 0.3 1 3 10 30 Collector current IC (mA) 100 240 180 120 60 0 – 0.1 – 0.3 –1 –3 0.6 0.8 –10 –30 Emitter current IE (mA) 100 1.0 IC/IB=10 30 10 3 1 0.3 25˚C 0.1 Ta=75˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 30 Collector current IC (mA) 300 VCE=10V 0 0.1 800 Base current IB (µA) 600 0.4 VCE(sat) — IC 240 0.8 0.2 Base to emitter voltage VBE (V) IC — I B VCE=10V 0.4 0 Collector to emitter voltage VCE (V) 200 0 400 0 0 IC — VBE Ta=75˚C 600 200 20µA 0 20 800 40µA 10 Ambient temperature Ta (˚C) Collector current IC (mA) Base current IB (µA) 200 0 Forward current transfer ratio hFE VCE=10V Ta=25˚C IB=160µA 0 2 IB — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 240 –100 100