Datasheet - Hamamatsu Photonics

InGaAs PIN photodiodes
G12180 series
Photosensitive area from ϕ0.3 mm to ϕ5 mm
InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of
InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm to ϕ5 mm.
Features
Applications
Low noise, low dark current
Laser monitors
Low terminal capacitance
Optical power meters
Large photosensitive area
Laser diode life test
Various photosensitive area sizes available
NIR (near infrared) photometry
Optical communications
Options
Amplifier for InGaAs PIN photodiode
C4159-03
Heatsink for one-stage TE-cooled type
A3179
Heatsink for two-stage TE-cooled type
A3179-01
Temperature controller for TE-cooler type
C1103-04
Specifications/Absolute maximum ratings
Type no.
G12180-003A
G12180-005A
G12180-010A
G12180-020A
G12180-030A
G12180-050A
G12180-110A
G12180-120A
G12180-130A
G12180-150A
G12180-210A
G12180-220A
G12180-230A
G12180-250A
Dimensional
outline/
Package
Window
1
material*
(1)/K
(2)/K
Cooling
TO-18
TO-5
Noncooled
(3)/K
One-stage
TE-cooled
(4)/K
TO-8
(5)/K
Two-stage
TE-cooled
Absolute maximum ratings
Photosensitive
TE-cooler TE-cooler
Thermistor power
Storage
Reverse Operating
area
allowable allowable
dissipation
voltage temperature*2 temperature*2 Soldering
current voltage
conditions
(mm)
ϕ0.3
ϕ0.5
ϕ1
ϕ2
ϕ3
ϕ5
ϕ1
ϕ2
ϕ3
ϕ5
ϕ1
ϕ2
ϕ3
ϕ5
(mW)
(A)
(V)
(V)
(°C)
(°C)
-40 to
+100
-55 to
+125
20
-
-
-
10
5
2
1.5
1
5
2
0.2
1
1.2
260 °C
or less,
within 10 s
-40 to +70 -55 to +85
5
2
*1: K: borosilicate glass with anti-reflective coating (optimized for 1.55 μm peak)
*2: No dew condensation
When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
The G12180 series may be damaged by electrostatic discharge, etc. Be careful when using the G12180 series.
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1
InGaAs PIN photodiodes
G12180 series
Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
condition
Photosensitivity
S
Spectral Peak
response sensitivity
Type no. Element range wavelength
1.3 μm
λ
λp
temperature
(℃)
G12180-003A
G12180-005A
G12180-010A
G12180-020A
G12180-030A
G12180-050A
G12180-110A
G12180-120A
G12180-130A
G12180-150A
G12180-210A
G12180-220A
G12180-230A
G12180-250A
25
-10
-20
λ=λp
Terminal
Temper- Cutoff
Dark
Shunt
capaciature frequency
current
tance resistance
fc
coefficient
ID
Ct
Rsh
of dark VR=1 V
VR=1 V VR=10 mV
VR=1 V
current RL=50 Ω
f=1 MHz
∆TID
Min. Typ. Min. Typ. Typ. Max. VR=1 V
(μm) (μm) (A/W) (A/W) (A/W) (A/W) (nA) (nA)
0.1*3 0.5*3
0.15*3 0.75*3
0.8*3 4*3
0.9 to 1.7
1.5 7.5
2.5 12.5
5 25
0.02 0.1
1.55 0.8 0.9 0.9 1.1
1.09
0.1 0.5
0.9 to 1.67
0.15 0.8
0.33 1.67
0.01 0.06
0.04 0.2
0.9 to 1.65
0.07 0.35
0.15 0.75
Detectivity
D*
λ=λp
Noise
equivalent
power
NEP
λ=λp
Min. Typ. Typ. Max. Min. Typ. Min. Typ. Typ. Max.
(MHz) (MHz) (pF) (pF) (MΩ) (MΩ) (cm·Hz1/2/W) (cm·Hz1/2/W) (W/Hz1/2) (W/Hz1/2)
450*4 600*4 5*5 7.5*5 200 1000
4.2 × 10-15 1.2 × 10-14
160*4 200*4 15*5 20*5 80 400
7.0 × 10-15 1.9 × 10-14
25*4 60*4 55*5 120*5 25 125
1.4
× 10-14 3.8 × 10-14
2.4 × 1012 6.3 × 1012
4 13 250 800 6.5 30
2.8 × 10-14 7.5 × 10-14
2.5 7 450 1500 4 20
4.4 × 10-14 1.1 × 10-13
0.5 3 1000 7000 1.3 6.5
7.0 × 10-14 1.9 × 10-13
20 40 75 140 750 3750
2.0 × 10-15 5.4 × 10-15
4 13 250 800 200 900
4.0 × 10-15 1.1 × 10-14
1.6 × 1013 4.4 × 1013
2.5 7 450 1500 120 600
4.9 × 10-15 1.4 × 10-14
0.5 3 1000 7000 40 200
8.6 × 10-15 2.3 × 10-14
20 40 75 140 1750 8750
1.3 × 10-15 3.5 × 10-15
4 13 250 800 500 2000
2.7 × 10-15 6.5 × 10-15
2.6 × 1013 6.7 × 1013
2.5 7 450 1500 280 1400
3.2 × 10-15 8.7 × 10-15
0.5 3 1000 7000 90 500
5.3 × 10-15 1.5 × 10-14
*3: VR=5 V
*4: VR=5 V, RL=50 Ω, -3 dB
*5: VR=5 V, f=1 MHz
Spectral transmittance characteristics of
window material
Spectral response
(Typ.)
1.2
0.8
Transmittance (%)
Photosensitivity (A/W)
1.0
(Typ. Ta=25 °C)
100
Td=25 ˚C
Td=-10 ˚C
Td=-20 ˚C
0.6
0.4
95
90
0.2
0
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Wavelength (μm)
85
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
Wavelength (μm)
KIRDB0374EB
KIRDB0545EA
2
InGaAs PIN photodiodes
G12180 series
Linearity
(Typ. Ta=25 °C)
2
(Typ. Ta=25 °C, λ=1.3 μm, RL=2 Ω, VR=0 V)
102
100
Relative sensitivity (%)
Temperature coefficient of sensitivity (%/°C)
Photosensitivity temperature characteristics
1
0
G12180-010A
98
G12180-020A
96
G12180-030A
94
G12180-050A
92
-1
0.8
90
1.0
1.2
1.4
1.6
1.8
0
2
6
4
8
10
12
16
14
Incident light level (mW)
Wavelength (μm)
KIRDB0541EA
KIRDB0042EA
Dark current vs. reverse voltage
Non-cooled type
TE-cooled type
(Typ. Ta=25 °C)
100 nA
10 nA
G12180-120A
(Td=-10 °C)
100 pA
Dark current
Dark current
G12180-020A
1 nA
G12180-005A
10 pA
G12180-010A
100 pA
G12180-230A (Td=-20 °C)
G12180-003A
10 pA
0.01
G12180-130A
(Td=-10 °C)
Dotted line
G12180-150A (Td=-10 °C)
G12180-250A
(Td=-20 °C)
Solid line
G12180-030A
G12180-050A
(Typ.)
1 nA
0.1
1
10
G12180-110A
(Td=-10 °C)
100
Reverse voltage (V)
1 pA
0.01
0.1
G12180-220A (Td=-20 °C)
G12180-210A (Td=-20 °C)
1
10
Reverse voltage (V)
KIRDB0542EB
KIRDB0607EA
3
InGaAs PIN photodiodes
G12180 series
Terminal capacitance vs. reverse voltage
Shunt resistance vs. element temperature
(Typ. Ta=25 °C, f=1 MHz)
(Typ. VR=10 mV)
1 TΩ
10 nF
G12180-003A
100 GΩ
G12180-030A/
-130A/-230A
G12180-050A/-150A/-250A
G12180-005A
G12180-020A/
-120A/-220A
1 nF
G12180-010A/
-110A/-210A
100 pF
G12180-005A
Shunt resistance
Terminal capacitance
10 GΩ
10 pF
1 GΩ
100 MΩ
10 MΩ
G12180-020A/
-120A/-220A
1 MΩ
G12180-030A/
-130A/-230A
100 kΩ
10 kΩ
G12180-003A
1 pF
0.01
G12180-010A/
-110A/-210A
0.1
1
10
G12180-050A/-150A/-250A
1 kΩ
-40
100
-20
0
20
40
60
80
Element temperature (°C)
Reverse voltage (V)
KIRDB0544EB
KIRDB0543EB
Thermistor temperature characteristics
105
104
-20
0
20
One-stage
TE-cooled type
0
-20
Element temperature (°C)
Two-stage
TE-cooled type
-40
-60
20
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
40
Element temperature (°C)
Resistance (Ω)
Cooling characteristics of TE-cooler
(Typ.)
106
103
-40
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Current (A)
KIRDB0116EA
KIRDB0231EA
4
InGaAs PIN photodiodes
G12180 series
Current vs. voltage (TE-cooler)
Dimensional outlines (unit: mm)
(1) G12180-003A/-005A/-010A
(Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W)
1.6
ϕ5.4 ± 0.2
1.4
1.0
2.6 ± 0.2
Window
ϕ2.2 min.
3.7 ± 0.2
One-stage
TE-cooled type
1.2
0.8
Photosensitive
surface
0.6
Two-stage
TE-cooled type
0.4
13 min.
Current (A)
ϕ4.7 ± 0.1
ϕ0.45
Lead
0.2
ϕ2.5 ± 0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Voltage (V)
KIRDB0115EB
Case
KIRDA0150EC
5
InGaAs PIN photodiodes
ϕ12.4 ± 0.1
ϕ0.45
Lead
0.5
Photosensitive
surface
ϕ0.45
Lead
ϕ7.5 ± 0.2
ϕ5.1 ± 0.3
2.8 ± 0.2
Window
ϕ7.0 min.
18 min.
Photosensitive
surface
0.4 max.
Window
ϕ4.5 min.
4.9 ± 0.2
ϕ13.8 ± 0.2
ϕ8.3 ± 0.1
2.5 ± 0.2
ϕ9.2 ± 0.2
4.9 ± 0.2
(3) G12180-050A
14 min.
(2) G12180-020A/-030A
G12180 series
Index mark
ϕ1.0
ϕ1.5 max.
Case
Case
KIRDA0052EC
KIRDA0155EB
6
InGaAs PIN photodiodes
G12180 series
(4) G12180-110A/-120A/-130A/-150A
(5) G12180-210A/-220A/-230A/-250A
ϕ15.3 ± 0.2
ϕ14 ± 0.2
ϕ14 ± 0.2
6.4 ± 0.2
ϕ15.3 ± 0.2
A
12 min.
ϕ0.45
Lead
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
10.2 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
ϕ0.45
Lead
Photosensitive
surface
12 min.
Photosensitive
surface
10 ± 0.2
Window
ϕ10 ± 0.2
A
Window
ϕ10 ± 0.2
5.1 ± 0.2
5.1 ± 0.2
Detector (anode)
Detector (cathode)
TE-cooler (-)
TE-cooler (+)
Thermistor
Distance from photosensitive
area center to cap center
-0.3≤X≤+0.3
-0.3≤Y≤+0.3
A
G12180-110A
G12180-120A
/-130A/-150A
4.3 ± 0.2
4.4 ± 0.2
KIRDA0246EA
Detector (anode)
Detector (cathode)
TE-cooler (-)
TE-cooler (+)
Thermistor
Distance from photosensitive
area center to cap center
-0.3≤X≤+0.3
-0.3≤Y≤+0.3
A
G12180-210A
G12180-220A
/-230A/-250A
6.6 ± 0.2
6.7 ± 0.2
KIRDA0247EA
7
InGaAs PIN photodiodes
G12180 series
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Metal, ceramic, Plastic products
Technical information
∙ Infrared detectors
Information described in this material is current as of July, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KIRD1121E04 Jul. 2015 DN
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