HITACHI 2SJ160

2SJ160, 2SJ161, 2SJ162
Silicon P-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
•
•
•
•
•
•
•
Good frequency characteristic
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
Suitable for audio power amplifier
2SJ160, 2SJ161, 2SJ162
Outline
TO-3P
D
1
G
2
3
1. Gate
2. Source
(Flange)
3. Drain
S
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SJ160
Symbol
Ratings
Unit
VDSX
–120
V
2SJ161
–140
2SJ162
–160
Gate to source voltage
VGSS
±15
V
Drain current
ID
–7
A
Body to drain diode reverse drain current
I DR
–7
A
1
Channel dissipation
Pch*
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. Value at TC = 25°C
2SJ160, 2SJ161, 2SJ162
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
V(BR)DSX
Typ
Max
Unit
Test conditions
–120
—
—
V
I D = –10 mA , VGS = 10 V
Drain to source
2SJ160
breakdown voltage
2SJ161
–140
—
—
V
2SJ162
–160
—
—
V
Gate to source breakdown
voltage
V(BR)GSS
±15
—
—
V
I G = ±100 µA, VDS = 0
Gate to source cutoff voltage
VGS(off)
–0.15
—
–1.45
V
I D = –100 mA, VDS = –10 V
Drain to source saturation
voltage
VDS(sat)
—
—
–12
V
I D = –7 A, VGD = 0*1
Forward transfer admittance
|yfs|
0.7
1.0
1.4
S
I D = –3 A, VDS = –10 V*1
Input capacitance
Ciss
—
900
—
pF
VGS = 5 V, VDS = –10V,
Output capacitance
Coss
—
400
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
40
—
pF
Turn-on time
t on
—
230
—
ns
Turn-off time
t off
—
110
—
ns
Note:
VDD = –20 V, ID = –4 A
1. Pulse test
3
2SJ160, 2SJ161, 2SJ162
Maximum Safe Operation Area
Power vs. Temperature Derating
–20
150
10
ms
1
Sh
Sh
ot)
=
(T C
s(
(1
n
ot
25
)
°C
–1.0
)
Drain Current ID (A)
=
tio
–2
(–120 V, –0.83 A)
(–140 V, –0.71 A)
(–160 V, –0.63 A)
2SJ160
2SJ161
2SJ162
–0.5
–0.2
–5
150
Typical Output Characteristics
Typical Transfer Characteristics
–1.0
TC = 25°C
VDS = –10 V
–9
–7
–6
–6
–5
–4
–4
Pch
0W
–3
–2
= 10
T
–8
C
–0.8
Drain Current ID (A)
–8
75
–10
–10 –20
–50 –100 –200 –500
Drain to Source Voltage VDS (V)
25
°C
25
50
100
Case Temperature TC (°C)
=–
0
Drain Current ID (A)
PW
ra
50
e
Op
100
ID max (Continuous)
PW
(–14.3 V,
–5 –7 A)
=
10
0
m
DC
Channel Dissipation Pch (W)
Ta = 25°C
–10
–0.6
–0.4
–0.2
–2
–1 V
VGS = 0
0
4
–10
–30
–40
–20
–50
Drain to Source Voltage VDS (V)
0
–0.4
–1.2
–1.6
–2.0
–0.8
Gate to Source Voltage VGS (V)
–10
–5
–2
–1.0
–0.5
75
–10
10
°C
25
–5
=–
Drain to Source Saturation Voltage
vs. Drain Current
VGD = 0
25
TC
Input Capacitance vs.
Gate to Source Voltage
VDS = –10 V
f = 1 MHz
4
2
6
8
Gate to Source Voltage VGS (V)
–10
–8
–6
–4
–2
0
3.0
1.0
0.3
0.1
0.03
0.01
0.003
10 k
Drain to Source Voltage VDS (V)
Forward Transfer Admittance yfs (S)
–0.2
0
–0.1
–0.1 –0.2
–0.5 –1.0 –2
Drain Current ID (A)
100
200
500
1,000
Drain to Source Saturation Voltage VDS (sat) (V)
Input Capacitance Ciss (pF)
2SJ160, 2SJ161, 2SJ162
Drain to Source Voltage vs.
Gate to Source Voltage
–5
–2
ID = –1 A
10 M
–2
–6
–8
–4
–10
Gate to Source Voltage VGS (V)
3M
Forward Transfer Admittance
vs. Frequency
TC = 25°C
VDS = –10 V
ID = –2 A
30 k 100 k 300 k 1 M
Frequency f (Hz)
5
2SJ160, 2SJ161, 2SJ162
Switching Time vs. Drain Current
Switching Time ton, toff (ns)
500
200
ton
100
50
toff
20
10
5
–0.1 –0.2
–5
–0.5 –1.0 –2
Drain Current ID (A)
Switching Time Test Circuit
–10
Waveforms
Output
10%
RL
Input
Input
90%
ton
PW = 50 µs
duty ratio
= 1%
–20 V
toff
90%
50 Ω
Output
10%
6
15.6 ± 0.3
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Unit: mm
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
—
Conforms
5.0 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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