3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712A (Z) 2nd. Edition Dec. 1998 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline 3SK322 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate 1 to source voltage VG1S ±8 V Gate 2 to source voltage VG2S ±8 V Drain current ID 25 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2 3SK322 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSX 12 — — V I D = 200 µA , VG1S = –3 V, VG2S = –3 V Gate 1 to source breakdown voltage V(BR)G1SS ±8 — — V I G1 = ±10 µA, VG2S = VDS = 0 Gate 2 to source breakdown voltage V(BR) G2SS ±8 — — V I G2 = ±10 µA, VG1S = VDS = 0 Gate 1 cutoff current I G1SS — — ±100 nA VG1S = ±6 V, VG2S = VDS = 0 Gate 2 cutoff current I G2SS — — ±100 nA VG2S = ±6 V, VG1S = VDS = 0 Drain current I DS(on) 0.5 — 10 mA VDS = 6 V, VG1S = 0.75V, VG2S = 3 V Gate 1 to source cutoff voltage VG1S(off) 0 — +1.0 V VDS = 10 V, VG2S = 3V, I D = 100 µA Gate 2 to source cutoff voltage VG2S(off) 0 — +1.0 V VDS = 10 V, VG1S = 3V, I D = 100 µA Forward transfer admittance |yfs| 16 20 — mS VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 kHz Input capacitance Ciss 2.4 2.9 3.4 pF VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 MHz Output capacitance Coss 0.8 1.0 1.4 pF Reverse transfer capacitance Crss — 0.023 0.04 pF Power gain PG 22 25 — dB Noise figure NF — 1.0 1.8 dB Power gain PG 12 15 — dB Noise figure NF — 3.2 4.5 dB Noise figure NF — 2.8 3.5 dB VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 200 MHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 900 MHz VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 60 MHz Note: Marking is “ZW–” 3 3SK322 Main Characteristics 4 3SK322 5 3SK322 6 3SK322 7 3SK322 8 3SK322 9 3SK322 10 3SK322 S Parameter (VDS = 6 V, VG2S = 3 V, ID = 10 mA, ZO = 50 Ω) Freq. S11 S21 S12 S22 (MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 50 0.994 –5.8 2.04 173.6 0.00116 76.9 0.993 –2.2 100 0.993 –11.0 2.02 167.4 0.00132 85.7 0.993 –4.5 150 0.986 –16.8 2.00 161.5 0.00229 78.2 0.991 –6.4 200 0.980 –22.5 1.98 155.5 0.00313 73.5 0.990 –8.5 250 0.973 –27.8 1.94 149.6 0.00427 68.7 0.987 –10.5 300 0.950 –33.0 1.90 142.6 0.00473 63.9 0.985 –12.5 350 0.936 –38.3 1.86 137.1 0.00536 64.3 0.982 –14.4 400 0.924 –43.4 1.83 131.6 0.00561 64.5 0.979 –16.2 450 0.912 –48.0 1.77 126.8 0.00562 60.9 0.975 –18.2 500 0.893 –52.5 1.71 121.0 0.00640 53.5 0.971 –20.2 550 0.874 –57.3 1.67 115.5 0.00638 49.3 0.967 –22.0 600 0.859 –62.0 1.64 111.1 0.00647 49.0 0.964 –23.9 650 0.846 –66.1 1.58 106.7 0.00667 50.2 0.960 –25.8 700 0.829 –69.8 1.50 102.1 0.00694 49.3 0.955 –27.6 750 0.810 –74.2 1.46 97.1 0.00661 46.6 0.952 –29.4 800 0.802 –78.0 1.44 92.7 0.00618 43.7 0.948 –31.2 850 0.791 –81.6 1.38 88.9 0.00622 44.7 0.944 –33.2 900 0.778 –84.6 1.34 84.2 0.00615 43.6 0.940 –35.1 950 0.756 –88.5 1.30 80.2 0.00576 45.1 0.935 –36.8 1000 0.751 –92.2 1.26 75.9 0.00562 40.7 0.932 –38.5 11 3SK322 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 12