HITACHI BB301M

BB301M
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-506
1st. Edition
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
BB301M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
6
V
Gate 1 to source voltage
VG1S
+6
–0
V
Gate 2 to source voltage
VG2S
±6
V
Drain current
ID
25
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
2
BB301M
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
6
—
—
V
I D = 200 µA
VG1S = VG2S = 0
Gate 1 to source breakdown
voltage
V(BR)G1SS
+6
—
—
V
I G1 = +10 µA
VG2S = VDS = 0
Gate 2 to source breakdown
voltage
V(BR)G2SS
±6
—
—
V
I G2 = ±10 µA
VG1S = VDS = 0
Gate 1 to source cutoff current I G1SS
—
—
+100
nA
VG1S = +5 V
VG2S = VDS = 0
Gate 2 to source cutoff current I G2SS
—
—
±100
nA
VG2S = ±5 V
VG1S = VDS = 0
Gate 1 to source cutoff voltage VG1S(off)
0.4
—
1.0
V
VDS = 5 V, VG2S = 4 V
I D = 100 µA
Gate 2 to source cutoff voltage VG2S(off)
0.4
—
1.0
V
VDS = 5 V, VG1S = 5 V
I D = 100 µA
Drain current
I D(op)
10
15
20
mA
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 100 kΩ
Forward transfer admittance
|yfs|
15
20
—
mS
VDS = 5 V, VG1 = 5 V
VG2S = 4 V
RG = 100 kΩ, f = 1 kHz
Input capacitance
Ciss
2.2
3.0
4.0
pF
VDS = 5 V, VG1 = 5 V
Output capacitance
Coss
0.9
1.2
1.6
pF
VG2S = 4 V, RG = 100 kΩ
Reverse transfer capacitance
Crss
—
0.018
0.04
pF
f = 1 MHz
Power gain
PG
22
26
—
dB
VDS = 5 V, VG1 = 5 V
VG2S = 4 V
Noise figure
NF
—
1.3
1.9
dB
RG = 100 kΩ, f = 200 MHz
Note: Marking is “AW–”.
3
BB301M
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
Application Circuit
V DS = 5 V
VAGC = 4 to 0.3 V
BBFET
Input
RG
V GG = 5 V
4
Output
BB301M
30
25
Drain Current ID (mA)
150
100
50
VG2S = 4 V
VG1 = VDS
20
15
10
5
RG =
50
100
150
0
200
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
5
Ω
100 k Ω
120 k Ω
150 k Ω
180 k Ω
R G = 220 k Ω
16
12
3
82 k Ω
VDS = 5 V
RG = 82 kΩ
V
Ω
k
56
47
68 k
Drain Current ID (mA)
10
5
20
kΩ
15
1
2
3
4
Drain to Source Voltage VDS (V)
Drain Current vs. Gate1 Voltage
25
20
Ω
k
82 k Ω
0
10 k Ω
0
12 0 k Ω
15 k Ω
180
kΩ
220
V
0
Drain Current ID (mA)
Typical Output Characteristics
4
Channel Power Dissipation Pch (mW)
200
47
5 k
68 6 k Ω
k Ω
Ω
Maximum Channel Power
Dissipation Curve
2V
8
4
VG2S = 1 V
VDS = VG1 = 5 V
0
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
5
BB301M
Drain Current vs. Gate1 Voltege
Drain Current vs. Gate1 Voltege
20
VDS = 5 V
RG = 150 kΩ
VDS = 5 V
RG = 100 kΩ
V
4
V
12
Drain Current ID (mA)
16
3
Drain Current ID (mA)
16
20
8
2V
4
12
2V
4
VG2S = 1 V
30
25
20
V DS = 5 V
R G = 82 k Ω
f = 1 kHz
4V
3V
15
10
2V
5
V G2S = 1 V
1
2
3
4
Gate1 Voltage VG1 (V)
0
5
Forward Transfer Admittance
vs. Gate1 Voltage
0
6
1
2
3
4
Gate1 Voltage VG1 (V)
VG2S = 1 V
Forward Transfer Admittance |y fs | (mS)
Forward Transfer Admittance |y fs | (mS)
0
3V
4V
8
5
1
2
3
4
Gate1 Voltage VG1 (V)
5
Forward Transfer Admittance
vs. Gate1 Voltage
30
V DS = 5 V
R G = 100 k Ω
25
f = 1 kHz
20
4V
3V
15
2V
10
5
V G2S = 1 V
0
1
2
3
4
Gate1 Voltage VG1 (V)
5
Forward Transfer Admittance
vs. Gate1 Voltage
Power Gain vs. Gate Resistance
30
20
VDS = 5 V
RG = 150 kΩ
16 f = 1 kHz
25
4V
3V
12
Power Gain PG (dB)
Forward Transfer Admittance |y fs | (mS)
BB301M
2V
8
4
20
15
10
5
VG2S = 1 V
0
1
2
3
4
Gate1Voltage VG1 (V)
0
10
5
Noise Figure vs. Gate Resistance
100 200
500 1000
Power Gain vs. Drain Current
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 200 MHz
25
Power Gain PG (dB)
Noise Figure NF (dB)
50
30
2
1
20
15
10
5
0
10
20
Gate Resistance RG (kΩ)
4
3
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
f = 200 MHz
20
50
100 200
500 1000
Gate Resistance RG (kΩ)
0
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
RG = variable
f = 200 MHz
5
10
15
20
25
30
Drain Current ID (mA)
7
BB301M
Drain Current vs. Gate Resistance
Noise Figure vs. Drain Current
30
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
RG = variable
f = 200 MHz
3
25
Drain Current ID (mA)
Noise Figure NF (dB)
4
2
1
20
15
10
5
0
5
10
15
20
25
0
10
30
100 200
500 1000
Gain Reduction vs.
Gate2 to Source Voltage
Input Capacitance vs.
Gate2 to Source Voltage
4
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
RG = 100 k Ω
f = 200 MHz
50
40
Input Capacitance Ciss (pF)
Gain Reduction GR (dB)
50
Gate Resistance RG (kΩ)
30
20
10
1
2
3
4
Gate2 to Source Voltage VG2S (V)
8
20
Drain Current ID (mA)
60
0
VDS = 5 V
VG1 = 5 V
VG2S = 4 V
5
3
2
1
0
V DS = 5 V
V G1 = 5 V
R G = 100 k Ω
f = 1 MHz
1
2
3
4
Gate2 to Source Voltage VG2S (V)
5
BB301M
Package Dimentions
Unit: mm
+ 0.3
2.8 – 0.1
+ 0.1
0.4 – 0.05
0.4 – 0.05
3
0.65 – 0.3
+ 0.1
+ 0.1
1.9
0.95 0.95
+ 0.1
0.16 – 0.06
+ 0.2
2.8 – 0.6
1.5
2
0 ~ 0.1
0.95
0.85
0.65– 0.3
+ 0.1
0.6 – 0.05
+ 0.1
1
4
+ 0.1
0.4 – 0.05
+ 0.2
1.1– 0.1
0.3
1.8
Hitachi Code
EIAJ
JEDEC
MPAK–4
SC–61AA
—
9
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
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products.
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