MBT5401 MBT5401 SILICON P-N-P HIGH-VOLTAGE TRANSISTOR 1 3 ABSOLUTE MAXIMUM RATINGS 2 Descriptions Symbol Min. Typ. Max. Unit Tstg Tj Ptot VCBO VCEO VEBO IC Storage Temperature Junction Temperature Maximum Power Dissipation (Ta=25 C ) Maximum Collector to Base Voltage Maximum Collector to Emitter Voltage Maximum Emitter to Base Voltage Maximum Collector Current 55 150 150 250 160 150 5 500 C C mW V V V mA 1. BASE 3. EMITTER 2. COLLECTOR Type SOT-23 Color Code Marking Black MBT5401 ELECTRICAL CHARACTERISTICS (Ta 25 C) Test Conditions Descriptions DC Current Gain Gain Bandwidth product Output Capacitance Collector Cut-off Current Collector Saturation Voltage Base Saturation Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Small-Signal Current Gain Pulse Test VCE 5V, I C VCE 5V, I C VCE 5V, I C VCE 10V, I C VCB 10V, I E VCB 120V, I E VCB 120V, I E I C 10mA, I B I C 50mA, I B I C 10mA, I B I C 50mA, I B I C 100uA I E I C 1mA, I B I C 0mA, I E VCB 10V, I E Symbol h FE1 h FE2 h FE3 fT C ob 1mA 10mA 50mA 10mA 0mA, f 1MHz 0mA 0mA, Tamb 150 C 1mA Min. Typ. 8.0 50 50 0.2 0.5 1 1 ICBO V CE(Sat) 5mA 1mA V BE(Sat ) 5mA BVCBO BVCEO 0 0 10uA 1mA, f 1kHz 160 150 5 40 BVEBO h fe Max. Unit 240 50 60 50 100 MHz PF uA uA V V V V V V V 200 300 S, Duty Cycle. 2% THERMAL CHARACTERISTICS Descriptions Thermal Resistance at Tj P(Rth j-t +Rth t-s+Rth s-a) +Tamb Symbol R th j-a Min. Typ. Max. 500 Unit K/W P/N MBT5401 Marking 2L TEL:(852)23413351 FAX:(852)27978275 WEB SITE:http://www.daiwahk.com