STA343 Semiconductor PNP Silicon Transistor Descriptions • High voltage application • Color TV chroma output application Features • Collector-Emitter voltage VCEO=-300V • Complementary pair with STC344 Ordering Information Type NO. Marking STA343 STA343 Package Code MPT Outline Dimensions unit : mm 1.2 Max. 12.5 Min. 0.70 Max. 0.4~0.6 1 2 3 2.5±0.1. 0.5±0.2 2.0±0.1 5.0±0.2 3.4±0.2 21.5±1.0 1.1±0.1 8.5±0.2 6.5±0.2 KST-B004-001 PIN Connections 1. Emitter 2. Collector 3. Base 1 STA343 (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -300 V Collector-Emitter voltage VCEO -300 V Emitter-Base voltage VEBO -7 V Collector current IC -100 mA Emitter Current IE 100 mA Collector dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -300 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -300 - - V Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -7 - - V Collector cut-off current ICBO VCB=-300V, IE=0 - - -0.5 µA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.5 µA DC current gain hFE VCE=-10V, IC=-10mA 40 - 300 - VCE(sat) IC=-10mA, IB=-1mA - - -0.5 V fT VCE=-10V, IC=-20mA 50 85 - MHz - 6 - pF Collector-Emitter saturation voltage Transition frequency Collector output capacitance Cob VCB=-20V, IE=0, f=1MHz KST-B004-001 2 STA343 Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 3 fT - IC Fig. 2 VCE(sat) - IC Fig. 4 COb - VR KST-B004-001 3