ETC FMMT2369

FMMT2369
FMMT2369A
ISSUE 3 – AUGUST 1995
APPLICATIONS
These devices are suitable for use in high speed, low current
switching applications
tON CIRCUIT
t1
+10.6V
3V
3K3Ω
CS < 4pF *
-1.5V
< 1ns
tOFF CIRCUIT
t1
+10.75V
3V
270Ω
B
SOT23
< 1ns
Pulse width (t1)=300ns
Duty cycle = 2%
STORAGE TEST CIRCUIT
t1
10V
980Ω
500Ω
0
< 1ns
Pulse width (t1)=300ns
Duty cycle = 2%
* Total shunt capacitance of test jig and connectors
3-69
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCES
40
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
4.5
V
Continuous Collector Current
IC
200
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
PARAMETER
CS < 4pF *
-4.15V
PARAMETER
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
3K3Ω
-4V
PARTMARKING DETAILS
FMMT2369
- 1J
FMMT2369R
- 9R
FMMTA2369A - P5
FMMTA2369AR - 9A
ABSOLUTE MAXIMUM RATINGS.
Pulse width (t1)=300ns
Duty cycle = 2%
+6V
E
C
270Ω
0
0
FMMT2369
FMMT2369A
SOT23 NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTORS
CS < 3pF *
SYMBOL
Collector-Base
V(BR)CBO
Breakdown Voltage
Collector-Emitter
V(BR)CEO
Breakdown Voltage V
(BR)CES
Emitter-Base
V(BR)EBO
Breakdown Voltage
Collector Cut-Off
ICBO
Current
Collector-Emitter
VCE(sat)
Saturation Voltage
Base-Emitter
VBE(sat)
Saturation Voltage
hFE
Static Forward
Current Transfer
Ratio
FMMT2369 FMMT2369A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
40
40
V
IC=10µA, IE=0
15
40
4.5
15
40
4.5
V
V
V
IC=10mA, IB=0*
IC=10µA, VBE=0
IE=10µA, IC=0
400
25
nA
VCB=20V, IE=0
0.25
0.20
V
IC=10mA, IB=1mA*
V
IC=10mA, IB=1mA*
0.7
0.85
0.7
0.85
40
20
120
40
120
20
20
Output Capacitance Cobo
Turn-on Time
ton
4
12
4
12
pF
ns
Turn-off Time
toff
18
18
ns
Storage Time
ts
13
13
ns
IC=10mA, VCE=1V*
IC=10mA, VCE=1V, Tamb=-55°C*
IC=100mA, VCE=1V*
IC=100mA, VCE=2V*
VCB=5V, IE=0, f=140KHz
VCC=3V, VBE(off)=1.5V IC=10mA,
IB1=3mA (See tON circuit)
VCC=3V, IC=10mA, IB1=3mA
IB2=1.5mA(See tOFF circuit)
IC=IB1= IB2=10mA
(See Storage test circuit)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT2369
FMMT2369A
ISSUE 3 – AUGUST 1995
APPLICATIONS
These devices are suitable for use in high speed, low current
switching applications
tON CIRCUIT
t1
+10.6V
3V
3K3Ω
CS < 4pF *
-1.5V
< 1ns
tOFF CIRCUIT
t1
+10.75V
3V
270Ω
B
SOT23
< 1ns
Pulse width (t1)=300ns
Duty cycle = 2%
STORAGE TEST CIRCUIT
t1
10V
980Ω
500Ω
0
< 1ns
Pulse width (t1)=300ns
Duty cycle = 2%
* Total shunt capacitance of test jig and connectors
3-69
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCES
40
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
4.5
V
Continuous Collector Current
IC
200
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
PARAMETER
CS < 4pF *
-4.15V
PARAMETER
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
3K3Ω
-4V
PARTMARKING DETAILS
FMMT2369
- 1J
FMMT2369R
- 9R
FMMTA2369A - P5
FMMTA2369AR - 9A
ABSOLUTE MAXIMUM RATINGS.
Pulse width (t1)=300ns
Duty cycle = 2%
+6V
E
C
270Ω
0
0
FMMT2369
FMMT2369A
SOT23 NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTORS
CS < 3pF *
SYMBOL
Collector-Base
V(BR)CBO
Breakdown Voltage
Collector-Emitter
V(BR)CEO
Breakdown Voltage V
(BR)CES
Emitter-Base
V(BR)EBO
Breakdown Voltage
Collector Cut-Off
ICBO
Current
Collector-Emitter
VCE(sat)
Saturation Voltage
Base-Emitter
VBE(sat)
Saturation Voltage
hFE
Static Forward
Current Transfer
Ratio
FMMT2369 FMMT2369A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
40
40
V
IC=10µA, IE=0
15
40
4.5
15
40
4.5
V
V
V
IC=10mA, IB=0*
IC=10µA, VBE=0
IE=10µA, IC=0
400
25
nA
VCB=20V, IE=0
0.25
0.20
V
IC=10mA, IB=1mA*
V
IC=10mA, IB=1mA*
0.7
0.85
0.7
0.85
40
20
120
40
120
20
20
Output Capacitance Cobo
Turn-on Time
ton
4
12
4
12
pF
ns
Turn-off Time
toff
18
18
ns
Storage Time
ts
13
13
ns
IC=10mA, VCE=1V*
IC=10mA, VCE=1V, Tamb=-55°C*
IC=100mA, VCE=1V*
IC=100mA, VCE=2V*
VCB=5V, IE=0, f=140KHz
VCC=3V, VBE(off)=1.5V IC=10mA,
IB1=3mA (See tON circuit)
VCC=3V, IC=10mA, IB1=3mA
IB2=1.5mA(See tOFF circuit)
IC=IB1= IB2=10mA
(See Storage test circuit)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device