UTRON UT6264C 8K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 FEATURES The UT6264C is a 65,536-bit low power CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. Access time : 35/70ns (max.) Low power consumption : Operating : 45/30 mA (typ.) CMOS Standby : 2mA (typ.) normal 2 µA (typ.) L-version 1 µA (typ.) LL-version Single 4.5V~5.5V power supply Operating temperature : Commercial : 0℃~70℃ All inputs and outputs TTL compatible Fully static operation Three state outputs Data retention voltage : 2V (min.) Package : 28-pin 600 mil PDIP 28-pin 330 mil SOP Easy memory expansion is provided by using two chip enable input.( CE 1 ,CE2) ,and supports low data retention voltage for battery back-up operation with low data retention current. The UT6264C operates from a single 4.5V~5.5V power supply and all inputs and outputs are fully TTL compatible. PIN CONFIGURATION DECODER 28 Vcc 2 27 WE A7 3 26 CE2 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 A2 8 8K × 8 MEMORY ARRAY Vcc Vss I/O1-I/O8 CE1 CE2 OE WE I/O DATA CIRCUIT COLUMN I/O A1 9 A0 10 UT6264C A0-A12 1 A12 NC FUNCTIONAL BLOCK DIAGRAM 22 OE 21 A10 20 CE1 19 I/O8 I/O1 11 18 I/O7 I/O2 12 17 I/O6 I/O3 13 16 I/O5 Vss 14 15 I/O4 PDIP/SOP CONTROL CIRCUIT PIN DESCRIPTION SYMBOL A0 - A12 I/O1 - I/O8 CE1 ,CE2 DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Inputs WE OE VCC VSS NC Write Enable Input Output Enable Input Power Supply Ground No connection GENERAL DESCRIPTION UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 1 P80028 UTRON UT6264C 8K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 ABSOLUTE MAXIMUM RATINGS* PARAMETER Terminal Voltage with Respect to VSS Operating Temperature Commercial Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 sec) SYMBOL VTERM TA TSTG PD IOUT Tsolder RATING -0.5 to +7.0 0 to +70 -65 to +150 1 50 260 UNIT V ℃ ℃ W mA ℃ *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Standby Output Disable Read Write CE1 H X L L L CE2 X L H H H OE X X H L X WE X X H H L I/O OPERATION SUPPLY CURRENT High - Z High - Z High - Z DOUT DIN ISB, ISB1 ISB, ISB1 Icc,Icc1,Icc2 Icc,Icc1,Icc2 Icc,Icc1,Icc2 note: H = VIH, L=VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS (VCC = 4.5V~5.5V, TA = 0℃ to 70℃) PARAMETER Power Voltage Input High Voltage Input Low Voltage Input Leakage Current SYMBOL TEST CONDITION Vcc VIH VIL ILI VSS ≦VIN ≦VCC Output Leakage Current ILO Output High Voltage Output Low Voltage VOH VOL ICC Operating Power Supply Current Icc1 Icc2 Standby Current (TTL) ISB Standby Current (CMOS) ISB1 VSS ≦VI/O≦VCC; CE1 =VIH;or CE2=VIL; or OE = VIH ;or WE = VIL IOH = - 1mA IOL = 4mA - 35 Cycle time=Min,II/O = 0mA; - 70 CE1 = VIL , CE2= VIH Cycle time=1us; II/O = 0mA ; CE1 =0.2V; CE2=Vcc-0.2V; other pins at 0.2V or Vcc-0.2V Cycle time=500ns;II/O = 0mA; CE1 =0.2V; CE2=Vcc-0.2V; other pins at 0.2V or Vcc-0.2V Normal CE1 = VIH or CE2= VIL - L/- LL Normal CE1 ≧VCC-0.2V ; -L or CE2≦ 0.2V; - LL other pins at 0.2V or Vcc-0.2V UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 2 MIN. TYP. MAX. UNIT 4.5 5.0 5.5 V 2.2 VCC+0.5 V - 0.5 0.8 V -1 1 µA -1 - 1 µA 2.4 - 45 30 0.4 60 45 V V mA mA - 20 30 mA - 10 15 mA - 1 0.3 2 2 1 10 3 5 100 50 mA mA mA µA µA P80028 UTRON UT6264C 8K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 CAPACITANCE (TA=25℃, f=1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. MAX 8 10 - UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0V to 3.0V 5ns 1.5V CL = 100pF, IOH/IOL = -1mA/4mA AC ELECTRICAL CHARACTERISTICS (VCC = 4.5V~5.5V, TA = 0℃ to 70℃) (1) READ CYCLE PARAMETER SYMBOL Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change tRC tAA tACE1, tACE2 tOE tCLZ1*, tCLZ2* tOLZ* tCHZ1*, tCHZ2* tOHZ* tOH UT6264C-35 UT6264C-70 MIN. MAX. MIN. MAX. 35 10 5 5 35 35 25 25 25 - 70 10 5 5 70 70 35 35 35 - UNIT ns ns ns ns ns ns ns ns ns (2) WRITE CYCLE PARAMETER SYMBOL Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write-Time Output Active from End of Write Write to Output in High-Z tWC tAW tCW1, tCW2 tAS tWP tWR tDW tDH tOW* tWHZ* UT6264C-35 UT6264C-70 MIN. MAX. MIN. MAX. 35 30 30 0 25 0 20 0 5 - 15 70 60 60 0 50 0 30 0 5 - 25 UNIT ns ns ns ns ns ns ns ns ns ns *These parameters are guaranteed by device characterization, but not production tested. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 3 P80028 UTRON UT6264C 8K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2,4) tRC Address tAA tOH tOH DOUT Data Valid READ CYCLE 2 ( CE1 , CE2 and OE Controlled) (1,3,5,6) t RC Address t AA t ACE1 CE1 CE2 t ACE2 OE t CLZ1 t CLZ2 Dout HIGH-Z t CHZ1 t CHZ2 t OE t OH t OLZ t OHZ HIGH-Z Data Valid Notes : 1. WE is HIGH for a read cycle. 2. Device is continuously selected OE , CE 1 =VIL and CE2=VIH. 3. Address must be valid prior to or coincident with CE 1 4. low and CE2 high transition; otherwise tAA is the limiting parameter. OE is low. 5. tCLZ1, tCLZ2, tOLZ, tCHZ1, tCHZ2 and tOHZ are specified with CL=5pF. Transition is measured ± 500mV from steady state. 6. At any given temperature and voltage condition, tCHZ1 is less than tCLZ1, tCHZ2 is less than tCLZ2, tOHZ is less than tOLZ. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 4 P80028 UTRON UT6264C 8K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 WRITE CYCLE 1 ( WE Controlled) (1,2,3,5,6) t WC Address t AW CE1 t CE2 t t CW1 CW2 AS t WE t Dout t WR WP t WHZ OW High-Z (4) t t DW Din (4) DH Data Valid WRITE CYCLE 2 ( CE 1 and CE2 Controlled) (1,2,5) t WC Address t CE1 t AW t AS t CW1 t WR CW2 CE2 t WE t Dout WP WHZ High-Z t Din t DW DH Data Valid Notes : 1. WE or CE 1 must be HIGH or CE2 must be LOW during all address transitions. 2. A write occurs during the overlap of a low CE 1 , a high CE2 and a low WE . 3. During a WE controlled with write cycle with OE LOW, tWP must be greater than tWHZ+tDW to allow the I/O drivers to turn off and data to be placed on the bus. 4. During this period, I/O pins are in the output state, and input singals must not be applied. 5. If the CE 1 LOW transition occurs simultaneously with or after WE LOW transition, the outputs remain in a high Impedance state. 6. tOW and tWHZ are specified with CL=5pF. Transition is measured ± 500mV from steady state. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 5 P80028 UTRON UT6264C 8K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 DATA RETENTION CHARACTERISTICS (TA = 0℃ to 70℃) PARAMETER Vcc for Data Retention Data Retention Current SYMBOL TEST CONDITION ≧ V -0.2V or CE2 ≤ 0.2V VDR CC CE1 Vcc=2V -L IDR CE1 ≧VCC-0.2V or CE2 ≤ 0.2V -LL Chip Disable to Data Retention Time Recovery Time tCDR See Data RetentionWaveforms (below) tR MIN. 2.0 - TYP. MAX. UNIT 5.5 V 1 50 µA 0.5 20 µA 0 - - ns tRC* - - ns tRC* = Read Cycle Time DATA RETENTION WAVEFORM Low Vcc Data Retention Waveform (1) ( CE 1 controlled) Data Retention Mode VDR ≧ 2V VCC CE1 Vcc Vcc tCDR tR VIH CE1 ≧ V CC-0.2V VIH Low Vcc Data Retention Waveform (2) (CE2 controlled) Data Retention Mode VDR ≧ 2V VCC Vcc Vcc tR tCDR CE2 ≦ 0.2V CE2 VIL VIL UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 6 P80028 UTRON UT6264C 8K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 PACKAGE OUTLINE DIMENSION 28 pin 600 mil PDIP Package Outline Dimension UNIT SYMBOL ` A1 A2 B B1 c D E E1 e eB L S Q1 Θ INCH(BASE) 0.010 (MIN) 0.150± 0.005 0.020 (MAX) 0.055 (MAX) 0.012 (MAX) 1.430 (MAX) 0.625 (MAX) 0.52 (MAX) 0.100 (TYP) 0.6 (TYP) 0.180(MAX) 0.06 (MAX) 0.08(MAX) o 15 (MAX) UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 7 MM(REF) 0.254 (MIN) 3.810± 0.127 0.508(MAX) 1.397(MAX) 0.304 (MAX) 36.322 (MAX) 15.87 (MAX) 13.208 (MAX) 2.540(TYP) 15.24 (TYP) 4.572(MAX) 1.524 (MAX) 2.032(MAX) o 15 (MAX) P80028 UTRON UT6264C 8K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 28 pin 330 mil SOP Package Outline Dimension SYMBOL UNIT A A1 A2 b c D E E1 e L L1 S y θ INCH(REF) MM(BASE) 0.112(max) 0.004(MIN) 0.098±0.005 0.016(TYP) 0.010(TYP) 0.713±0.005 0.331±0.005 0.465±0.012 0.050(TYP) 0.0404±0.008 0.067±0.008 0.047(MAX) 0.003(MAX) 0°~10° 2.845(max) 0.102(MIN) 2.489±0.127 0.406(TYP) 0.254(TYP) 18.110±0.127 8.407±0.127 11.811±0.305 1.270(TYP) 1.0255±0.203 1.702±0.203 1.194(MAX) 0.076(MAX) 0°~10° UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 8 P80028 UTRON UT6264C 8K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 ORDERING INFORMATION PART NO. UT6264CPC-35 UT6264CPC-35L UT6264CPC-35LL UT6264CPC-70 UT6264CPC-70L UT6264CPC-70LL UT6264CSC-35 UT6264CSC-35L UT6264CSC-35LL UT6264CSC-70 UT6264CSC-70L UT6264CSC-70LL ACCESS TIME (ns) 35 35 35 70 70 70 35 35 35 70 70 70 STANDBY CURRENT (µA) (TYP.) 2mA 2µA 1µA 2mA 2µA 1µA 2mA 2µA 1µA 2mA 2µA 1µA UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 9 PACKAGE 28 PIN PDIP 28 PIN PDIP 28 PIN PDIP 28 PIN PDIP 28 PIN PDIP 28 PIN PDIP 28 PIN SOP 28 PIN SOP 28 PIN SOP 28 PIN SOP 28 PIN SOP 28 PIN SOP P80028 UTRON UT6264C 8K X 8 BIT LOW POWER CMOS SRAM Rev. 1.1 REVISION HISTORY REVISION Preliminary Rev. 0.1 Rev. 1.0 Rev. 1.1 DESCRIPTION Original. The timeing waveforms add CE2 control pin. 1. Revised package outline dimension. 2. Revised waveform. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 10 DATE May 3 ,2001 Jun.4,2001 Jan 15,2002 P80028