ETC MMBT6027

MMBT6027
Silicon programmable unijunction transistor (PUT′s)
in package SOT-23
0.5 max
2.55 max
1.4 max
3
1.9
1.2 max
1
3.1 max
2
Pinouts:
1- Anode, 2- Cathode, 3- Gate
Ratings (T A = 25°C)
Symbol
VAK
VGKF
VGKR
VGAR
IT
ITRM
PT
Parameter, units
Limits
± 40
40
-5
40
150
*Anode to cathode voltage, V
*Gate to cathode forward voltage, V
*Gate to cathode reverse voltage, V
*Gate to anode reverse voltage, V
*DC forward anode current, mA
Repetitive peak forward current, A
100µs Pulse width, 1% duty cycle
*20µs Pulse width, 1% duty cycle
*Power dissipation, mW
* - Anode positive, RGA =1000Ω;
Anode negative, RGA=open
1
2
300
Electrical Characteristics (T A = 25°C)
Symbol
IP
IGAO
IGKS
VF
VO
VT
IV
tR
Parameter, units,
test conditions
Peak current, µA,
VS=10V, RG=10kΩ
Gate to anode leakage current, nA,
VS=40V, cathode open
Gate to cathode leakage current, nA,
VS=40V, anode to cathode shorted
Forward voltage, V,
IF=50mA Peak
Peak output voltage, V,
VG=20V, CC=0.2 µF
Offset voltage, V
VS=10V, RG=10kΩ
Valley current, µA,
VS=10V, RG=10kΩ
Pulse voltage rise time, ns
UB=20V, CC =0.2 µF
Planeta
Electronic
company
min
Limits
typ
max
4
5
1
10
5
50
0.8
6
0.2
70
1.5
11
0.35
0.6
150
40
80
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