DSEC 16-12A HiPerFREDTM Epitaxial Diode IFAV = 2x 10 A VRRM = 1200 V trr = 40 ns with common cathode and soft recovery VRSM VRRM V V 1200 1200 TO-220 AB Type DSEC 16-12A A C A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol Test Conditions Maximum Ratings IFRMS IFAVM IFRM TC = 115°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM 14 10 tbd A A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 40 A EAS TVJ = 25°C; non-repetitive IAS = 8 A; L = 180 µH 6.9 mJ VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.8 A -55...+175 175 -55...+150 °C °C °C 60 W Features ● ● ● IAR TVJ TVJM Tstg Ptot TC = 25°C Md mounting torque Weight typical 0.45...0.55 4...5 2 Nm lb.in. g ● ● ● ● Applications ● ● ● Symbol IR ① VF ② Test Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 60 0.25 µA mA IF = 10 A; 1.96 2.94 V V 2.5 0.5 K/W K/W 40 ns TVJ = 150°C TVJ = 25°C RthJC RthCH trr IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs TVJ = 100°C ● ● ● ● ● A ● ● Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● 8.5 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see IXYS Catalog 2000 (CD) IXYS reserves the right to change limits, test conditions and dimensions. © 1999 IXYS All rights reserved 937 Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSEC 16-12A 30 2000 IF 25 nC 20 1500 Qr TVJ= 100°C A VR = 600V IRM IF= 20A IF= 10A IF= 5A TVJ=150°C 15 40 TVJ= 100°C VR = 600V A 30 1000 20 500 10 IF= 20A IF= 10A IF= 5A TVJ=100°C 10 TVJ= 25°C 5 0 0 1 2 3 VF 0 100 4V Fig. 1 Forward current IF versus VF 0 A/µs 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 150 2.0 Kf Qr 90 40 µs tfr VFR 80 0.8 40 0.4 100 0.0 0 tfr IF= 20A IF= 10A IF= 5A 110 0.5 1.2 V 120 IRM 600 A/µs 800 1000 -diF/dt TVJ= 100°C IF = 10A VFR 130 1.0 400 Fig. 3 Peak reverse current IRM versus -diF/dt 140 trr 1.5 200 120 TVJ= 100°C VR = 600V ns 0 80 120 °C 160 0 0 TVJ 200 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 10 K/W 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.558 0.493 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 DSEP 8-12A / DSEC 16-12A 0.0001 0.001 0.01 s 0.1 1 t Fig. 7 Transient thermal resistance junction to case © 1999 IXYS All rights reserved 2-2