DSI 30 VRRM = 800-1600 V IF(AV)M = 30 A Rectifier Diode VRSM V VRRM TO-220 TO-263 DSI 30-08A DSI 30-12A DSI 30-14A DSI 30-16A DSI 30-08AS DSI 30-12AS DSI 30-14AS DSI 30-16AS A C TO-263 AA V A 800 1200 1400 1600 Symbol Conditions IF(AV)M TC IFSM TVJ = 45°C; VR = 0 V; I2t A TO-220 AC Maximum Ratings = 95°C; 180° sine 30 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 300 330 A A TVJ = 150°C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 270 300 A A TVJ = 45°C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 460 A2s A2s TVJ = 150°C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 365 380 A2s A2s -40...+150 150 -40...+150 °C °C °C 0.4...0.6 Nm TVJ TVJM Tstg Md Mounting torque Weight 2 Conditions IR TVJ = TVJM; VR = VRRM £ 1 VF IF C (TAB) A A = Anode, C = Cathode, TAB = Cathode Features ● International standard packages JEDEC TO-263 AA surface mountable ● Planar passivated chips ● Epoxy meets UL 94V-0 flammability classification TO-263 AA Outline Characteristic Values £ 1.45 V VT0 rT For power-loss calculations only TVJ = TVJM 0.85 13 V mW RthJC DC current 1.0 K/W = 45 A; TVJ = 25°C Dim. Millimeter Min. Max. Min. mA Inches Max. Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 0.380 0.420 0.139 0.161 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 6.85 3.42 0.230 0.420 0.100 0.135 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 1.15 - 1.77 6.35 0.045 0.070 0.250 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 J K 0.64 4.83 0.89 5.33 0.025 0.035 0.190 0.210 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L M 3.56 0.38 4.82 0.56 0.140 0.190 0.015 0.022 N Q 2.04 0.64 2.49 1.39 0.080 0.115 0.025 0.055 L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 A B 12.70 14.73 14.23 16.51 0.500 0.580 0.560 0.650 C D 9.66 10.66 3.54 4.08 E F 5.85 2.54 G H Data according to IEC 60747 and refer to a single diode IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved C g Symbol TO-220 Outline C (TAB) 033 900 1300 1500 1700 1-2 DSI 30 50 250 A A 40 200 IFSM 30 150 IF TVJ=150°C TVJ= 25°C 20 103 50Hz, 80% VRRM A2s VR = 0 V 2 It TVJ = 45°C TVJ = 45°C 100 TVJ = 150°C TVJ = 150°C 10 50 0 0.0 0.4 0.8 1.2 V 102 0 0.001 1.6 0.01 0.1 VF 1 s 1 2 3 t Fig. 1 Forward current versus voltage drop per diode 4 5 6 7 ms 8 910 t Fig. 3 I2t versus time per diode Fig. 2 Surge overload current 60 35 A W 30 IF(AV)M RthHA : Ptot 40 25 1 K/W 2 K/W 3 K/W 5 K/W 7 K/W 10 K/W 15 K/W 20 15 20 10 5 0 0 0 10 30 A 20 0 20 40 60 80 100 120 140 °C Id(AV)M 0 Tamb Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180° 20 40 60 80 100 120 140 °C TC Fig. 5 Max. forward current versus case temperature 1.2 K/W 1.0 ZthJC 0.8 Constants for ZthJC calculation: 0.6 0.4 0.2 0.0 0.001 DSI30 0.01 0.1 Fig. 6 Transient thermal impedance junction to case © 2000 IXYS All rights reserved s 1 i Rthi (K/W) ti (s) 1 2 3 4 5 0.01362 0.1962 0.267 0.3052 0.218 0.0001 0.00316 0.023 0.4 0.15 10 t 2-2