DSI 2x55 IF(AV)M = 2x 56 A VRRM = 1200-1600 V Rectifier Diode VRSM VRRM V V 1300 1700 1200 1600 miniBLOC, SOT-227 B E72873 Type DSI 2x55-12A DSI 2x55-16A Symbol Conditions Maximum Ratings (per diode) IFRMS IF(AV)M TC = 80°C; 180° sine IFSM TVJ = 45°C; 120 56 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 650 700 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 570 610 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2210 2060 A 2s A 2s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1620 1560 A 2s A 2s -40...+150 150 -40...+150 °C °C °C 190 W 2500 V~ 1.5/13 1.5/13 Nm/lb.in. Nm/lb.in. 30 g Features International standard package miniBLOC (ISOTOP compatible) Isolation voltage 2500 V~ 2 independent rectifier diodes in one package Planar passivated chips ● ● I 2t TVJ = 45°C TVJ TVJM Tstg Ptot TC = 25°C VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connection torque (M4) Weight Symbol Conditions IR TVJ = 25°C TVJ = 150°C VR = VRRM VF IF = 60 A; TVJ = 125°C TVJ = 25°C VT0 rT For power-loss calculations only TVJ = TVJM ● ● Applications Input rectifier diode Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders ● ● ● ● ● miniBLOC, SOT-227 B Characteristic Values (per diode) typ. max. 0.3 5 mA mA 1.25 1.20 V V 0.8 8 V mW 0.65 K/W K/W M4 screws (4x) supplied Dim. RthJC RthCH Data according to IEC 60747 0.1 Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 008 © 2000 IXYS All rights reserved 1-2 DSI 2x55 80 500 A 70 A IF 60 104 50Hz, 80% VRRM 2 As 400 IFSM TVJ=125°C TVJ= 25°C VR = 0 V I2t TVJ = 45°C 50 TVJ = 45°C 300 103 40 TVJ = 150°C 200 30 20 TVJ = 150°C 100 10 0 0.0 0.4 1.2 V 0.8 102 0 0.001 1.6 0.01 0.1 VF s 1 1 2 3 t Fig. 1 Forward current versus voltage drop per diode 4 5 6 78 ms910 t Fig. 3 I2t versus time per diode Fig. 2 Surge overload current 80 A 70 180 W 160 IF(AV)M RthHA : 140 Ptot 60 0.1 K/W 0.5 K/W 1.0 K/W 2.0 K/W 4.0 K/W 7.0 K/W 120 100 80 50 40 30 60 20 40 10 20 0 0 0 20 40 60 80 100 A 0 IF(AV)M 20 40 60 80 100 120 140 °C 0 Tamb Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180° 20 40 60 80 100 120 140 °C TC Fig. 5 Max. forward current versus case temperature, sine180° 0.8 K/W ZthJC 0.6 Constants for ZthJC calculation: 0.4 i 0.2 0.0 0.001 DSI 2x55 0.01 0.1 Fig. 6 Transient thermal impedance junction to case © 2000 IXYS All rights reserved s 1 1 2 3 4 5 Rthi (K/W) ti (s) 0.031 0.0554 0.114 0.281 0.1686 0.00024 0.0036 0.0235 0.142 0.7 10 t 2-2