IXDR 30N120 D1 VCES IC25 IXDR 30N120 High Voltage IGBT with optional Diode ISOPLUSTM package VCE(sat) typ = 1200 V = 50 A = 2.4 V (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C C G ISOPLUS 247TM E153432 G G C E E Isolated Backside* E IXDR 30N120 IXDR 30N120 D1 G = Gate C = Collector E = Emitter *Patent pending Symbol Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 50 A IC90 TC = 90°C 30 A ICM TC = 90°C, tp = 1 ms 60 A RBSOA VGE = ±15 V, TJ = 125°C, RG = 47 W Clamped inductive load, L = 30 mH ICM = 50 VCEK < VCES A • NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - MOS input, voltage controlled - fast recovery epitaxial diode Epoxy meets UL 94V-0 Isolated and UL registered E153432 tSC (SCSOA) VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 47 W, non repetitive 10 µs Advantages PC TC = 25°C 200 95 W W TJ -55 ... +150 °C Tstg -55 ... +150 °C • • • • • VISOL Maximum Ratings IGBT Diode 50/60 Hz, RMS IISOL £ 1 mA 2500 Weight Conditions V(BR)CES VGE = 0 V VGE(th) IC = 1 mA, VCE = VGE ICES VCE = VCES g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 VCE = 0 V, VGE = ± 20 V VCE(sat) IC = 30 A, VGE = 15 V DCB Isolated mounting tab Meets TO-247AD package Outline Package for clip or spring mounting Space savings High power density Typical Applications • • • • • AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies 6.5 2.5 V 1.5 mA mA ± 500 nA 2.4 2.9 V 031 IGES ● V 4.5 TJ = 25°C TJ = 125°C ● V~ 6 Symbol Features © 2000 IXYS All rights reserved 1-4 IXDR 30N120 D1 IXDR 30N120 Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz C res Qg IC = 30 A, VGE = 15 V, VCE = 0.5 VCES td(on) tr td(off) tf Inductive load, TJ = 125°C IC = 30 A, VGE = ±15 V, VCE = 600 V, RG = 47 W 1650 pF 250 pF 110 pF 120 nC 100 ns 70 ns 500 ns 70 ns Eon 4.6 mJ Eoff 3.4 mJ RthJC RthCH 0.6 K/W Package with heatsink compound Reverse Diode (FRED) Conditions VF IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 90°C IRM IF = 30 A, -diF/dt = 400 A/µs, VR = 600 V t rr VGE = 0 V, TJ = 125°C t rr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V © 2000 IXYS All rights reserved K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol RthJC 0.25 2.5 2.0 2.7 V V 50 27 A A 20 A 200 ns 40 ns ISOPLUS 247 OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R S T U Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 13.21 13.72 15.75 16.26 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1.3 K/W 2-4 IXDR 30N120 D1 IXDR 30N120 60 60 VGE=17V TJ = 25°C A 50 15V 13V IC VGE=17V TJ = 125°C 15V A 50 IC 40 13V 40 11V 11V 30 30 20 20 9V 9V 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 60 IC 3.5 V Fig. 2 Typ. output characteristics 80 VCE = 20V TJ = 125°C A70 TJ = 25°C A 50 2.5 3.0 VCE IF 40 60 TJ = 25°C 50 40 30 30 20 20 10 10 0 0 5 6 7 8 9 10 0 11 V 1 2 Fig. 3 Typ. transfer characteristics V 4 Fig. 4 Typ. forward characteristics of free wheeling diode 300 60 20 V VCE = 600V IC 3 VF VGE = 25A A VGE 15 ns IRM trr trr 200 40 10 20 TJ = 125°C VR = 600V IF = 30A IRM 5 IXDH/..R30N120 0 0 0 20 40 60 80 100 120 140 nC QG Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved 100 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 IXDR 30N120 D1 IXDR 30N120 14 140 6 12 mJ ns 120 mJ 5 Eon 10 100 8 VCE = 600V VGE = ±15V tr RG = 47W TJ = 125°C 4 Eon 2 0 0 Eoff Eoff td(off) 400 t 4 10 20 30 20 1 0 0 mJ 10 Eon 8 200 100 tf 0 0 10 20 30 40 50 A IC Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current 5 240 VCE = 600V VGE = ±15V IC = 25A TJ = 125°C 300 RG = 47W TJ = 125°C 2 40 50 A 40 VCE = 600V VGE = ±15V 3 60 IC 12 ns 500 80 td(on) 6 t 600 td(on) ns Eon 180 tr t 6 1500 VCE = 600V VGE = ±15V IC = 25A TJ = 125°C mJ 4 Eoff ns td(off) 1200 Eoff t 3 900 2 600 1 300 120 4 60 2 0 0 40 80 120 160 RG 200 W 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM 10 A 50 K/W 1 RG = 47W TJ = 125°C VCEK < VCES 30 40 80 120 160 RG 200 0 W 240 Fig.10 Typ. turn off energy and switching times versus gate resistor 60 40 tf 0 0 240 diode IGBT ZthJC 0.1 0.01 20 0.001 10 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved single pulse 0.0001 0.00001 0.0001 IXDR30N120 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 4-4