Advance Technical Information IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 22 mΩ RDS(on) N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 ID(RMS) IDM IAR TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C 120 75 480 90 A A A A EAR EAS TC = 25°C TC = 25°C 64 3.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC 560 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C = 25°C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.7/6 Nm/lb.in. 10 g TO-264 AA (IXTK) D (TAB) G D S G = Gate S = Source D = Drain Tab = Drain Features • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • International standard package • Fast switching times Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS V GS = 0 V, ID = 1 mA VGS(th) V DS = VGS, ID = 250 µA IGSS V GS = ±20 V DC, VDS = 0 IDSS V DS = VDSS V GS = 0 V RDS(on) V GS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% © 2002 IXYS All rights reserved 250 2.0 TJ = 25°C TJ = 125°C V • • • Motor controls DC choppers Switched-mode power supplies Advantages 4.0 V ±200 nA • 50 µA 3 mA • • Easy to mount with one screw (isolated mounting screw hole) Space savings High power density 22 mΩ 98879A (02/02) IXTK 120N25 Symbol Test Conditions (T J = 25°C unless otherwise specified) gfs Characteristic values Min. Typ. Max. V DS = 10 V; ID = 0.5 ID25, pulse test Ciss 85 S 9400 pF 1730 pF Crss 550 pF td(on) 35 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 65 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1.5 Ω (External) 38 ns 175 ns 35 ns tf 400 Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd nC 70 nC 155 nC 0.22 K/W RthJC 0.15 RthCK Source-Drain Diode K/W TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Ratings and Characteristics (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 120 A ISM Repetitive; pulse width limited by TJM 480 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 30A, -di/dt = 100 A/µs, VR = 100V 350 ns 6 µC Qrr IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1