MDD 26 IFRMS = 2x 60 A IFAVM = 2x 36 A VRRM = 800-1800 V Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 3 Type MDD 26-08N1 B MDD 26-12N1 B MDD 26-14N1 B MDD 26-16N1 B MDD 26-18N1 B IFSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 Maximum Ratings 60 A 36 A Md 50/60 Hz, RMS IISOL £ 1 mA t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine t = 1 min t=1s Weight Mounting torque (M5) Terminal connection torque (M5) Typical including screws Symbol IR Test Conditions TVJ = TVJM; VR = VRRM VF IF = 80 A; TVJ = 25°C VT0 rT 650 760 580 630 A A A A 2100 2400 1700 1900 2 As A2s A2s A2s -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ 2.5-4/22-35 Nm/lb.in. 2.5-4/22-35 Nm/lb.in. 90 g Characteristic Values 10 mA 1.38 V For power-loss calculations only TVJ = TVJM 0.8 6.1 V mW QS IRM TVJ = 125°C; IF = 25 A, -di/dt = 0.6 A/ms 50 6 mC A RthJC per diode; DC current per module per diode; DC current per module 1.0 0.5 1.2 0.6 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 RthJK dS dA a Features International standard package JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 ● ● t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms TVJ TVJM Tstg VISOL 3 TO-240 AA 1 Test Conditions TVJ = TVJM TC = 100°C; 180° sine òi dt 2 2 Symbol IFRMS IFAVM 2 1 other values see Fig. 6/7 Creepage distance on surface Strike distance through air Maximum allowable acceleration ● ● ● Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies ● ● ● ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● ● ● Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-3 MDD 26 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 òi2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load © 2000 IXYS All rights reserved 2-3 MDD 26 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180° 120° 60° 30° RthJC (K/W) 1.00 1.02 1.04 1.07 1.10 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) ti (s) 0.01 0.03 0.96 0.0012 0.095 0.455 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180° 120° 60° 30° RthJK (K/W) 1.20 1.22 1.24 1.27 1.30 Constants for ZthJK calculation: i 1 2 3 4 © 2000 IXYS All rights reserved Rthi (K/W) ti (s) 0.01 0.03 0.96 0.2 0.0012 0.095 0.455 0.495 3-3