SDD320 Diode-Diode Modules 2 3 Dimensions in mm (1mm=0.0394") Type 1 SDD320N08 SDD320N12 SDD320N14 SDD320N16 SDD320N18 Symbol IFRMS IFAVM VRSM V 900 1300 1500 1700 1900 Test Conditions TVJ=TVJM TC=100oC; 180o sine VRRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 480 320 A IFSM TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 11500 12200 9600 10200 A i2dt TVJ=45oC VR=0 TVJ=TVJM VR=0 t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 662000 620000 460000 430000 A2s -40...+150 150 -40...+125 TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA t=1min t=1s Mounting torque (M5) Terminal connection torque (M8) Typical including screws o C 3000 3600 V~ 2.5-5/22-24 12-15/106-132 Nm/lb.in. 320 g SDD320 Diode-Diode Modules Symbol IRRM Test Conditions TVJ=TVJM; VR=VRRM o Characteristic Values Unit 40 mA VF IF=600A; TVJ=25 C 1.2 V VTO For power-loss calculations only 0.75 V TVJ=TVJM 0.63 m o 760 uC 275 A rT QS TVJ=125 C; IF=400A; -di/dt=50A/us IRM RthJC per diode; DC current per module 0.129 0.065 K/W RthJK per diode; DC current per module 0.169 0.0845 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 FEATURES APPLICATIONS ADVANTAGES * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits SDD320 Diode-Diode Modules Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load 2 x SDD320 SDD320 Diode-Diode Modules Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 3 x SDD320 0.15 Fig. 6 Transient thermal impedance junction to case (per diode) 30° DC K/W RthJC for various conduction angles d: ZthJC d 0.10 DC 180oC 120oC 60oC 30oC 0.05 RthJC (K/W) 0.129 0.131 0.132 0.132 0.133 Constants for ZthJC calculation: i 0.000 10-3 10-2 10-1 100 101 102 s t 0.20 30° DC ti (s) 0.0035 0.0165 0.1091 0.0099 0.168 0.456 RthJK for various conduction angles d: 0.15 d DC 180oC 120oC 60oC 30oC 0.10 RthJK (K/W) 0.169 0.171 0.172 0.172 0.173 Constants for ZthJK calculation: 0.05 i 0 0.00 10-3 Rthi (K/W) Fig. 7 Transient thermal impedance junction to heatsink (per diode) K/W ZthJK 1 2 3 10-2 10-1 100 101 s t 102 1 2 3 4 Rthi (K/W) ti (s) 0.0035 0.0165 0.1091 0.04 0.0099 0.168 0.456 1.36