SEMICONDUCTOR KRX105U TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・Including two devices in USV. 1 5 A 2 C ・With Built-in bias resistors. A1 C (Ultra Super mini type with 5 leads.) 3 ・Simplify circuit design. D 4 DIM A A1 B B1 C ・Reduce a quantity of parts and manufacturing process. H D G EQUIVALENT CIRCUIT Q1 B C R1 Q2 B T 0.65 H 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + T 0.15+0.1/-0.05 G C R1 E MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + R1=4.7KΩ (Q1 , Q 2 COMMON) 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 1 Q2 COMMON (EMITTER) IN (BASE) COMMON (EMITTER) OUT (COLLECTOR) OUT (COLLECTOR) IN (BASE) E USV EQUIVALENT CIRCUIT (TOP VIEW) 5 Marking 4 Type Name 5 Q2 BE Q1 Q1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC 1 2 4 3 1 2 3 SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V IC 100 ㎃ SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V IC -100 ㎃ SYMBOL RATING UNIT PC * 200 ㎽ Tj 150 ℃ Tstg -55～150 ℃ Collector Current Q2 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector Current Q1, Q2 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. 2002. 5. 8 Revision No : 2 1/3 KRX105U Q1 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 ㎁ Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 ㎁ DC Current Gain hFE VCE=5V, IC=1㎃ 120 - - VCE(sat) IC=10㎃, IB=0.5㎃ - 0.1 0.3 V Transition Frequency fT * VCE=10V, IC=5㎃ - 250 - ㎒ Input Resistor RI - 4.7 - ㏀ MIN. TYP. MAX. UNIT. Collector-Emitter Saturation Voltage Note : * Characteristic of Transistor Only. Q2 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -100 ㎁ Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 ㎁ DC Current Gain hFE VCE=-5V, IC=-1㎃ 120 - - VCE(sat) IC=-10㎃, IB=-0.5㎃ - -0.1 -0.3 V Transition Frequency fT * VCE=-10V, IC=-5㎃ - 250 - ㎒ Input Resistor RI - 4.7 - ㏀ Collector-Emitter Saturation Voltage Note : * Characteristic of Transistor Only. 2002. 5. 8 Revision No :2 2/3 KRX105U h FE - I C Q1 COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k V CE(sat) - I C 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =5V 10 0.1 0.3 1 3 10 30 100 2 Q2 IC /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 1k Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 COLLECTOR CURRENT I C (mA) 2002. 5. 8 10 30 100 -30 -100 V CE(sat) - I C Q2 500 300 3 COLLECTOR CURRENT I C (mA) h FE - I C 2k 1 Revision No :2 -100 -2 Q2 -1 IC /I B =20 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C -0.3 -1 -3 -10 COLLECTOR CURRENT I C (mA) 3/3