SEMICONDUCTOR KRX214U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ᴌIncluding two devices in US6. 1 6 2 5 3 4 DIM A A1 B A C ᴌWith Built-in bias resistors. A1 C (Ultra Super mini type with 6 leads.) ᴌSimplify circuit design. D ᴌReduce a quantity of parts and manufacturing process. D G H EQUIVALENT CIRCUIT Q1 Q2 C IN B R1 Q2 R1=47KΩ R2=47KΩ 0.15+0.1/-0.05 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 (EMITTER) (BASE) OUT (COLLECTOR) COMMON (EMITTER) IN (BASE) (COLLECTOR) Type Name 4 Q1 1 3 4 5 BI Q2 2 T US6 Marking 6 1 H COMMON EQUIVALENT CIRCUIT (TOP VIEW) 5 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + G R2 6 T OUT E B1 C MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + 2 3 Q1 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 6 V IC 500 Ὠ 1 a RATING UNIT Collector Current ICP * * Single pulse Pw=1mS. Q2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Output Voltage VO 50 V Input Voltage VI 40, -10 V Output Current IO -100 Ὠ SYMBOL RATING UNIT PD * 200 Ὥ Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Q1, Q2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. 2002. 2. 18 Revision No : 0 1/4 KRX214U Q1 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL ICBO Collector Cut-off Current TEST CONDITION MIN. TYP. MAX. UNIT - - 100 nA VCB=15V, IE=0 Collector-Base Breakdown Voltage V(BR)CBO IE=10Ọ A 15 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA 12 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10Ọ A 6 - - V 270 - 680 - IC=200mA, IB=10mA - 90 250 mV VCE=2V, IC=10mA, fT=100MHz - 320 - MHz VCB=10V, IE=0, f=1MHz - 7.5 - pF MIN. TYP. MAX. UNIT. - - 500 ὦ hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage fT Transition Frequency Cob Collector Output Capacitance VCE=2V, IC=10mA Q2 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL IO(OFF) Output Cut-off Current TEST CONDITION VO=50V, VI=0 GI VO=5V, IO=10Ὠ 20 - - Output Voltage VO(ON) IO=10Ὠ, II=0.5Ὠ - 0.1 0.3 V Input Voltage (ON) VI(ON) VO=0.2V, IO=5Ὠ - 2.8 5.0 V Input Voltage (OFF) VI(OFF) VO=5V, IO=0.1Ὠ 1.0 1.2 - V Transition Frequency fT * VO=10V, IO=5Ὠ - 200 - ὲ VI=5V - - 0.18 Ὠ DC Current Gain II Input Current Note : * Characteristic of Transistor Only. 2002. 2. 18 Revision No : 0 2/4 KRX214U Q 1 (NPN TRANSISTOR) h FE - I C DC CURRENT GAIN h FE 1K 500 Ta=125 C Ta=25 C 300 Ta=-40 C 100 50 30 VCE =2V 10 1 3 10 30 100 300 1K COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) VCE(sat) - I C 1K I C /IB =20 500 300 100 50 30 C 125 Ta= C C 25 0 Ta= Ta=-4 10 5 3 1 1 COLLECTOR CURRENT I C (mA) 3 Ta=25 C 100 50 30 I C /IB =50 I C /I B =20 10 I C/I B = 10 5 3 1 10K 3K Ta=-40 C 1K Ta=25 C 5 C Ta=12 500 300 100 1 3 10 30 100 300 1K 1 3 10 0 C Ta=4 Ta=2 Ta=1 25 C 10 5 C 100 50 30 5 3 0 0.5 100 300 1K fT - IC VCE =2V 500 300 30 COLLECTOR CURRENT I C (mA) 1.0 BASE-EMITTER VOLTAGE VBE (V) Revision No : 0 1.5 TRANSITION FREQUENCY f T (MHz) 1K COLLECTOR CURRENT I C (mA) 1K I C /IB =20 I C - V BE 2002. 2. 18 300 5K COLLECTOR CURRENT I C (mA) 1 100 VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 30 COLLECTOR CURRENT I C (mA) VCE(sat) - I C 500 300 10 1K VCE =2V Ta=25 C 500 300 100 50 30 10 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) 3/4 KRX214U Q 1 (NPN TRANSISTOR) 1K I E =0A f=1MHz Ta=25 C 500 300 100 50 30 C ib 10 C ob 5 3 1 0.1 0.3 1 3 10 30 100 COLLECTOR LPOWER DISSIPATION P C (mW) COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF) C ob - VCB , C ib - VEB Pc - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 10k 0.5 0.3 0.1 0.3 1 3 10 30 100 DC CURRENT GAIN G I C =25 C C Ta 100 50 30 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INPUT OFF VOLTAGE V I(OFF) (V) INPUT ON VOLTAGE V I(ON) (V) 500 =2 5 =1 1 1k 500 300 Ta Ta=25 C Ta=-25 C 00 5 3 VO =5V =1 00 C 10 5k 3k I O - V I(OFF) Q2 Ta 50 30 OUTPUT CURRENT I O (µA) VO =0.2V Ta OUTPUT CURRENT I O (mA) 100 I O - V I(ON) Q2 GI - IO Q2 VO =5V 300 Ta=100 C 100 Ta=25 C Ta=-25 C 50 30 10 1 3 10 30 100 OUTPUT CURRENT I O (mA) 2002. 2. 18 Revision No : 0 4/4