SEMICONDUCTOR KRC281M~KRC286M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. B FEATURES A High emitter-base voltage : VEBO=25V(Min) O F High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) H M G With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C E E B 2 3 N K 1 C D J EQUIVALENT CIRCUIT DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX _ 0.15 D 2.40 + E 1.27 F 2.30 _ 0.50 G 14.00 + H 0.60 MAX J 1.05 K 1.45 L 25 0.80 M N 0.55 MAX O 0.75 L R1 1. EMITTER 2. COLLECTOR 3. BASE TO-92M E MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 25 V Collector Current IC 300 mA Collector Power Dissipation PC 400 W Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range 2002. 12. 5 Revision No : 1 1/2 KRC281M~KRC286M ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage BVCEO IC=1mA 20 - - V Collector-Base Breakdown Voltage BVCBO IC=50 A 50 - - V Emitter-Base Breakdown Voltage BVEBO IE=50 A 25 - - V VCB=50V, IE=0 - - 0.1 A VCE(sat) IC=30mA, IB=3mA - - 0.1 V hFE VCE=2V, IC=4mA 350 - 1200 KRC281M - 2.2 - KRC282M - 4.7 - - 5.6 - - 6.8 - KRC285M - 10 - KRC286M - 22 - ICBO Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC283M Input Resistor KRC284M R1 k Transition Frequency fT * VCE=6V, IC=4mA, - 30 - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.8 - pF * Characteristic of Transistor Only. Note) hFE Classification 2002. 12. 5 B:350 1200 Revision No : 1 2/2