SRA2210U Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. Marking Package Code SRA2210U AR SOT-323 Outline Dimensions unit : mm • Equivalent Circuit 2.1±0.1 C(OUT) 1.25±0.05 3 0.15±0.05 B(IN) 0.30±0.1 2 R1 Ω R1 = 4.7KΩ E(COMMON) 0~0.1 1.30±0.1 0.90±0.1 2.0±0.2 1 0.1 Min. KSR-3027-000 1 SRA2210U (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ 150 °C (Ta=25°°C) Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -500 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -500 nA DC Current Gain hFE VCE=-5V, IC=-1mA 120 - - - IC=-10mA, IB=-0.5mA - -0.1 -0.3 V VCE=-10V, IC=-5mA - 250 - MHz - 4.7 - KΩ Collector-Emitter Saturation Voltage VCE(SAT) * Transition Frequency fT Input Resistance R1 - * : Characteristic of Transistor Only Electrical Characteristic Curves Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC KSR-3027-000 2