LRC MC74VHC1G14DFT2

LESHAN RADIO COMPANY, LTD.
Schmitt-Trigger Inverter
MC74VHC1G14
The MC74VHC1G14 is a single gate CMOS Schmitt–trigger inverter fabricated with silicon gate CMOS technology. It achieves high
speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The
MC74VHC1G14 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the
MC74VHC1G14 to be used to interface 5 V circuits to 3 V circuits.
The MC74VHC1G14 can be used to enhance noise immunity or to square up slowly changing waveforms.
• High Speed: t PD = 4.0 ns (Typ) at V CC = 5 V
• Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 101; Equivalent Gates = 25
MARKING DIAGRAMS
5
4
1
2
VAd
3
SC–70/SC–88A/SOT–353
DF SUFFIX
CASE 419A
Pin 1
d = Date Code
5
Figure 1. Pinout (Top View)
4
VAd
1
2
3
SOT–23/TSOP–5/SC–59
DT SUFFIX
CASE 483
Figure 2. Logic Symbol
Pin 1
d = Date Code
FUNCTION TABLE
PIN ASSIGNMENT
1
2
3
4
5
NC
IN A
GND
OUT Y
V CC
Inputs
A
L
H
Output
Y
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.
VH14–1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G14
MAXIMUM RATINGS
Symbol
V CC
V IN
V OUT
Parameter
Value
Unit
– 0.5 to + 7.0
V
– 0.5 to +7.0
V
V CC=0
– 0.5 to +7.0
V
High or Low State
–0.5 to V cc + 0.5
I IK
Input Diode Current
–20
mA
I OK
Output Diode Current
V OUT < GND; V OUT > V CC
+20
mA
I OUT
DC Output Current, per Pin
+ 25
mA
I CC
DC Supply Current, V CC and GND
+50
mA
PD
Power dissipation in still air
SC–88A, TSOP–5
200
mW
θ JA
Thermal resistance
SC–88A, TSOP–5
333
°C/W
TL
Lead Temperature, 1 mm from Case for 10 s
260
°C
TJ
Junction Temperature Under Bias
+ 150
°C
T stg
Storage temperature
–65 to +150
°C
V ESD
ESD Withstand Voltage
Human Body Model (Note 2)
>2000
V
Machine Model (Note 3)
> 200
Charged Device Model (Note 4)
N/A
I LATCH–UP
Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
DC Supply Voltage
DC Input Voltage
DC Output Voltage
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V CC
DC Supply Voltage
V IN
DC Input Voltage
V OUT
DC Output Voltage
TA
Operating Temperature Range
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
Time,
Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time,
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
Min
2.0
0.0
0.0
– 55
Max
5.5
5.5
V CC
+ 125
Unit
V
V
V
°C
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
VH14–2/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G14
DC ELECTRICAL CHARACTERISTICS
V CC
(V)
T A = 25°C
T A < 85°C –55°C<TA<125°C
Min Typ Max Min Max Min Max Unit
Positive Threshold
Voltage
3.0
4.5
1.85
2.86
2.0
3.0
2.20
3.15
2.20
3.15
2.20
3.15
3.50
0.9
3.6
1.5
3.85
1.65
3.85
3.85
Negative Threshold
5.5
3.0
0.9
0.9
Voltage
4.5
5.5
1.35
1.65
2.3
2.9
2.46
3.05
1.35
1.65
1.35
1.65
VH
Hysteresis Voltage
3.0
4.5
0.30 0.57
0.40 0.67
1.20
1.40
0.30 1.20 0.30
0.40 1.40 0.40
1.20
1.40
V IN < V T – Min
0.50 0.74
1.9 2.0
0.50 1.60 0.50
1.9
1.9
1.60
Minimum High–Level
5.5
2.0
1.60
V OH
Output Voltage
I OH = –50 µA
3.0
4.5
2.9
4.4
I OH = –4 mA
I OH = –8 mA
3.0
4.5
2.58
3.94
Symbol
V T+
V T–
V OL
Parameter
Test Conditions
Maximum Low–Level
Output Voltage
3.0
4.5
2.9
4.4
2.9
4.4
2.48
3.80
2.34
3.66
V
V
V
V IN > V T + MinL
I OL = 50 µA
2.0
3.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
4.5
3.0
0.0
I OL = 4 mA
0.1
0.36
0.1
0.44
0.1
0.52
0.36
±0.1
0.44
±1.0
0.52
±1.0
µA
2.0
20
40
µA
I IN
Maximum Input
4.5
I OL = 8 mA
V IN = 5.5 V or GND 0 to5.5
I CC
Leakage Current
Maximum Quiescent
V IN = V CC or GND
5.5
V
Supply Current
AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns
T A = 25°C
Symbol Parameter
t PLH , Maximum
t PHL
C IN
C PD
Propagation Delay,
Input A to Y
Test Conditions
V CC = 3.3± 0.3 V C L = 15 pF
Typ
7.0
Max
12.8
Min
1.0
Max Min
15.0 1.0
Max Unit
17.0 ns
C L = 50 pF
8.5
16.3
1.0
18.5
1.0
20.5
V CC = 5.0± 0.5 V C L = 15 pF
C L = 50 pF
4.0
5.5
8.6
10.6
1.0
1.0
10.0
12.0
1.0
1.0
11.5
13.5
5
10
Maximum Input
Capacitance
Power Dissipation Capacitance (Note 6)
Min
T A < 85°C –55°C<TA<125°C
10
Typical @ 25°C, V CC = 5.0 V
7.0
10
pF
pF
6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without
load. Average operating current can be obtained by the equation: I CC(OPR) = C PD • V CC • f in + I CC . C PD is used to determine the no–
load dynamic power consumption; P D = C PD • V CC 2 • f in + I CC • V CC .
VH14–3/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G14
*Includes all probe and jig capacitance
Figure 4. Switching Waveforms
Figure 5. Test Circuit
DEVICE ORDERING INFORMATION
Device Nomenclature
Device
Temp
Order Number Circuit
Device
Range
Technology
Indicator
Function
Identifier
Package
Suffix
Tape &
Reel
Suffix
MC74VHC1G02DFT1
MC
74
VHC1G
14
DF
T1
MC74VHC1G02DFT2
MC
74
VHC1G
14
DF
T2
MC74VHC1G02DTT1
MC
74
VHC1G
14
DT
T1
Package Type
(Name/SOT#/
Common Name)
Tape and
Reel Size
SC–70/SC–88A/
SOT–353
SC–70/SC–88A/
SOT–353
SOT–23/TSOPS/
SC–59
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
178 mm (7 in)
3000 Unit
VH14–4/4