DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION +0.2 +0.1 0.6 −0.05 NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gains 5° 5° PART NUMBER QUANTITY 2SC4093-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. 2SC4093-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. +0.1 5° PACKING STYLE 0 to 0.1 ORDERING INFORMATION 0.16 −0.06 1.1−0.1 0.8 +0.2 S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHz 0.4 1 • Low Noise 4 FEATURES (1.9) 2.9±0.2 (1.8) 0.85 0.95 2 gain. +0.1 +0.1 contatined in a 4 pins mini-mold package which enables high-isolation 0.4 −0.05 2.8 −0.3 +0.2 1.5 −0.1 0.4 −0.05 It has large dynamic range and good current characteritics, and is 3 noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS (Units: mm) +0.1 −0.05 The 2SC4093 is an NPN silicon epitaxial transistor designed for low 5° PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 Storage Temperature Tstg C C Document No. P10365EJ3V1DS00 (3rd edition) Date Published March 1997 N Printed in Japan 20 65 to +150 V © 1991 2SC4093 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1.0 A VCB = 10 V, IE = 0 Emitter Cutoff Current IEBO 1.0 A VEB = 10 V, IC = 0 DC Current Gain hFE 50 120 Gain Bandwidth Product fT 7.0 Feed-Back Capacitance Cre 0.6 Insertion Power Gain S21e2 Noise Figure 11 NF 250 GHz 0.95 13 1.1 VCE = 10 V, IC = 20 mA 2.0 VCE = 10 V, IC = 20 mA pF VCB = 10 V, IE = 0, f = 1.0 MHz dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz Classification of hFE Rank R26/RBF * R27/RBG * R28/RBH * Marking R26 R27 R28 Range 50 to 100 80 to 160 125 to 250 hEF Test Condtitions: VCE = 10 V, IC = 20 mA 2 * Old Specification / New Specification 2SC4093 TYPICAL CHARACTERISTICS (TA = 25 C) FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Free Air 200 100 0 50 100 f = 1.0 GHz 2 Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 1 0.5 0.2 0.1 1 2 DC CURRENT GAIN vs. COLLECTOR CURRENT 20 VCE = 10 V VCE = 10 V f = 1.0 GHz |S21e|2-Insertion Gain-dB hFE-DC Current Gain 50 20 1 5 10 10 0 0.5 50 1 2 IC-Collector Current-mA 5 10 20 50 IC-Collector Current-mA GAIN BANDWIDTH PRODUUT vs. COLLECTOR CURRENT INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY 30 20 VCE = 10 V IC = 20 mA VCE = 10 V 10 Gmax-Maximum Gain-dB |S21e|2-Insetion Gain -dB fT-Gain Bandwidth Product-MHz 20 INSERTION GAIN vs. COLLECTOR CURRENT 100 10 0.5 10 VCB-Collector to Base Voltage-V TA-Ambient Temperature-°C 200 5 5 2 Gmax 20 |S21e|2 10 1 0.6 1 2 5 10 IC-Collector Current-mA 20 40 0 0.1 0.2 0.5 1.0 2.0 f-Frequency-GHz 3 2SC4093 NOISE FIGURE vs. COLLECTOR CURRENT 7 VCE = 10 V f = 1.0 GHz NF-Noise Figure-dB 6 5 4 3 2 1 0 0.5 1 5 10 50 70 IC-Collector Current-mA S-PARAMETER VCE =10 V, IC = 5 mA, ZO = 50 f (MHz) S11 200 0.730 400 0.583 600 0.522 800 S11 76.5 S21 S21 S12 S12 S22 11.712 129.6 0.048 47.2 0.772 7.379 105.6 0.056 43.2 0.600 5.551 92.2 0.072 38.6 0.526 0.518 118.8 146.2 166.5 4.026 80.8 0.072 40.5 0.471 1000 0.519 178.3 3.406 71.9 0.088 40.5 0.441 1200 0.539 166.6 2.744 63.1 0.089 44.3 0.428 1400 0.552 157.4 2.512 55.2 0.106 45.6 0.406 1600 0.555 149.0 2.122 48.5 0.111 44.8 0.388 1800 0.570 140.9 2.028 41.9 0.134 49.3 0.380 2000 0.582 134.0 1.740 36.4 0.135 47.3 0.367 S22 28.1 34.9 37.7 39.8 41.6 45.4 49.4 56.1 61.8 68.0 VCE = 10 V, IC = 20 mA, ZO = 50 S11 S11 S21 S21 S12 S12 S22 200 0.454 111.0 0.033 46.1 0.497 0.395 10.412 93.3 0.041 58.1 0.359 600 0.384 114.9 153.0 172.8 19.635 400 7.454 84.4 0.060 55.6 0.315 800 0.408 173.4 5.318 75.5 0.073 61.1 0.283 1000 0.420 162.6 4.450 68.8 0.094 58.2 0.256 1200 0.442 154.7 3.571 61.4 0.103 58.7 0.247 1400 0.455 147.7 3.253 54.6 0.127 55.3 0.227 1600 0.468 141.2 2.737 49.0 0.137 53.1 0.212 1800 0.486 133.9 2.618 43.0 0.165 52.1 0.198 2000 0.502 128.7 2.237 38.4 0.170 48.4 0.186 f (MHz) 4 S22 42.5 41.2 41.0 42.5 43.2 47.8 53.0 62.2 67.4 75.5 2SC4093 S-PARAMETER S11e, S22e-FREQUENCY VCE = 10 V freq. = 0.2 to 2 GHz (Step 200 MHz) 1 0.6 2 0.2 2.0 GHz 5 1 0 0.6 0.2 S11e 2.0 GHz IC = 20 mA S22e IC = 5 mA −0.2 IC = 20 mA −5 0.2 GHz 0.2 GHz IC = 5 mA −2 −0.6 −1 S12e-FREQUENCY VCE = 10 V freq. = 0.2 to 2 GHz (Step 200 MHz) S21e-FREQUENCY VCE = 10 V freq. = 0.2 to 2 GHz (Step 200 MHz) 90 90 120 120 60 60 S12e IC = 20 mA 150 IC = 5 mA 150 30 S21e 2.0 GHz IC = 20 mA 0.2 GHz IC = 5 mA 0.2 GHz 2.0 GHz 2.0 GHz 180 30 0 4 8 12 16 20 0 180 0 0.04 0.08 0.12 0.16 0.2 S21 S21 −150 −30 −60 −120 −90 −150 −30 −60 −120 −90 5 0 2SC4093 [MEMO] 6 2SC4093 [MEMO] 7 2SC4093 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5