DATA SHEET SILICON POWER TRANSISTOR 2SC4346,4346-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING ORDERING INFORMATION DESCRIPTION The 2SC4346 is a mold power transistor developed for PART NUMBER PACKAGE 2SC4346 TO-251 (MP-3) 2SC4346-Z TO-252 (MP-3Z) high-speed switching, high voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES • Small package, but can control for high-current • Low collector saturation voltage VCE(sat) = 1.0 V MAX. (IC = 2.0 A) • Ultra high-speed switching tf = 0.3 µs MAX. (IC = 2.0 A) • Base reverse bias safe operating area is wide VCEX(SUS)1 = 450 V MIN. (IC = 2.0 A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 500 V Collector to Emitter Voltage VCEO 400 V Emitter to Base Voltage VEBO 8.0 V Collector Current (DC) IC(DC) 5.0 A 10 A 2.5 A Collector Current (pulse) Base current (DC) Total Power Dissipation Total Power Dissipation IC(pulse) Note1 IB(DC) PT1 (TC = 25°C) PT2 (TA = 25°C) 18 1.0 Note2 , 2.0 W Note3 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. Mounted on print board 2 3. Mounted on ceramic substrate of 7.5 mm x 0.7 mm The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17082EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2004 2SC4346,4346-Z ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Collector to Emitter Voltage SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VCEO(SUS) IC = 2.0 A, IB1 = 0.4 A, L = 1 mH 400 V VCEX(SUS)1 IC = 2.0 A, IB1 = −IB2 = 0.4 A, 450 V 400 V L = 180 µH, Clamped IC = 4.0 A, IB1 = 1.0 A, −IB2 = 0.4 A, VCEX(SUS)2 L = 180 µH, Clamped Collector Cut-off Current Emitter Cut-off Current DC Current Gain Note Collector Saturation Voltage Note ICBO VCB = 400 V, IE = 0 10 µA ICER VCB = 400 V, RBE = 51 Ω, TA = 125°C 1.0 mA ICEX1 VCB = 400 V, VBE(OFF) = −5 V 100 µA ICEX2 VCB = 400 V, VBE(OFF) = −5 V, TA = 125°C 1.0 mA IEBO VEB = 5.0 V, IC = 0 10 µA hFE1 VCE = 5.0 V, IC = 5 mA 15 hFE2 VCE = 5.0 V, IC = 0.5 A 20 hFE3 VCE = 5.0 V, IC = 2.0 A 10 80 VCE(sat) IC = 2.0 A, IB = 0.4 A 0.5 1.0 V VBE(sat) IC = 2.0 A, IB = 0.4 A 1.0 1.5 V Turn-on Time ton IC = 2.0 A, RL = 75 Ω 0.7 µs Storage Time tstg IB1 = −IB2 = 0.4 A, VCC 2.5 µs 0.3 µs Base Saturation Voltage Note Fall Time tf 150 V See Test Circuit Note Pulsed hFE CLASSIFICATION Marking M L K hFE2 20 to 40 30 to 60 40 to 80 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT RL = 75 Ω IC VIN Base current waveform IB1 T.U.T. IB1 IB2 VCC = 150 V IB2 90 % Collector current waveform PW IC 10 % PW = 50 µ s Duty Cycle ≤ 2 % 2 −VBB = −5 V ton Data Sheet D17082EJ2V0DS tstg tf 2SC4346,4346-Z TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE FORWARD BIAS SAFE OPERATING AREA (Note) 2SC4346-Z Mounted on ceramic 2 subsutrate of 7.5 mm x 0.7 mm 10 With infinite heatsink (TC = 25˚C) 8 6 Mounted on print board 4 PW = 1 µs IC(DC) IC - Collector Current - A PT - Total Power Dissipation - W 12 10 IC(pulse) 10 µs 1.0 Power Dissipation Limited 100 µs 0.1 1 ms s/b Limited (Note) 2 10 ms TC = 25˚C 0 0.01 0 50 100 150 1 200 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IC - Collector Current - A 1.6 1000 DC CURRENT GAIN vs. COLLECTOR CURRENT 100 mA mA mA mA mA mA mA mA mA mA hFE – DC Current Gain IB = 100 90 80 70 60 50 40 30 20 10 100 VCE - Collector to Emitter Voltage - V TA - Ambient Temperature - °C 2.0 10 1.2 0.8 VCE = 5 V Pulsed 10 0.4 0 0 1 2 3 4 0.001 5 0.01 COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLCTOR CURRENT TURN-ON, STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT 10 IC = 5 x IB Pulsed tf - Fall Time - µs tstg - Storage Time - µs ton - Turn-on Time - µs VBE(sat) - Base Saturation Voltage - V VCE(sat) - Collector Saturation Voltage - V 1 IC - Collector Current - A VCE - Collector to Emitter Voltage - V 10 0.1 VBE(sat) VCE(sat) 1 VCC = 200 V IC : IB1 : IB2 = 10 : 1 : −2 Pulsed tstg tf 1 ton 0.1 0.001 0.01 0.1 1.0 10 IC - Collector Current - A 0.1 1 10 IC - Collector Current - A Data Sheet D17082EJ2V0DS 3 2SC4346,4346-Z PACKAGE DRAWINGS (Unit: mm) 1.1±0.2 +0.2 0.5 −0.1 +0.2 0.5 −0.1 0.75 2.3 2.3 4 1. Base 2. Collector 3. Emitter 4. Fin (Collector) Data Sheet D17082EJ2V0DS 2 3 1.0 MIN. 1.8 TYP. 0.7 1 2.3±0.2 0.5±0.1 2.0 MIN. 1.1 ±0.2 0.8 4.3 MAX. 3 13.7 MIN. 2 5.5 ±0.2 1 4 1.5-0.1 6.5±0.2 5.0±0.2 0.5 ±0.1 5.5±0.2 10.0 MAX. 2.3 ±0.2 4 7.0 MIN. 1.6 ±0.2 5.0 ±0.2 1.5 −0.1 6.5 ±0.2 +0.2 2) TO-252 (MP-3Z) +0.2 1) TO-251 (MP-3) 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Base 2. Collector 3. Emitter 4. Fin (Collector) 2SC4346,4346-Z • The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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