NEC 2SC3569

DATA SHEET
SILICON POWER TRANSISTOR
2SC3569
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SC3569 is a mold power transistor developed for high-
PACKAGE DRAWING (UNIT: mm)
voltage high-speed switching, and is ideal for use in drivers such as
switching regulators, DC/DC converters, and high-frequency power
amplifiers.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
VCE(sat) = 1.0 V MAX. (@ 0.7 A)
• Fast switching speed:
tf ≤ 1.0 µs MAX. (@ 0.7 A)
• Wide base reverse-bias SOA:
VCEX(SUS) = 450 V MIN. (@ 0.5 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Electrode Connection
Emitter to base voltage
VEBO
7.0
V
2. Collector
Collector current (DC)
IC(DC)
2.0
A
IC(pulse)*
4.0
A
IB(DC)
1.0
A
Total power dissipation
PT (Tc = 25°C)
15
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1. Base
3. Emitter
Collector current (pulse)
Base current (DC)
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16187EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC3569
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Collector to emitter voltage
VCEO(SUS)
IC = 0.5 A, IB1 = 0.1 A, L = 1 mH
400
V
Collector to emitter voltage
VCEX(SUS)1
IC = 0.5 A, IB1 = −IB2 = 0.1 A,
L = 180 µH, clamped
450
V
Collector to emitter voltage
VCEX(SUS)2
IC = 1.0 A, IB1 = 0.2 A, −IB2 = 0.1 A,
L = 180 µH, clamped
400
V
ICBO
VCB = 400 V, IE = 0
10
µA
Collector cutoff current
ICER
VCE = 400 V, RBE = 51 Ω, Ta = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE = 400 V, VBE(OFF) = −1.5 V
10
µA
Collector cutoff current
ICEX2
VCE = 400 V, VBE(OFF) = −1.5 V,
Ta = 125°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
10
µA
DC current gain
hFE1*
VCE = 5.0 V, IC = 0.2 A
20
DC current gain
hFE2*
VCE = 5.0 V, IC = 0.5 A
10
Collector cutoff current
80
Collector saturation voltage
VCE(sat)*
IC = 0.7 A, IB = 0.14 A
1.0
V
Base saturation voltage
VBE(sat)*
IC = 0.7 A, IB = 0.14 A
1.2
V
IC = 0.7 A, RL = 214 Ω,
IB1 = −IB2 = 0.14 A, VCC ≅ 150 V
Refer to the test circuit.
1.0
µs
2.5
µs
1.0
µs
Turn-on time
ton
Storage time
tstg
Fall time
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
HFE1
20 to 40
30 to 60
40 to 80
Collector Current IC (mA)
Total Power Dissipation PT (W)
TYPICAL CHARACTERISTICS (Ta = 25°°C)
Case Temperature TC (°C)
2
Unit
Data Sheet D16187EJ1V0DS
Collector to Emitter Voltage VCE (V)
IC Derating dT (%)
Transient Thermal Resistance Rth(j-c) (°C/W)
2SC3569
Case Temperature TC (°C)
Ta = 25°C (without heatsink)
(with infinite heatsink)
Collector Current IC (A)
Collector Current IC (A)
Pulse Width PW (s)
Collector to Emitter Voltage VCE (V)
DC Current Gain hFE
Collector Saturation Voltage VCE(sat) (V)
Base Saturation Voltage VBE(sat) (V)
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Collector Current IC (mA)
Data Sheet D16187EJ1V0DS
3
Turn-On Time ton (µs)
StorageTime tstg (µs)
Fall Time tf (µs)
2SC3569
Collector Current IC (A)
Base current
waveform
Collector current
waveform
4
Data Sheet D16187EJ1V0DS
2SC3569
[MEMO]
Data Sheet D16187EJ1V0DS
5
2SC3569
• The information in this document is current as of July, 2001. The information is subject to change
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and/or types are available in every country. Please check with an NEC sales representative for
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M8E 00. 4