DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SD2383 is an element realizing high voltage in small 2.8 ±0.2 +0.1 0.4 –0.05 dimension. This transistor is ideal for downsizing sets requiring high voltage. +0.1 0.65 –0.15 1.5 3 0.4 +0.1 –0.05 • Small dimension 0.95 2.9 ±0.2 • High voltage 0.95 2 FEATURES 1 ORDERING INFORMATION SC-59 0.16 +0.1 –0.06 2SD2383 1.1 to 1.4 PACKAGE 0.3 Marking PART NUMBER 0 to 0.1 Marking: N1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 400 V Collector to Emitter Voltage VCEO 300 V Emitter to Base Voltage VEBO 5.0 V Collector Current (DC) IC(DC) 20 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C 1. Emitter 2. Base 3. Collector The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16154EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2002 2SD2383 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = 200 V, IE = 0 A 100 nA Emitter Cut-off Current IEBO VEB = 5.0 V, IC = 0 A 100 nA DC Current Gain hFE VCE = 6.0 V, IC = 5 mA 250 − 100 Collector Saturation Voltage VCE(sat) IC = 5.0 mA, IB = 0.5 mA 85 500 mV Base Saturation Voltage VBE(sat) IC = 5.0 mA, IB = 0.5 mA 0.68 1.0 V Gain Bandwidth Product fT VCE = 30 V, IE = −10 mA 90 MHz VCB = 30 V, IE = 0, f = 1 MHz 1.3 pF Output Capacitance Cob TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 250 100 −25˚ C C 1 600 700 0.5 0.2 25 50 75 100 125 800 900 1000 VBE - Base to Emitter Voltage - mV DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE = 6.0 V 500 TA = 75˚C 25˚C −25˚C 100 50 20 10 0.1 0.2 500 TA - Ambient Temperature - ˚C 1000 200 0.1 400 150 0.5 1 2 5 10 20 50 100 VCE(sat) - Collector Saturation Voltage - mV 0 hFE - DC Current Gain 2 C 50 5 25˚ 100 10 75˚ 150 20 TA = 200 0 1000 IC = 10.IB 500 TA = 75˚C 25˚C −25˚C 200 100 50 20 10 0.1 0.2 IC - Collector Current - mA 2 VCE = 6.0 V 50 IC - Collector Current - mA PT - Total Power Dissipation - W Free air 0.5 1 2 5 10 20 IC - Collector Current - mA Data Sheet D16154EJ2V0DS 50 100 2SD2383 GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 500 200 100 50 20 10 10 VCE = 30 V Cob - Output Capacitance - pF fT - Gain Bandwidth Product - MHz 1000 OUTPUT CAPACITANCE vs. REVERSE VOLTAGE −1 −2 −5 −10 −20 −50 −100 f = 1.0 MHz 5 2 1 0.5 0.2 0.1 IE - Emitter Current - mA 1 2 5 10 20 50 100 VCB - Collector to Base Voltage - V Data Sheet D16154EJ2V0DS 3 2SD2383 • The information in this document is current as of August, 2004. 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