DATA SHEET COMPOUND TRANSISTOR AB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING (UNIT: mm) • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive AB1 SERIES LISTS Products R1 (KΩ) R2 (KΩ) AB1A4A − 10 AB1L2Q 0.47 4.7 AB1A3M 1.0 1.0 AB1F3P 2.2 10 AB1J3P 3.3 10 AB1L3N 4.7 10 AB1A4M 10 10 ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 10 V Collector current (DC) IC(DC) 0.7 A Collector current (Pulse) IC(pulse) * 1.0 A IB(DC) 0.02 A Total power dissipation PT 750 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Base current (DC) * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D10836EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 AB1 SERIES AB1A4A ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = 30 V, IE = 0 MAX. Unit 100 nA DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 300 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 300 − hFE3 ** VCE = 2.0 V, IC = 0.7 A 135 DC current gain Collector saturation voltage Low level input voltage VCE(sat) ** VIL ** IC = 5.0 A, IC = 5 mA − 0.27 VCE = 5.0 V, IC = 100 µA 0.4 V 0.3 V − − Ω Input resistance R1 − E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit 100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % AB1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = 30 V, IE = 0 DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 150 400 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 300 700 − DC current gain hFE3 ** VCE = 2.0 V, IC = 0.7 A 135 600 − Low level output voltage VOL ** VIN = 5.0 V, IC = 0.5 A VIL ** VCE = 5.0 V, IC = 100 µA 0.2 0.3 V 0.3 V Input resistance R1 329 470 611 Ω E-to-B resistance R2 3.29 4.7 6.11 kΩ MIN. TYP. MAX. Unit 100 nA Low level input voltage ** PW ≤ 350 µs, duty cycle ≤ 2 % AB1A3M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = 30 V, IE = 0 DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 80 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 100 − DC current gain hFE3 ** VCE = 2.0 V, IC = 0.7 A 135 − Low level output voltage VOL ** VIN = 5.0 V, IC = 0.5 A Low level input voltage VIL ** VCE = 5.0 V, IC = 100 µA 0.4 V 0.3 V Input resistance R1 0.7 1.0 1.3 kΩ E-to-B resistance R2 0.7 1.0 1.3 kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % 2 0.3 Data Sheet D10836EJ2V0DS AB1 SERIES AB1F3P ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = 30 V, IE = 0 MAX. Unit 100 nA DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 300 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 300 − DC current gain hFE3 ** VCE = 2.0 V, IC = 0.7 A 135 Low level output voltage VOL ** VIN = 5.0 V, IC = 0.3 A 0.3 Low level input voltage VIL ** VCE = 5.0 V, IC = 100 µA 0.3 V − V Input resistance R1 1.54 2.2 2.86 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit 100 nA ** PW ≤ 350 µs, duty cycle ≤ 2 % AB1J3P ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = 30 V, IE = 0 DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 300 600 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 300 700 − DC current gain hFE3 ** VCE = 2.0 V, IC = 0.7 A 135 600 − Low level output voltage VOL ** VIN = 5.0 V, IC = 0.2 A VIL ** VCE = 5.0 V, IC = 100 µA 0.14 0.3 V 0.3 V Input resistance R1 2.31 3.3 4.29 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit 100 nA Low level input voltage ** PW ≤ 350 µs, duty cycle ≤ 2 % AB1L3N ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions VCB = 30 V, IE = 0 DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 300 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 300 − DC current gain hFE3 ** VCE = 2.0 V, IC = 0.7 A 135 − Low level output voltage VOL ** VIN = 5.0 V, IC = 0.2 A 0.3 V Low level input voltage VIL ** VCE = 5.0 V, IC = 100 µA 0.3 V Input resistance R1 3.29 4.7 6.11 kΩ E-to-B resistance R2 7 10 13 kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % Data Sheet D10836EJ2V0DS 3 AB1 SERIES AB1A4M ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Collector cutoff current Symbol ICBO Conditions TYP. VCB = 30 V, IE = 0 MAX. Unit 100 nA DC current gain hFE1 ** VCE = 2.0 V, IC = 0.1 A 300 − DC current gain hFE2 ** VCE = 2.0 V, IC = 0.5 A 300 − DC current gain hFE3 ** VCE = 2.0 V, IC = 0.7 A 135 Low level output voltage VOL ** VIN = 5.0 V, IC = 0.2 A 0.3 Low level input voltage VIL ** VCE = 5.0 V, IC = 100 µA 0.3 V − V Input resistance R1 7 10 13 kΩ E-to-B resistance R2 7 10 13 kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % 4 MIN. Data Sheet D10836EJ2V0DS AB1 SERIES TYPICAL CHARACTERISTICS (TD = 25°°C) Data Sheet D10836EJ2V0DS 5 AB1 SERIES • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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