DATA SHEET COMPOUND TRANSISTOR AQ1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING (UNIT: mm) FEATURES • High current drives such as IC and motor solenoid available up to 2 A • On-chip bias resistor • Low power consumption during drive AQ1 SERIES LISTS Products R1 (KΩ) R2 (KΩ) AQ1L2N 0.47 1.0 AQ1A3M 1.0 1.0 AQ1F3M 2.2 2.2 AQ1F3P 2.2 10 AQ1L2Q 0.47 4.7 AQ1F2Q 0.22 2.2 AQ1A4A − 10 Electrode Connection 1. Emitter EIAJ : SC-43B 2. Collector JEDEC: TO-92 3. Base IEC : PA33 ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Symbol Ratings Unit Collector to base voltage Parameter VCBO −20 V Collector to emitter voltage VCEO −20 V Emitter to base voltage VEBO −10 V Collector current (DC) IC(DC) −2.0 A IC(pulse) * −3.0 A Collector current (Pulse) IB(DC) −0.04 A Total power dissipation PT 750 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Base current (DC) * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D10840EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 AQ1 SERIES $4/1 (/(&75,&$/&+$5$&7(5,67,&67D °°& Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −20 V, IE = 0 MAX. Unit 100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 50 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 DC current gain Low level output voltage Low level input voltage VCE(sat) ** VIL ** − IC = −5.0 A, IC = −0.7 A −0.55 VCE = −5.0 V, IC = −100 µA −0.3 V V Input resistance R1 329 470 611 Ω E-to-B resistance R2 0.7 1.0 1.3 kΩ MIN. TYP. MAX. Unit −100 nA 3:≤µVGXW\F\FOH≤ $4$0 (/(&75,&$/&+$5$&7(5,67,&67D °°& Parameter Collector cutoff current Symbol ICBO Conditions VCB = −20 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 50 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − DC current gain hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 − Low level output voltage VOL ** IC = −5.0 A, IC = −0.5 A −0.4 VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V Low level input voltage V Input resistance R1 0.7 1.0 1.3 kΩ E-to-B resistance R2 0.7 1.0 1.3 kΩ MIN. TYP. MAX. Unit 100 nA 3:≤µVGXW\F\FOH≤ $4)0 (/(&75,&$/&+$5$&7(5,67,&67D °°& Parameter Collector cutoff current Symbol ICBO Conditions VCB = −20 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 80 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − DC current gain hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 Low level output voltage VOL ** IC = −5.0 A, IC = −0.3 A −0.3 V Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V Input resistance R1 1.54 2.2 2.86 kΩ E-to-B resistance R2 1.54 2.2 2.86 kΩ 3:≤µVGXW\F\FOH≤ − 'DWD6KHHW'(-9'6 AQ1 SERIES $4)3 (/(&75,&$/&+$5$&7(5,67,&67D °°& Parameter Collector cutoff current Symbol ICBO Conditions MIN. TYP. VCB = −20 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 200 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − DC current gain hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 Low level output voltage VOL ** IC = −5.0 A, IC = −0.3 A −0.3 Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V − V Input resistance R1 1.54 2.2 2.86 kΩ E-to-B resistance R2 7 10 13 kΩ MIN. TYP. MAX. Unit −100 nA 3:≤µVGXW\F\FOH≤ $4/4 (/(&75,&$/&+$5$&7(5,67,&67D °°& Parameter Collector cutoff current Symbol ICBO Conditions VCB = −20 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 150 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − DC current gain hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 − Low level output voltage VOL ** IC = −5.0 A, IC = −0.7 A −0.55 VIL ** VCE = −5.0 V, IC = −100 µA −0.3 V Low level input voltage V Input resistance R1 329 470 611 Ω E-to-B resistance R2 3.29 4.7 6.11 kΩ MIN. TYP. MAX. Unit −100 nA 3:≤µVGXW\F\FOH≤ $4)4 (/(&75,&$/&+$5$&7(5,67,&67D °°& Parameter Collector cutoff current Symbol ICBO Conditions VCB = −20 V, IE = 0 DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 80 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − DC current gain hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 Low level output voltage VOL ** IC = −5.0 A, IC = −0.7 A −0.55 V Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA –0.3 V − Input resistance R1 154 220 286 Ω E-to-B resistance R2 1.54 2.2 2.86 kΩ 3:≤µVGXW\F\FOH≤ 'DWD6KHHW'(-9'6 AQ1 SERIES $4$$ (/(&75,&$/&+$5$&7(5,67,&67D °°& Parameter Collector cutoff current Symbol ICBO Conditions TYP. VCB = −20 V, IE = 0 MAX. Unit −100 nA DC current gain hFE1 ** VCE = −2.0 V, IC = −0.1 A 200 − DC current gain hFE2 ** VCE = −2.0 V, IC = −1.0 A 150 − DC current gain hFE3 ** VCE = −2.0 V, IC = −2.0 A 50 Collector saturation voltage VOL ** IC = −1.0 A, IC = −20 mA Low level input voltage VIL ** VCE = −5.0 V, IC = −100 µA Input resistance R1 E-to-B resistance R2 7 'DWD6KHHW'(-9'6 − −0.35 − 3:≤µVGXW\F\FOH≤ MIN. −0.45 V –0.3 V − − Ω 10 13 kΩ AQ1 SERIES 7<3,&$/&+$5$&7(5,67,&67a °°& 'DWD6KHHW'(-9'6 AQ1 SERIES • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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