NEC HR1A3M

DATA SHEET
COMPOUND TRANSISTOR
HR1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
FEATURES
PACKAGE DRAWING (UNIT: mm)
• Up to 2A high current drives such as IC outputs and actuators
available
• On-chip bias resistor
• Low power consumption during drive
HR1 SERIES LISTS
Products
Marking
R1 (KΩ)
R2 (KΩ)
HR1A3M
MP
1.0
1.0
HR1F3P
MQ
2.2
10
HR1L3N
MR
4.7
10
HR1A4,
MS
10
10
HR1L2Q
MT
0.47
4.7
HR1F2Q
MU
0.22
2.2
HR1A4A
MX
−
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−60
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−10
V
Collector current (DC)
IC(DC)
−1.0
A
IC(pulse) *
−2.0
A
Base current (DC)
IB(DC)
−0.02
A
Total power dissipation
Collector current (Pulse)
PT **
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50 %
** When 0.7 mm × 16 cm ceramic board is used
2
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16184EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
HR1 SERIES
+5$0
(/(&75,&$/&+$5$&7(5,67,&67D °°&
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
MIN.
TYP.
VCB = −60 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
50
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.4 A
−0.4
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
−
V
Input resistance
R1
0.7
1.0
1.3
kΩ
E-to-B resistance
R2
0.7
1.0
1.3
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
3:≤µVGXW\F\FOH≤
+5)3
(/(&75,&$/&+$5$&7(5,67,&67D °°&
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
150
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
−
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.3 A
−0.3
VIL **
VCE = –5.0 V, IC = −100 µA
−0.3
V
Low level input voltage
V
Input resistance
R1
1.54
2.2
2.86
kΩ
E-to-B resistance
R2
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
3:≤µVGXW\F\FOH≤
+5/1
(/(&75,&$/&+$5$&7(5,67,&67D °°&
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
150
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.2 A
−0.3
V
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
Input resistance
R1
3.29
4.7
6.11
kΩ
E-to-B resistance
R2
7
10
13
kΩ
3:≤µVGXW\F\FOH≤
−
'DWD6KHHW'(-9'6
HR1 SERIES
+5$0
(/(&75,&$/&+$5$&7(5,67,&67D °°&
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
MIN.
TYP.
VCB = −60 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
150
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.1 A
−0.2
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
−
V
Input resistance
R1
7
10
13
kΩ
E-to-B resistance
R2
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
3:≤µVGXW\F\FOH≤
+5/4
(/(&75,&$/&+$5$&7(5,67,&67D °°&
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
150
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
−
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.5 A
−0.55
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
Low level input voltage
V
Input resistance
R1
329
470
611
Ω
E-to-B resistance
R2
3.29
4.7
6.11
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
3:≤µVGXW\F\FOH≤
+5)4
(/(&75,&$/&+$5$&7(5,67,&67D °°&
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −60 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
100
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.5 A
−0.55
V
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
−
Input resistance
R1
154
220
286
kΩ
E-to-B resistance
R2
1.54
2.2
2.86
kΩ
3:≤µVGXW\F\FOH≤
'DWD6KHHW'(-9'6
HR1 SERIES
+5$$
(/(&75,&$/&+$5$&7(5,67,&67D °°&
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
TYP.
VCB = −60 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
150
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
hFE3 **
VCE = −2.0 V, IC = −1.0 A
50
DC current gain
Collector saturation voltage
Low level input voltage
VCE(sat) **
IC = −500 mA, IB = −10 mA
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
Input resistance
R1
E-to-B resistance
R2
7
'DWD6KHHW'(-9'6
−
0.20
−
3:≤µVGXW\F\FOH≤
MIN.
0.35
V
−1.5
V
−
−
Ω
10
13
kΩ
HR1 SERIES
7<3,&$/&+$5$&7(5,67,&67a °°&
'DWD6KHHW'(-9'6
HR1 SERIES
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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M8E 00. 4