DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) ORDERING INFORMATION Part Number Quantity NE661M04 Loose product (50 pcs) NE661M04-T2 Taping product (3 kpcs/reel) Packaging Style • 8 mm wide emboss taping • 1 pin (emitter), 2 pin (collector) feed hole direction Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units). ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 3.3 V Emitter to Base Voltage VEBO 1.5 V IC 12 mA 39 mW Collector Current Ptot Total Power Dissipation Note Junction Temperature Tj 150 °C Storage Temperature Tstg –65 to +150 °C Symbol Value Unit Junction to Case Resistance Rth j-c 240 °C/W Junction to Ambient Resistance Rth j-a 650 °C/W Note TA = +25°C (free air) THERMAL RESISTANCE Item Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14909EJ1V0DS00 (1st edition) Date Published June 2000 N CP(K) Printed in Japan © 2000 NE661M04 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 – – 100 nA Emitter Cut-off Current IEBO DC Current Gain VEB = 1 V, IC = 0 – – 100 nA Note 1 VCE = 2 V, IC = 5 mA 50 70 100 – Note 2 VCB = 2 V, IE = 0, f = 1 MHz – 0.08 0.12 pF VCE = 3 V, IC = 10 mA, f = 2 GHz 20 25 – GHz VCE = 2 V, IC = 2 mA, f = 2 GHz, ZS = Zopt – 1.2 1.5 dB VCE = 2 V, IC = 5 mA, f = 2 GHz 14 17 – dB VCE = 2 V, IC = 5 mA, f = 2 GHz hFE RF Characteristics Reverse Transfer Capacitance Gain Bandwidth Product Noise Figure Insertion Power Gain Maximum Stable Power Gain Output Power at 1 dB Compression Point Output Power at Third Order Intercept Point Cre fT NF |S21e|2 Note 3 MSG P-1 VCE = 2 V, IC = 5 mA Note 4 OIP3 VCE = 2 V, IC = 5 mA Note 4 , f = 2 GHz , f = 2 GHz – 22 – dB – 5 – dBm – 15 – – Notes 1. Pulse measurement PW ≤ 350 µs, Duty cycle ≤ 2% 2. Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when the emitter is connected to the guard pin S21 3. MSG = S12 4. Collector current when P-1 is output hFE CLASSIFICATION 2 Rank FB Marking T78 hFE 50 to 100 Data Sheet P14909EJ1V0DS00 NE661M04 TYPICAL CHARACTERISTICS (TA = +25°C) Thermal/DC Characteristics Total Power Dissipation vs. Ambient Temperature, Case Temperature Collector Current vs. DC Base Voltage 50 PT-TA: Free air PT-TA: Mounted on ceramic board (15 mm × 15 mm, t = 0.6 mm) PT-TC: When case temperature is specified 200 Collector Current IC (mA) Total Power Dissipation PT (mW) 250 150 100 50 0 0 25 50 75 100 125 VCE = 2 V 40 30 20 10 150 0 0.2 Ambient Temperature TA (°C), Case Temperature TC (°C) 0.6 0.8 1.0 1.2 DC Current Gain vs. Collector Current Collector Current vs. Collector to Emitter Voltage 200 25 300 µ A 280 µ A 260 µ A 240 µ A 220 µ A 200 µ A 180 µ µA 160 µ A 140 µ A 120 µ A 100 µ A 80 µA 60 µA 40 µ A IB = 20 µ A 20 15 10 VCE = 2 V 100 DC Current Gain hFE Collector Current IC (mA) 0.4 DC Base Voltage VBE (V) 10 5 0 1 2 3 4 1 0.001 5 Collector to Emitter Voltage VCE (V) 0.01 0.1 1 10 100 Collector Current IC (mA) Capacitance/fT Characteristics Gain Bandwidth Product vs. Collector Current 30 f = 1 MHz 0.25 0.20 0.15 0.10 0.05 0 1.0 2.0 3.0 4.0 5.0 Gain Bandwidth Product fT (GHz) Reverse Transfer Capacitance Cre (pF) Reverse Transfer Capacitance vs. Collector to Base Voltage 0.30 VCE = 3 V f = 2 GHz 25 20 15 10 5 0 Collector to Base Voltage VCB (V) 1 10 100 Collector Current IC (mA) Data Sheet P14909EJ1V0DS00 3 NE661M04 Gain Characteristics Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Frequency 40 VCE = 2 V IC = 5 mA 35 30 MSG 25 MAG 20 |S21e|2 15 10 5 0 0.1 1.0 10.0 Frequency f (GHz) 30 f = 1 GHz VCE = 2 V MSG 25 Insertion Power Gain, Maximum Available Power Gain, Maximum Stable Power Gain vs. Collector Current Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain, Maximum Stable Power Gain vs. Collector Current 20 |S21e|2 15 10 5 0 1 10 100 30 25 f = 2 GHz VCE = 2 V MAG MSG 20 15 |S21e|2 10 5 0 1 10 Collector Current IC (mA) 100 Collector Current IC (mA) Output Characteristics f = 1 GHz VCE = 2 V 0 15 –5 10 IC –10 5 0 –20 –15 –10 –5 Output Power Pout (dBm) 20 –25 25 f = 2 GHz VCE = 2 V Pout 5 –15 –30 10 Collector Current IC (mA) Output Power Pout (dBm) Output Power, Collector Current vs. Input Power 25 5 20 0 15 –5 10 IC –10 –15 –30 Input Power Pin (dBm) 4 Pout 5 0 –25 –20 –15 Input Power Pin (dBm) Data Sheet P14909EJ1V0DS00 –10 –5 Collector Current IC (mA) Output Power, Collector Current vs. Input Power 10 NE661M04 Noise Characteristics 25 4 20 3 15 NF 10 1 0 1 10 100 4 15 2 1 0 0 5 1 Noise Figure, Associated Gain vs. Collector Current 20 15 2 10 NF 1 10 100 f = 2.5 GHz VCE = 2 V 5 Noise Figure NF (dB) Noise Figure NF (dB) 25 3 0 0 30 6 Associated Gain Ga (dB) f = 2.0 GHz VCE = 2 V 1 100 Noise Figure, Associated Gain vs. Collector Current 30 Ga 10 Collector Current IC (mA) 6 4 10 NF Collector Current IC (mA) 5 20 Ga 3 5 25 4 20 Ga 15 3 2 5 1 0 0 25 10 NF Associated Gain Ga (dB) 2 30 f = 1.5 GHz VCE = 2 V 5 Noise Figure NF (dB) f = 1.0 GHz VCE = 2 V Associated Gain Ga (dB) Ga 5 Noise Figure NF (dB) Noise Figure, Associated Gain vs. Collector Current 6 30 Associated Gain Ga (dB) Noise Figure, Associated Gain vs. Collector Current 6 5 1 Collector Current IC (mA) 10 100 0 Collector Current IC (mA) Data Sheet P14909EJ1V0DS00 5 NE661M04 S PARAMETER VCE = 2 V, IC = 2 mA Frequency 6 S11 S21 GHz MAG. ANG. MAG. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.90 0.89 0.89 0.88 0.87 0.87 0.86 0.84 0.83 –3.7 –7.1 –10.6 –14.2 –17.6 –21.0 –24.6 –28.0 –31.5 6.45 6.25 6.12 6.02 5.96 5.87 5.79 5.69 5.64 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 0.82 0.80 0.79 0.77 0.76 0.74 0.72 0.70 0.68 0.66 –35.0 –38.6 –42.0 –45.8 –49.4 –53.4 –57.1 –61.0 –65.0 –69.2 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 0.64 0.62 0.60 0.58 0.56 0.55 0.52 0.50 0.47 0.42 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.40 0.47 0.49 0.56 0.63 0.69 0.74 0.79 S12 ANG. S22 MAG. ANG. MAG. ANG. 174.8 170.8 167.2 163.6 160.2 156.9 153.4 150.3 147.1 0.00 0.01 0.01 0.02 0.02 0.02 0.03 0.03 0.03 81.9 77.9 75.5 75.7 74.1 72.4 70.0 68.7 66.9 0.98 0.95 0.94 0.92 0.91 0.90 0.89 0.88 0.87 –3.6 –6.0 –7.9 –9.5 –11.0 –12.7 –14.3 –15.6 –17.3 5.54 5.50 5.42 5.37 5.28 5.25 5.19 5.14 5.06 5.04 143.8 140.7 137.7 134.5 131.6 128.5 125.2 122.4 119.2 116.1 0.03 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.06 65.2 63.3 62.2 60.1 58.4 57.0 55.0 53.1 52.1 50.9 0.86 0.84 0.83 0.82 0.81 0.80 0.78 0.77 0.76 0.75 –18.9 –20.3 –21.8 –23.3 –24.9 –26.4 –27.8 –29.3 –30.7 –32.2 –73.3 –77.7 –82.1 –86.9 –91.8 –97.1 –102.5 –108.7 –115.5 –120.2 4.98 4.91 4.82 4.78 4.68 4.62 4.53 4.46 4.29 4.11 113.0 109.9 106.9 103.6 100.6 97.5 94.1 90.8 87.5 85.2 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.06 49.1 46.6 45.6 43.8 42.2 40.5 39.0 37.0 34.8 34.7 0.73 0.72 0.71 0.69 0.68 0.66 0.65 0.63 0.62 0.61 –33.6 –35.1 –36.3 –37.8 –39.2 –40.5 –41.9 –43.0 –44.1 –44.0 –119.0 –159.3 163.9 141.2 123.9 111.6 102.1 95.1 4.06 3.24 2.74 2.34 2.00 1.70 1.44 1.19 84.6 66.5 45.5 26.7 9.3 –6.5 –21.4 –34.9 0.06 0.07 0.07 0.08 0.09 0.11 0.12 0.13 38.1 33.4 33.5 35.9 37.0 35.9 31.3 25.3 0.61 0.51 0.44 0.40 0.38 0.39 0.44 0.52 –45.4 –55.3 –69.8 –88.9 –112.9 –138.6 –163.4 175.7 Data Sheet P14909EJ1V0DS00 NE661M04 VCE = 2 V, IC = 5 mA Frequency S11 S21 GHz MAG. ANG. MAG. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.82 0.82 0.80 0.79 0.78 0.76 0.74 0.72 0.70 –4.7 –9.2 –13.8 –18.0 –22.4 –26.6 –31.1 –35.3 –39.4 10.44 10.28 10.09 9.89 9.73 9.55 9.36 9.19 9.01 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 0.68 0.66 0.63 0.61 0.58 0.56 0.53 0.51 0.49 0.46 –43.6 –47.9 –51.9 –56.2 –60.3 –64.7 –68.9 –73.3 –77.6 –82.0 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 0.44 0.42 0.40 0.38 0.36 0.35 0.33 0.32 0.30 0.25 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 0.23 0.31 0.42 0.51 0.58 0.65 0.71 0.76 0.78 0.79 S12 ANG. S22 MAG. ANG. MAG. ANG. 173.8 168.8 164.2 159.8 155.6 151.5 147.4 143.5 139.6 0.00 0.01 0.01 0.01 0.02 0.02 0.02 0.03 0.03 80.8 75.3 75.0 74.1 72.2 70.4 68.0 66.6 64.9 0.97 0.94 0.92 0.90 0.88 0.87 0.85 0.84 0.82 –4.1 –7.1 –9.4 –11.5 –13.4 –15.4 –17.3 –18.9 –20.8 8.82 8.67 8.46 8.27 8.07 7.91 7.72 7.54 7.35 7.18 135.8 132.0 128.6 124.8 121.5 117.9 114.5 111.3 108.2 105.0 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 63.3 61.2 60.7 58.7 57.8 56.3 55.5 53.8 53.4 51.9 0.80 0.78 0.77 0.75 0.73 0.72 0.70 0.69 0.67 0.65 –22.4 –23.9 –25.5 –26.9 –28.4 –29.7 –31.0 –32.3 –33.6 –34.9 –86.7 –91.6 –96.5 –101.9 –107.6 –113.6 –120.2 –127.9 –137.3 –144.7 7.00 6.83 6.66 6.49 6.32 6.16 6.00 5.82 5.59 5.29 102.0 98.9 95.9 92.9 90.0 87.0 84.1 80.9 77.9 76.3 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 51.6 49.6 49.6 48.3 47.4 46.2 45.3 44.6 42.5 44.1 0.64 0.62 0.61 0.60 0.58 0.57 0.55 0.53 0.52 0.52 –36.1 –37.2 –38.2 –39.5 –40.5 –41.7 –42.7 –43.4 –43.8 –43.2 –142.4 175.3 147.1 130.2 116.8 106.9 99.0 92.8 89.2 84.8 5.22 4.23 3.50 2.94 2.52 2.16 1.85 1.57 1.36 1.16 76.0 62.3 41.8 25.6 9.8 –5.0 –19.3 –32.6 –44.5 –55.1 0.06 0.06 0.08 0.09 0.10 0.12 0.13 0.14 0.14 0.15 48.2 46.8 45.6 42.7 38.6 34.4 28.7 22.9 17.8 13.4 0.52 0.44 0.36 0.31 0.29 0.31 0.36 0.44 0.53 0.60 –44.8 –48.3 –70.4 –89.6 –115.3 –143.0 –168.2 172.1 158.5 149.8 Data Sheet P14909EJ1V0DS00 7 NE661M04 NOISE PARAMETER <Equal NF circle> VCE = 2 V IC = 2 mA f = 1 GHz VCE = 2 V IC = 2 mA f = 2 GHz Unstable area Unstable area NFmin = 1.1 dB Γopt 1.5 dB 3. 2.5 NFmin = 1.0 dB Γopt 1.5 2.0 dB dB dB 2.0 dB 2.5 3. 3. dB 4.05 dB 0 dB dB 5 3.0 dB dB 4.0 dB VCE = 2 V, IC = 2 mA f (GHz) NFmin (dB) Ga (dB) 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 0.93 0.95 0.97 1.08 1.14 1.16 1.18 1.29 22.9 22.2 21.6 18.8 17.5 17.1 16.7 15.2 Γopt Rn/50 MAG. ANG. 0.54 0.54 0.54 0.53 0.51 0.50 0.49 0.44 13.3 14.9 16.4 24.6 30.3 32.4 34.6 47.7 0.47 0.47 0.47 0.45 0.43 0.42 0.41 0.35 VCE = 2 V, IC = 5 mA 8 f (GHz) NFmin (dB) Ga (dB) 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 1.59 1.60 1.60 1.62 1.63 1.63 1.63 1.65 24.7 24.1 23.4 20.7 19.3 18.9 18.5 16.9 Γopt Rn/50 MAG. ANG. 0.38 0.38 0.38 0.36 0.34 0.33 0.32 0.26 10.7 11.9 13.2 20.5 25.7 27.5 29.4 40.1 Data Sheet P14909EJ1V0DS00 0.43 0.43 0.43 0.41 0.38 0.38 0.37 0.32 NE661M04 PACKAGE DRAWINGS Flat-lead 4-pin thin super mini-mold (unit: mm) 0.40 +0.1 –0.05 2.05 ± 0.1 0.65 4 0.30 +0.1 –0.05 (LEADS1,3,4) 1 1.30 3 0.65 0.60 0.11 +0.1 –0.05 0.59 ± 0.05 1.25 0.65 T78 2.0 ± 0.1 2 1.25 ± 0.1 Pin connections 1. Emitter 2. Collector 3. Emitter 4. Base Data Sheet P14909EJ1V0DS00 9 NE661M04 SOLDERING CONDITIONS Solder this product under the following recommended conditions. For soldering methods and conditions other than those recommended, consult NEC. Soldering Method(s) Soldering Conditions Recommended Conditions Symbol Infrared reflow Package peak temperature: 235°C, Time: 30 sec max. (210°C min.), Note Number of times: twice max., Maximum number of days: None IR35-00-2 VPS Package peak temperature: 215°C, Time: 40 sec max. (200°C min.), Note Number of times: twice max., Maximum number of days: None VP15-00-2 Wave soldering Solder bath temperature: 260°C, Time: 10 sec max., Number of Note times: once, Maximum number of days: None WS60-00-1 Note Number of days in storage after the dry pack has been opened. The storage conditions are at 25°C, 65% RH MAX. Caution Do not use two or more soldering methods in combination. For details of the recommended soldering conditions, refer to information document Semiconductor Device Mounting Technology Manual (C10535E). 10 Data Sheet P14909EJ1V0DS00 NE661M04 [MEMO] Data Sheet P14909EJ1V0DS00 11 NE661M04 • The information in this document is current as of June, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4