DATA SHEET PHOTOCOUPLER PS2511-1,-2,-4, PS2511L-1,-2,-4 HIGH ISOLATION VOLTAGE STANDARD MULTI PHOTOCOUPLER SERIES SINGLE TRANSISTOR TYPE −NEPOC TM Series− DESCRIPTION The PS2511-1, -2, -4 and PS2511L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2511-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2511L-1, -2, -4 are lead bending type (Gull-wing) for surface mount. FEATURES • High isolation voltage (BV = 5 000 Vr.m.s.) • High current transfer ratio (CTR = 200 % TYP.) • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) • Taping Product number : PS2511L-1-E3, E4, F3, F4, PS2511L-2-E3, E4 • UL approved : File No. E72422 (S) APPLICATIONS • Power supply • Telephone/FAX. • FA/OA equipment • Programmable logic controller The information in this document is subject to change without notice. Document No. P12975EJ1V0DS00 (1st edition) Date Published October 1998 NS CP(K) Printed in Japan © 1997 PS2511-1,-2,-4, PS2511L-1,-2,-4 PACKAGE DIMENSIONS (in millimeters) DIP (Dual In-line Package) PS2511-4 PS2511-1 TOP VIEW TOP VIEW 4 3 16 15 14 13 1211 10 9 4.6 ± 0.35 20.3 MAX. 1 2 Anode Cathode Emitter Collector 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 6.5 6.5 1. 2. 3. 4. 1.25±0.15 0.50 ± 0.10 0.25 M 0 to 15˚ 3.8 MAX. 0.65 2.8 4.55 MIN. MAX. 3.8 MAX. 7.62 0.65 2.8 4.55 MIN. MAX. 7.62 0.50 ± 0.10 0.25 M 1.25±0.15 0 to 15˚ 2.54 2.54 PS2511-1 PS2511-2 TOP VIEW TOP VIEW 4 3 8 7 6 5 10.2 MAX. 5.1 MAX. 1 2 Anode Cathode Emitter Collector 1 1, 3. 2, 4. 5, 7. 6, 8. 6.5 6.5 1. 2. 3. 4. 1.25±0.15 0.50 ± 0.10 0.25 M 3.8 MAX. 0.65 2.8 4.55 MIN. MAX. 3.8 MAX. 7.62 0.65 2.8 4.55 MIN. MAX. 7.62 0.50 ± 0.10 0.25 M 1.25±0.15 0 to 15˚ 2.54 0 to 15˚ 2.54 TOP VIEW PS2511-4 16 15 14 13 12 11 10 9 20.3 MAX. 6.5 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 3.8 MAX. 0.65 2.8 4.55 MIN. MAX. 7.62 0.50 ± 0.10 0.25 M 1.25±0.15 2.54 2 2 3 4 Anode Cathode Emitter Collector 0 to 15˚ PS2511-1,-2,-4, PS2511L-1,-2,-4 Lead Bending Type (Gull-wing) PS2511L-4 PS2511L-1 TOP VIEW TOP VIEW 4 3 16 15 14 13 1211 10 9 4.6 ± 0.35 20.3 MAX. 0.90 ± 0.25 6.5 7.62 0.90 ± 0.25 1.25±0.15 0.25 M 9.60 ± 0.4 9.60 ± 0.4 2.54 2.54 PS2511L-1 PS2511L-2 TOP VIEW TOP VIEW 4 3 8 7 6 5 10.2 MAX. 5.1 MAX. 6.5 7.62 0.90 ± 0.25 0.90 ± 0.25 1.25±0.15 0.25 M 9.60 ± 0.4 2.54 2 3 4 Anode Cathode Emitter Collector 9.60 ± 0.4 2.54 PS2511L-4 TOP VIEW 16 15 14 13 12 11 10 9 20.3 MAX. 6.5 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 3.8 MAX. 7.62 0.05 to 0.2 1.25±0.15 0.25 M 1 1, 3. 2, 4. 5, 7. 6, 8. 3.8 MAX. 3.8 MAX. 7.62 0.05 to 0.2 6.5 1. 2. 3. 4. 1 2 Anode Cathode Emitter Collector 0.05 to 0.2 1.25±0.15 0.25 M 0.05 to 0.2 3.8 MAX. 7.62 1 2 3 4 5 6 7 8 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,11,13,15. Emitter 10,12,14,16. Collector 3.8 MAX. 0.05 to 0.2 6.5 1. 2. 3. 4. 1 2 Anode Cathode Emitter Collector 0.90 ± 0.25 1.25±0.15 0.25 M 9.60 ± 0.4 2.54 3 PS2511-1,-2,-4, PS2511L-1,-2,-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Symbol Ratings PS2511-1, PS2511L-1 Diode PS2511-2,-4 PS2511L-2,-4 Reverse Voltage VR 6 V Forward Current (DC) IF 50 mA Power Dissipation Derating Power Dissipation Peak Forward Current Transistor Unit *1 ∆PD/°C 0.7 0.55 mW/°C PD 70 55 mW/ch IFP 1 A Collector to Emitter Voltage VCEO 40 V Emitter to Collector Voltage VECO 5 V IC 40 mA Collector Current Power Dissipation Derating Power Dissipation *2 ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch Isolation Voltage BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output 4 PS2511-1,-2,-4, PS2511L-1,-2,-4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz Transistor Collector to Emitter Dark Current ICEO VCE = 40 V, IF = 0 mA Coupled Current Transfer Ratio *1 (IC/IF) CTR IF = 5 mA, VCE = 5 V VCE(sat) IF = 10 mA, IC = 2 mA Collector Saturation Voltage RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz *2 Rise Time tr *2 tf *1 CTR rank (PS2511-1,PS2511L-1 only) TYP. MAX. Unit 1.2 1.4 V 5 µA 50 80 200 10 VCC = 10 V, IC = 2 mA, RL = 100 Ω pF 100 nA 400 % 0.3 V Ω 11 Isolation Resistance Fall Time MIN. 0.5 pF 3 µs 5 *2 Test Circuit for Switching Time D : 100 to 300 % Pulse Input IF VCC PW = 100 µs Duty Cycle = 1/10 In monitor 50 Ω VOUT RL = 100 Ω 5 PS2511-1,-2,-4, PS2511L-1,-2,-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 75 PS2511-1 PS2511L-1 50 25 0.7 mW/˚C PS2511-2 PS2511L-2 PS2511-4 PS2511L-4 0.55 mW/˚C 0 25 50 75 125 100 150 100 PS2511-2 PS2511L-2 PS2511-4 PS2511L-4 1.5 mW/˚C 50 1.2 mW/˚C 25 50 75 100 125 150 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 50 Collector Current IC (mA) Forward Current IF (mA) PS2511-1 PS2511L-1 0 100 10 150 TA = +100 ˚C +60 ˚C +25 ˚C 1 0 ˚C –25 ˚C –50 ˚C 0.1 40 50 30 mA 20 mA 10 mA 20 5 mA 10 IF = 1 mA 0.5 1.0 1.5 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 10 000 100 1 000 100 10 1 VCE = 80 V 40 V 25 V 10 V 5V 0.1 0.01 –50 –25 0 25 50 75 Ambient Temperature TA (˚C) 6 0 2.0 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 0.01 0.0 100 50 mA 20 mA 10 mA 5 mA 10 2 mA IF = 1 mA 1 0.1 0.0 0.2 0.4 0.6 0.8 Collector Saturation Voltage VCE(sat) (V) 1.0 PS2511-1,-2,-4, PS2511L-1,-2,-4 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 1.2 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 5 mA, VCE = 5 V 0.2 0.0 –50 –25 0 25 50 75 200 150 100 50 0.1 1 10 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE 100 1 000 IC = 2 mA, VCC = 10 V, CTR = 220 % IF = 5 mA, VCC = 5 V, CTR = 220 % tf tr Switching Time t ( µ s) Switching Time t ( µ s) VCE = 5 V 250 0 0.01 100 100 10 td ts 1 0.1 10 100 tf 100 ts 10 tr td 1 0.1 10 10 k 1k 100 1k 10 k 100 k Load Resistance RL (Ω) Load Resistance RL (Ω) FREQUENCY RESPONSE LONG TERM CTR DEGRADATION 1.2 IC = 1 mA, VCC = 5 V 0 Normalized Gain GV Current Transfer Ratio CTR (%) 300 –5 –10 100 Ω –15 RL = 1 kΩ IF = 5 mA (TYP.) 1.0 CTR (Relative Value) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 0.8 TA = 25 ˚C 0.6 TA = 60 ˚C 0.4 0.2 –20 300 Ω 0.5 1 2 5 10 20 50 100 200 500 Frequency f (kHz) 0 102 103 104 105 Time (Hr) Remark The graphs indicate nominal characteristics. 7 PS2511-1,-2,-4, PS2511L-1,-2,-4 TAPING SPECIFICATIONS (in millimeters) 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 1.55±0.1 5.6±0.1 8.0±0.1 Tape Direction PS2511L-1-E3 PS2511L-1-F3 PS2511L-1-E4 PS2511L-1-F4 R 1.0 φ 21.0±0.8 φ 80.0±5.0 2.0±0.5 φ 13.0±0.5 PS2511L-1-E3, E4: φ 250 PS2511L-1-F3, F4: φ 330 Outline and Dimensions (Reel) 16.4 +2.0 –0.0 Packing: PS2511L-1-E3, E4 1 000 pcs/reel PS2511L-1-F3, F4 2 000 pcs/reel 8 PS2511-1,-2,-4, PS2511L-1,-2,-4 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 10.4±0.1 1.55±0.1 12.0±0.1 Tape Direction PS2511L-2-E3 PS2511L-2-E4 Outline and Dimensions (Reel) φ 21.0±0.8 φ 80.0±5.0 R 1.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 9 PS2511-1,-2,-4, PS2511L-1,-2,-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 10 PS2511-1,-2,-4, PS2511L-1,-2,-4 [MEMO] 11 PS2511-1,-2,-4, PS2511L-1,-2,-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5