DATA SHEET PHOTOCOUPLER PS2521-1,-2,-4,PS2521L-1,-2,-4 LARGE FORWARD INPUT TYPE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC TM Series− DESCRIPTION The PS2521-1, -2, -4 and PS2521L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2521-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2521L-1, -2, -4 are lead bending type (Gull-wing) for surface mount. FEATURES • Large forward input current (IF = 150 mA) • High Isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High-speed switching (tr = 3 µs TYP., tf = 5 µs TYP.) • Ordering number of taping product: PS2521L-1-E3, E4, F3, F4, PS2521L-2-E3, E4 • UL approved: File No. E72422 (S) APPLICATIONS • Exchange equipment • FAX/MODEM • LCR adapter The information in this document is subject to change without notice. Document No. P11432EJ3V0DS00 (3rd edition) Date Published December 1997 NS CP(K) Printed in Japan The mark • shows major revised points. © 1993 PS2521-1,-2,-4,PS2521L-1,-2,-4 PACKAGE DIMENSIONS (in millimeters) DIP type PS2521-1 PS2521-2 TOP VIEW TOP VIEW 4 5.1 MAX. 3 8 10.2 MAX. 1 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 7 0 to 15˚ 3.8 MAX. 0.65 2.8 MIN. 4.55 MAX. 3.8 MAX. 7.62 6.5 0.65 2.8 MIN. 4.55 MAX. 2.54 2.54 1.25±0.15 0 to 15˚ 0.50±0.10 0.25 M 0.50±0.10 0.25 M PS2521-4 TOP VIEW 20.3 MAX. 16 15 1 2 14 13 12 10 9 3 4 5 6 7 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9, 11, 13, 15. Emitter 10, 12, 14, 16. Collector 8 3.8 MAX. 0.65 2.8 MIN. 4.55 MAX. 7.62 6.5 2.54 1.25±0.15 0.50±0.10 0.25 M 2 0 to 15˚ 5 2 3 4 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 7.62 6.5 1.25±0.15 6 11 PS2521-1,-2,-4,PS2521L-1,-2,-4 Lead bending type PS2521L-1 PS2521L-2 TOP VIEW TOP VIEW 3 8 10.2 MAX. 1 6 5 2 3 4 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 7.62 6.5 3.8 MAX. 3.8 MAX. 2.54 1.25±0.15 0.25 M 0.05 to 0.2 1 2 1. Anode 2. Cathode 3. Emitter 4. Collector 7.62 6.5 7 0.05 to 0.2 4 5.1 MAX. 0.9±0.25 9.60±0.4 0.9±0.25 9.60±0.4 2.54 1.25±0.15 0.25 M PS2521L-4 TOP VIEW 15 1 2 14 13 12 10 9 3 4 5 6 7 1, 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9, 11, 13, 15. Emitter 10, 12, 14, 16. Collector 8 3.8 MAX. 7.62 6.5 1.25±0.15 0.25 M 2.54 11 0.05 to 0.2 20.3 MAX. 16 0.9±0.25 9.60±0.4 3 PS2521-1,-2,-4,PS2521L-1,-2,-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Ratings Diode Parameter Symbol Forward Current (DC) IF 150 mA Reverse Voltage VR 6.0 V Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 PS2521-2, -4, PS2521L-2, -4 PS2521-1, PS2521L-1 Unit ∆PD/°C 2.5 2.0 mW/°C PD 250 200 mW/ch IFP 1 A Collector to Emitter Voltage VCEO 80 V Emitter to Collector Voltage VECO 6 V IC 50 mA/ch Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 ∆PC/°C 1.5 1.2 mW/°C PC 150 120 mW/ch BV 5 000 Vr.m.s. Operating Ambient Temperature TA −55 to +100 °C Storage Temperature Tstg −55 to +150 °C *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output 4 PS2521-1,-2,-4,PS2521L-1,-2,-4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Transistor Coupled Symbol Conditions Forward Voltage VF IF = 100 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz Collector to Emitter Dark Current ICEO VCE = 80 V, IF = 0 mA Current Transfer Ratio CTR IF = 100 mA, VCE = 3 V Collector Saturation Voltage VCE (sat) IF = 100 mA, IC = 4 mA Isolation Resistance RI-O VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz *1 tr Rise Time Fall Time *1 MIN. TYP. MAX. Unit 1.3 1.7 V 5 µA 70 20 tf 100 nA 80 % 0.3 V Ω 11 10 VCC = 10 V, IC = 2 mA, RL = 100 Ω pF 0.6 pF 3 µs 5 *1 Test circuit for switching time Pulse input VCC (PW = 100 µ s, Duty cycle = 1/10) IF 50 Ω VOUT RL = 100 Ω 5 PS2521-1,-2,-4,PS2521L-1,-2,-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 250 200 PS2521-1 PS2521L-1 150 100 2.5 mW/˚C PS2521-2, -4 PS2521L-2, -4 2.0 mW/˚C 50 25 0 50 75 100 125 150 PS2521-1 PS2521L-1 100 1.5 mW/˚C PS2521-2, -4 PS2521L-2, -4 50 0 1.2 mW/˚C 25 50 75 100 125 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 70 10 TA = +100 ˚C +75 ˚C +50 ˚C 60 Collector Current IC (mA) Forward Current IF (mA) 100 +25 ˚C 0 ˚C –25 ˚C –55 ˚C 1 0.1 50 40 30 A 0m A 5 = 0m IF 2 mA 10 5 mA 20 10 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 50 10 000 IF = 50 mA 1 000 100 VCE = 80 V 40 V 24 V 10 10 V 5V 1 0.1 –60 –40 –20 0 20 40 60 Ambient Temperature TA (˚C) 6 1.6 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 0.01 0.4 80 100 20 mA 10 mA 10 5 5 mA 2 mA 1 mA 1 0.5 0.1 0.05 0.01 0.0 0.2 0.4 0.6 0.8 Collector Saturation Voltage VCE (sat) (V) 1.0 PS2521-1,-2,-4,PS2521L-1,-2,-4 CURRENT TRANSFER RATIO vs. FORWARD CURRENT ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, 1.4 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 ˚C, IF = 100 mA, VCE = 3 V 100 25 50 75 0.2 0.0 –50 –25 0 VCE = 3 V 200 Sample A B C 150 100 50 0 0.1 0.5 5 50 100 10 Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE VCC = 10 V, IC = 2 mA 50 ton toff 10 tf tr 5 0 –3 –6 –9 RL = 100 Ω 1 kΩ 50 Ω 100 200 500 2k 1k Load Resistance RL (Ω) 100 RL 500 1 k 500 Ω VCC = 5 V 330 µF –12 1 50 1 Ambient Temperature TA (˚C) 100 Switching Time t ( µ s) Current Transfer Ratio CTR (%) 1.2 250 Normalized Gain GV Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE IC = 2 mA 5 k 10 k 50 k 100 k 500 k Frequency f (Hz) LONG TERM CTR DEGRADATION CTR (Relative Value) 1.2 1.0 IF = 5 mA 0.8 20 mA 0.6 40 mA 0.4 0.2 0.0 CTR Test condition IF = 5 mA, VCE = 5 V 1 102 103 104 105 106 Time (Hr) Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed. 7 PS2521-1,-2,-4,PS2521L-1,-2,-4 TAPING SPECIFICATIONS (in millimeters) 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 1.55±0.1 5.6±0.1 8.0±0.1 Tape Direction PS2521L-1-E3, F3 PS2521L-1-E4, F4 R 1.0 φ 21.0±0.8 φ 80.0±5.0 2.0±0.5 φ 13.0±0.5 PS2521L-1-E3, E4: φ 250 PS2521L-1-F3, F4: φ 330 Outline and Dimensions (Reel) 16.4 +2.0 –0.0 Packing: PS2521L-1-E3, E4 1 000 pcs/reel PS2521L-1-F3, F4 2 000 pcs/reel 8 PS2521-1,-2,-4,PS2521L-1,-2,-4 4.3±0.2 10.3±0.1 7.5±0.1 1.55±0.1 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 0.3 10.4±0.1 1.55±0.1 12.0±0.1 Tape Direction PS2521L-2-E3 PS2521L-2-E4 Outline and Dimensions (Reel) φ 21.0±0.8 φ 80.0±5.0 R 1.0 φ 330 2.0±0.5 φ 13.0±0.5 16.4 +2.0 –0.0 Packing: 1 000 pcs/reel 9 PS2521-1,-2,-4,PS2521L-1,-2,-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature 235 °C (package surface temperature) • Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Package Surface Temperature T (˚C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Caution Please avoid to removed the residual flux by water after the first reflow processes. Peak temperature 235 ˚C or below (2) Dip soldering • Temperature 260 °C or below (molten solder temperature) • Time 10 seconds or less • Number of times One • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) 10 PS2521-1,-2,-4,PS2521L-1,-2,-4 [MEMO] 11 PS2521-1,-2,-4,PS2521L-1,-2,-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5