NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA829TF OUTLINE DIMENSIONS (Units in mm) • SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • HIGH COLLECTOR CURRENT: IC MAX = 100 mA PACKAGE OUTLINE TS06 2.1 ± 0.1 1.25 ± 0.1 Q1 DESCRIPTION 0.65 The UPA829TF contains two NE688 NPN high frequency silicon bipolar chips. NEC's new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/ buffer amplifier and other applications. 1 6 2 5 2.0 ± 0.2 +0.10 1.3 0.22 - 0.05 (All Leads) Q2 3 4 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 100 PT Total Power Dissipation 1 Die 2 Die mW mW 110 200 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 0.6 ± 0.1 0.45 0.13 ± 0.05 0 ~ 0.1 Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Note: 1.Operation in excess of any one of these parameters may result in permanent damage. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS UPA829TF TS06 PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 hFE fT Cre |S21E|2 NF hFE1/hFE2 Forward Current Gain1 at VCE = 1 V, IC = 3 mA 80 Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz Feedback Capacitance2 at VCB = 1 V, IE = 0, f = 1 MHz 110 GHz 9.0 pF 0.75 Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz dB 6.5 Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz dB 1.5 hFE Ratio: hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 160 0.85 0.85 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA829TF-T1, 3K per reel. California Eastern Laboratories EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE