PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 OUTLINE DIMENSIONS (Units in mm) FEATURES • • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance +0.1 1.0 –0.05 0.7 3 3 +0.1 0.2 –0.05 0.35 LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 2 1 HIGH COLLECTOR CURRENT: IC MAX = 100 mA +0.1 0.15 –0.05 0.1 0.1 0.2 0.2 DESCRIPTION The NE688M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles. Bottom View +0.1 0.125 –0.05 0.5±0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE688M13 2SC5616 M13 UNITS MIN TYP GHz GHz 4 5 9.5 fT Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz NF Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz dB dB Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz dB dB |S21E|2 1.9 1.7 3 MAX 2.5 4 8 hFE2 Forward Current Gain at VCE = 1 V, IC = 3 mA ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 CRE3 Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz pF 80 145 0.7 0.8 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE688M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2 Collector Current mA 100 PT2 IC Total Power Dissipation mW 140 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE D.C. CURRENT GAIN vs. COLLECTOR CURRENT 200 30 VCE = 1 V 200 µA 180 µA DC Current Gain, hFE Collector Current, IC (mA) 25 160 µA 20 140 µA 120 µA 15 100 µA 80 µA 10 60 µA 100 40 µA 5 IB = 20 µA 0 0 0 5 2.5 7 Collector to Emmiter Voltage, VCE (V) 0.1 0.2 0.5 1 2 5 10 20 50 100 Collector Current, IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V Collector Current, IC (mA) 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.5 1 Base to Emmiter Voltage, VBE (V) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 2/09/2000