PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M23 OUTLINE DIMENSIONS (Units in mm) FEATURES • PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height – Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz • LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 0.25 1 0.4 1.0 • 0.5 2 DESCRIPTION 0.6 0.15 0.2 0.15 BOTTOM VIEW PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 0.55 The NE685M23 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE685 is also available in six different low cost plastic surface mount package styles. 0.25 3 ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz NE685M23 2SC5652 M23 UNITS MIN TYP GHz 12 Noise Figure at VCE = 3 V, IC = 10 mA, f = 2 GHz dB 1.5 Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 2 GHz dB hFE2 Forward Current Gain at VCE = 3 V, IC = 10 mA ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA CRE3 Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF 7 MAX 2.5 10 75 145 0.1 0.1 0.4 0.7 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE685M23 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 5 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 30 PT Total Power Dissipation mW TBD TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 60 VCE = 3 V 50 Collector Current, IC (mA) SYMBOLS Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 40 30 20 10 0 0 TYPICAL PERFORMANCE CURVES (TA = 25°C) 0.4 0.6 0.8 1 Base to Emitter Voltage, VCE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 50 0.2 DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 IB 40 µA step VCE = 3 V 40 DC Current Gain, hFE Collector Current, IC (mA) 400 µA 30 200 µA 20 100 10 IB = 40 µA 10 0 2 4 6 8 0.001 1 10 100 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT NOISE FIGURE/ASSOCIATED GAIN vs. COLLECTOR CURRENT 14 10 20 VCE = 3 V f = 2 GHz 12 VCE = 3 V f = 2 GHz Noise Figure, NF (dB) Gain Bandwidth Product, fT (GHz) 0.1 10 8 6 4 GA 8 16 6 12 4 8 2 4 Associated Gain, GA (dB) 0 2 NF 0 0 1 10 100 Collector Current, IC (mA) EXCLUSIVE NORTH AMERICAN AGENT FOR 0 1 10 100 Collector Current, IC (mA) RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 02/10/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE