NTE457 Silicon N–Channel JFET Transistor General Purpose Amp, Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/°C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IG = –10µA, VDS = 0 –25 – – V VGS = 15V, VDS = 0 – – –1 mA VGS = 15V, VDS = 0, TA = +100°C – – –200 mA OFF Characteristics Gate–Source Breakdown Voltage V(BR)GS S Gate Reverse Current Gate–Source Cutoff Voltage IGSS VGS(off) VDS = 15V, ID = 10nA –0.5 – –6.0 V VGS VDS = 15V, ID = 100µA – – –2.5 V IDSS VDS = 15V, VGS = 0, Note 1 1 3 5 mA Forward Transfer Admittance Common Source |yfs| VDS = 15V, VGS = 0, f = 1kHz, Note 1 1000 – Output Admittance Common Source |yos| VDS = 15V, VGS = 0, f = 1kHz, Note 1 – 10 50 µmhos Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1kHz – 4.5 7.0 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1kHz – 1.5 3.0 pF Gate–Source Voltage ON Characteristics Zero–Gate Voltage Drain Current Small–Signal Characteristics Note 1. Pulse Test: Pulse Width ≤ 630ms, Duty Cycle ≤ 10%. 5000 µmhos .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D S G .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max