NTE NTE492

NTE492
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Note 2. Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Unit
OFF Characteristics
Zero–Gate–Voltage Drain Current
Drain–Source Breakdown Voltage
Gate Reverse Current
IDSS
VDS = 130V, VGS = 0
V(BR)DSX VGS = 0, ID = 100µA
IGSS
VGS = 15V, VDS = 0
–
–
30
nA
200
–
–
V
–
0.01 10.0
nA
ON Characteristics (Note 2)
Gate Threshold Voltage
VGS(Th)
ID = 1mA, VDS = VGS
1.0
–
3.0
V
Static Drain–Source ON Resistance
rDS(on)
VGS = 10V, ID = 100mA
–
4.5
6.0
Ω
VGS = 10V, ID = 250mA
–
4.8
6.4
Ω
Small–Signal Characteristics
Input Capacitance
Ciss
VDS = 25V, VGS = 0, f = 1MHz
–
60
–
pF
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0, f = 1MHz
–
6.0
–
pF
Output Capacitance
Coss
VDS = 25V, VGS = 0, f = 1MHz
–
30
–
pF
200 400
–
mmhos
Forward Transconductance
gfs
VDS = 25V, ID = 250mA
Note 2. Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Unit
Switching Characteristics
Turn–On Time
ton
–
6.0 15.0
ns
Turn–Off Time
toff
–
12
ns
15
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (0.45) Dia Max
.500
(12.7)
Min
D G S
.100 (2.54)
.050 (1.27)
.156
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max