NTE489 Silicon P–Channel JFET Transistor General Purpose AF Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.27mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +135°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1/16” from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +300°C Note 1. Geometry is symmetrical. Units may be operated with source and drain leads interchanged. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 30 – – V – – 200 pA 0.5 – 2.0 V ID = –2mA, VDG = –15V, Note 2 – 15 – pA VDS = –15V, VGS = 0 –2 – –15 mA Static Characteristics Gate–Source Breakdown Voltage Gate Reverse Current Gate–Source Cutoff Voltage Gate Current Saturation Drain Current V(BR)GSS IG = 1µA, VDS = 0 IGSS VGS(off) IG IDSS VGS = 20V, VDS = 0, Note 2 ID = –1nA, VDS = –15V Dynamic Characteristics 15000 µmho Common–Source Forward Transconductance gfs VDS = –15V, VGS = 0, f = 1kHz, Note 3 6000 – Common–Source Output Conductance gos VDS = –15V, VGS = 0, f = 1kHz – – 200 µmho Common–Source Input Capacitance Ciss VDS = –15V, VGS = 0, f = 1MHz – 32 – pF Common–Source Reverse Transfer Capaticance Crss VDS = –15V, VGS = 0, f = 1MHz – 4 – pF Equivalent Short–Circuit Input Noise Voltage en VDS = –10V, ID = –2mA, f = 1kHz – 6 – nV pHz Note 2. Approximately doubles for every 10°C increase in TA. Note 3. Pulse test duration = 2ms. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D G S .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max