NTE490 MOSFET N–Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 90 – V – 0.01 10 nA 0.8 2.0 3.0 V OFF Characteristics Drain–Source Breakdown Voltage Gate Reverse Current V(BR)DSS VGS = 0, ID = 100µA IGSS VGS = 15V, VDS = 0 ON Characteristics (Note 2) Gate Threshold Voltage VGS(Th) VDS = VGS, ID = 1mA Static Drain–Source ON Resistance rDS(on) VGS = 10V, ID = 200mA – 1.8 5.0 Ω VDS = 25V, VGS = 0 – – 0.5 µA gfs VDS = 10V, ID = 250mA – 200 – mmhos Ciss VDS = 10V, VGS = 0, f = 1MHz – – 60 pF Turn–On Time ton ID = 200mA – 4 10 ns Turn–Off Time toff ID = 200mA – 4 10 ns Drain Cutoff Current Forward Transconductance ID(off) Small–Signal Characteristics Input Capacitance Switching Characteristics Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D G S .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max