NTE490 MOSFET N−Ch, Enhancement Mode High Speed Switch TO92 Type Package Absolute Maximum Ratings: Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 60 90 − V − 0.01 10 nA 0.8 2.0 3.0 V OFF Characteristics Drain−Source Breakdown Voltage Gate Reverse Current V(BR)DSS VGS = 0, ID = 1003A IGSS VGS = 15V, VDS = 0 ON Characteristics (Note 2) Gate Threshold Voltage VGS(Th) VDS = VGS, ID = 1mA Static Drain−Source ON Resistance rDS(on) VGS = 10V, ID = 200mA − 1.8 5.0 + VDS = 25V, VGS = 0 − − 0.5 3A gfs VDS = 10V, ID = 250mA − 200 − mmhos Ciss VDS = 10V, VGS = 0, f = 1MHz − − 60 pF Turn−On Time ton ID = 200mA − 4 10 ns Turn−Off Time toff ID = 200mA − 4 10 ns Drain Cutoff Current Forward Transconductance ID(off) Small−Signal Characteristics Input Capacitance Switching Characteristics Note 2. Pulse Test: Pulse Width 3 3003s, Duty Cycle 3 2%. Rev. 10−13 D G S .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D G S .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max