NTE NTE6401

NTE6401
Unijunction Transistor
Description:
The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D Low Peak Point Current: 5µA (Max)
D Low Emitter Reverse Current: .005µA (Typ)
D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
RMS Emitter Current, IE(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Pulse Emitter Current (Note 2), iE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage, VB2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Interbase Voltage, VB2B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to 125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Note 1 Derate 3mW/°C increase in ambient temperature. The total power dissipation (available
power to Emitter and Base–Two) must be limited by the external circuitry.
Note 2 Capacitor discharge – 10µF or less, 30 volts or less
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Intrinsic Standoff Ratio
Symbol
η
Interbase Resistance
rBB
Interbase Resistance Temperature
Coefficient
arBB
Test Conditions
Min
Typ
Max
Unit
VB2B1 = 10V, Note 3
0.56
–
0.75
–
VB2B1 = 3V, IE = 0
4.7
7.0
9.1
kΩ
0.1
–
0.9
%/°C
Note 3. Intrinsic standoff ratio, η is defined by equation:
η = VP – VF
VB2B1
where
VP = Peak Point Emitter Voltage
VB2B1 = Interbase Voltage
VF = Emitter to Base–One Junction Diode Drop (∼ 0.45V @ 10µA)
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter Saturation Voltage
VEB1(sat) VB2B1 = 10V, IE = 50mA, Note 4
–
3.5
–
V
Modulated Interbase Current
IB2(mod)
VB2B1 = 10V, IE = 50mA
–
15
–
mA
VB2E = 30V, IB1 = 0
–
0.005
12
µA
Emitter Reverse Current
IEB20
Peak Point Emitter Current
IP
VB2B1 = 25V
–
1
5
µA
Valley Point Current
IV
VB2B1 = 20V, RB2 = 100Ω
4
6
–
mA
3
5
–
V
Base–One Peak Pulse Voltage
VOB1
Note 4. Use pulse techniques: Pulse Width ~ 300µs, duty cycle ≤ 2% to avoid internal heating due
to interbase modulation which may result in erroneous readings.
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.210 (5.33)
Max
.030 (.762) Max
.500
(12.7)
Min
.018 (0.45)
Base 1
Emitter
45°
Base 2/Case
.041 (1.05)