Silicon MOS FETs (Small Signal) 2SK615 Silicon N-Channel MOS FET For switching unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 1.5 R0.9 R0.9 0.85 ■ Absolute Maximum Ratings (Ta = 25°C) * Symbol 0.55±0.1 Ratings Unit Drain to Source voltage VDS 80 V Gate to Source voltage VGSO 20 V Drain current ID ±0.5 A Max drain current IDP ±1 A * 3 2 2.5 Allowable power dissipation PD 1 W Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 0.45±0.05 1 2.5 1.25±0.05 Parameter 4.5±0.1 0. 7 R 1.0±0.1 0.4 1.5 2.4±0.2 2.0±0.2 3.5±0.1 ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 4.1±0.2 ■ Features 1: Gate 2: Drain 3: Source EIAJ: SC-71 M Type Mold Package PC board: Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm. ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Conditions min Unit IDSS VDS = 60V, VGS = 0 10 µA Gate to Source leakage current IGSS VGS = 20V, VDS = 0 0.1 µA Drain to Source breakdown voltage VDSS IDS = 100µA, VGS = 0 80 Gate threshold voltage Vth ID = 1mA, VDS = VGS 1.5 Drain to Source ON-resistance RDS(on) Forward transfer admittance | Yfs | Output capacitance (Common Source) *1 ID = 0.5A, VGS = 10V Coss V 3.5 2 ID = 0.2A, VDS = 15V, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss *2 max Drain to Source cut-off current Input capacitance (Common Source) Ciss *1 typ 4 V Ω 300 mS 45 pF 30 pF 8 pF Turn-on time ton*1, 2 15 ns Turn-off time *1, 2 20 ns toff Pulse measurement ton, toff measurement circuit Vout 68Ω Vin = 10V t = 1µS f = 1MHZ Vin 50Ω VDD = 30V 10% Vin 10% 90% 90% V Vout out ton toff 1 Silicon MOS FETs (Small Signal) 2SK615 PD Ta ID VDS 1.2 1.2 1.0 0.8 0.6 0.4 4.5V 0.6 4V 0.4 0.6 0.4 0.2 3V 0 40 60 80 100 120 140 160 0 0 400 300 200 100 0 3 4 5 6 Gate to source voltage VGS (V) RDS(on) Ta 6 ID=500mA 5 4 VGS=5V 3 10V 2 1 0 –50 –25 0 25 50 75 Ambient temperature Ta (˚C) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 500 2 6 8 10 0 2 120 80 60 40 Ciss 20 Coss Crss 0 1 3 10 30 100 300 6 8 10 RDS(on) VGS VGS=0 f=1MHz Ta=25˚C 100 4 Gate to source voltage VGS (V) Ciss, Coss, Crss VDS VDS=15V f=1kHz Ta=25˚C 1 4 Drain to source voltage VDS (V) | Yfs | VGS 600 0 2 1000 Drain to source voltage VDS (V) Drain to source ON-resistance RDS(on) (Ω) 20 Ambient temperature Ta (˚C) Forward transfer admittance |Yfs| (mS) 0.8 3.5V 0.2 0 Drain to source ON-resistance RDS(on) (Ω) 1.0 5V 0.8 0.2 0 2 VDS=10V Ta=25˚C VGS=5.5V 1.0 Drain current ID (A) 1.4 1.2 Ta=25˚C Copper foil of the drain portion should have a area of 1cm2 or more and the board thickness should be 1.7mm. Drain current ID (A) Allowable power dissipation PD (W) 1.6 ID VGS 6 ID=500mA 5 4 3 Ta=75˚C 2 25˚C –25˚C 1 0 0 4 8 12 16 20 Gate to source voltage VGS (V)