VTP Process Photodiodes VTP1112 PACKAGE DIMENSIONS inch (mm) CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.6 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed. dual lead TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response. Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP1112 SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. ISC Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 350 mV VOC Temperature Coefficient 2850 K -2.0 mV/°C Dark Current H = 0, VR = 50 V RSH Shunt Resistance H = 0, V = 10 mV TC ISC VOC TC VOC ID CJ Junction Capacitance H = 0, V = 15 V Re Responsivity 940 nm SR Sensitivity @ Peak 30 Typ. 90 µA .20 %/°C 7 .5 nA GΩ 6 pF A/(W/cm2) .033 .55 A/W λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. ±15 Degrees NEP Noise Equivalent Power 8.7 x 10 -14 (Typ.) W ⁄ Hz Specific Detectivity 1.5 x 10 12 (Typ.) cm Hz / W D* 400 50 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA 1150 nm 925 nm 140 V Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 50