VTB Process Photodiodes VTB5051UVJ PACKAGE DIMENSIONS inch (mm) CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a three lead TO-5 package with a UV transmitting “flat” window. Chip is isolated from the case. The third lead allows case to be grounded. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB5051UVJ SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CHARACTERISTIC Short Circuit Current TEST CONDITIONS UNITS H = 100 fc, 2850 K Min. Typ. 85 130 ISC Temperature Coefficient 2850 K .12 Open Circuit Voltage H = 100 fc, 2850 K 490 VOC Temperature Coefficient 2850 K -2.0 Dark Current H = 0, VR = 2.0 V Max. µA .23 %/°C mV mV/°C 250 pA Shunt Resistance H = 0, V = -10 mV .56 GΩ RSH Temperature Coefficient H = 0, V = -10 mV -8.0 %/°C CJ Junction Capacitance H = 0, V = 0 3.0 nF SR Sensitivity 365 nm 0.1 A/W SR Sensitivity 220 nm λrange Spectral Application Range .038 A/W 200 1100 nm λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. ±50 Degrees NEP Noise Equivalent Power 2.1 x 10-14 (Typ.) W ⁄ Hz Specific Detectivity 1.8 x 10 13 (Typ.) cm Hz / W D* 2 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA 920 nm 40 V Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 33