polyfet rf devices P124 PATENTED GOLD METALLIZED General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 4.0 Watts Single Ended Package Style SO8 TM "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 15 Watts o 10.00 C/W Maximum Junction Temperature o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL Gps η VSWR PARAMETER MIN Common Source Power Gain TYP 1.6 A MAX 50 Load Mismatch Tolerance Drain to Source Voltage Gate to Source Voltage 50 V 50 V 30 V 4.0 WATTS OUTPUT ) 10 Drain Efficiency Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 12.5 V, F = 850 MHz % Idq = 0.40 A, Vds = 12.5 V, F = 850 MHz Relative Idq = 0.40 A, Vds = 12.5 V, F = 850 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS V 40 TEST CONDITIONS Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 0.4 mA Vds = 12.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 7 V Ids = 0.04 A, Vgs = Vds gM Forward Transconductance Rdson 1 Ids = 20.00 mA, Vgs = 0V 0.4 Mho Vds = 10V, Vgs = 5V Saturation Resistance 1.20 Ohm Vgs = 20V, Ids = 3.20 A Idsat Saturation Current 4.60 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 15.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 2.4 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 16.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 11/27/2000 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com P124 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE P124 Freq=850Mhz; Vds=12.5Vdc, Idq=.4A 6 F2C 2 DIE CAPACITANCE 12 100 5 11 Linear @ .5 watts 4 Pout 10 P1dB=3 watts 3 Coss Ciss 10 9 Gain 2 Efficiency = 45% Crss 8 1 0 1 7 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 5 10 15 20 25 30 VDS IN VOLTS Pin in Watts IV CURVE ID & GM VS VGS F2C 2 DIE IV CURVE F2C 2 DIE GM & ID vs VGS 10 4.5 4 Id 3.5 3 1 2.5 2 1.5 Gm 0.1 1 0.5 0 0 2 4 6 8 10 12 14 16 0.01 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V 2 Vg = 12V 4 6 8 10 12 14 Vgs in Volts S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 11/27/2000 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com