RF2304 4 GENERAL PURPOSE LOW-NOISE AMPLIFIER Typical Applications • Receive or Transmit Low-Noise Amplifiers • Portable Battery Powered Equipment • FDD and TDD Communication Systems • Wireless LAN • Commercial and Consumer Systems • ISM Band Applications Product Description 0.018 0.014 0.196 0.189 0.050 0.157 0.150 0.034 0.016 Optimum Technology Matching® Applied Si Bi-CMOS SiGe HBT ü Dimensions in mm 0.244 0.229 8° MAX 0° MIN GaAs HBT GENERAL PURPOSE AMPLIFIERS The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less than 300MHz to above 2.5GHz. With +6dBm output power, it may also be used as a driver in transmitter applications, or in highly linear receivers. The device is packaged in an 8-lead plastic package and is self-contained, requiring just an inductor and blocking capacitors to operate. The +6dBm output power, combined with the 1.8dB noise figure at 900MHz allows excellent dynamic range for a variety of receive and transmit applications. Si BJT 4 -A0.008 0.004 0.009 0.007 0.068 0.053 NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity 0.005 with respect to datum "A". Package Style: SOIC-8 GaAs MESFET Si CMOS Features • Single 2.7V to 6.0V Supply • 6dBm Output Power • 8dB Small Signal Gain at 900MHz GND 1 8 NC • 1.8dB Noise Figure at 900MHz GND 2 7 VDD • Low DC Current Consumption of 5mA 6 RF OUT • 300MHz to 2500MHz Operation RF IN 3 GND 4 5 GND Ordering Information RF2304 RF2304 PCBA Functional Block Diagram Rev A5 010717 General Purpose Low-Noise Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-57 RF2304 Absolute Maximum Ratings Parameter Supply Voltage (VDD) DC Current Input RF Power Operating Ambient Temperature Storage Temperature Parameter GENERAL PURPOSE AMPLIFIERS 4 Rating Unit -0.5 to +6.5 40 +10 -40 to +85 -40 to +150 VDC mA dBm °C °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Condition Operating Range Overall Frequency Range Supply Voltage Operating Current (ICC) Operating Ambient Temperature 300 2.7 7 -40 2500 6.0 8.4 11 26 +85 MHz V mA mA °C VCC =3V, Temp=27°C VCC =5V, Temp=27°C 3V Performance Gain Gain Noise Figure Input IP3 OP1dB Gain Noise Figure Input IP3 OP1dB Gain 11.7 8.5 1.9 +6.9 +7.5 9.2 1.7 +8.6 +6.9 8.2 dB dB dB dBm dBm dB dB dBm dBm dB Noise Figure Input IP3 OP1dB 1.7 +10.5 +7.5 dB dBm dBm Freq=300MHz, VCC =3V, Temp=27°C Freq=900MHz, VCC =3V, Temp=27°C Freq=1950MHz, VCC =3V, Temp=27°C Freq=2450MHz, VCC =3V, Temp=27°C 5V Performance Gain Gain Noise Figure Input IP3 OP1dB Gain Noise Figure Input IP3 OP1dB Gain Noise Figure Input IP3 OP1dB 4-58 10 6 12.5 12 1.9 +8.4 +8.7 9.8 1.9 +10.0 +8 8 1.6 +8.0 +6 14 11 dB dB dB dBm dBm dB dB dBm dBm dB dB dBm dBm Freq=300MHz, VCC =5V, Temp=27°C Freq=900MHz, VCC =5V, Temp=27°C Freq=1950MHz, VCC =5V, Temp=27°C Freq=2450MHz, VCC =5V, Temp=27°C Rev A5 010717 RF2304 Function GND 2 3 GND RF IN 4 5 6 GND GND RF OUT 7 VDD2 8 NC Description Interface Schematic Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Same as pin 1. DC coupled RF input. A broadband impedance match is produced by internal shunt resistive feedback. The DC level is approximately 200mV. If a DC path exists in the connected circuitry, an external DCblocking capacitor is required to properly maintain the DC operating point. Same as pin 1. Same as pin 1. RF output. A broadband impedance match is produced by internal shunt resistive feedback. The DC connection to the power supply is provided through an external chip inductor having greater than 150Ω reactance at the operating frequency. An external DC-blocking capacitor is required if the following circuitry is not DC-blocked. VDD 4 RF OUT GENERAL PURPOSE AMPLIFIERS Pin 1 RF IN Bias control connection. This pin is normally connected to the power supply, but can be used to switch the amplifier on and off by switching between power supply voltage and ground. This pin sinks approximately 600µA when connected to VDD, and sources less than 10µA when grounded. No connection. Application Schematic VDD 1 nF 1 8 2 7 3 6 4 5 100 pF RF IN L1 RF Choke 100 pF Rev A5 010717 4-59 RF2304 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1 P1-1 1 2 NC P1-1 VCC C3 1 nF GND 3 GENERAL PURPOSE AMPLIFIERS 4 J1 RF IN 50 Ω µstrip C1 100 pF 1 8 2 7 3 6 4 5 C4 1 nF L1 82 nH C2 100 pF 50 Ω µstrip J2 RF OUT 2304400B Evaluation Board Layout 1.43” x 1.43” 4-60 Rev A5 010717 RF2304 Typical Characteristics - f=900MHz 25 15 20 12 Gain dB, dBm 9 mA 15 P1dB 4 6 GENERAL PURPOSE AMPLIFIERS 10 Idd 5 3 NF 0 0 3 3.5 4 4.5 5 Vdd (V) 20 10 18 9 16 8 14 7 12 6 10 5 8 4 6 3 4 2 2 1 0 Noise Figure (dB) Gain (dB) Typical Characteristics - VDD =5.0V 0 0 500 1000 1500 2000 2500 3000 Frequency (MHz) Rev A5 010717 4-61 RF2304 0.8 2.0 10.0 4.0 5.0 3.0 .0 -2 2.0 1 GHz 10.0 4.0 5.0 3.0 10.0 1 GHz 100 MHz 100 MHz -10.0 Swp Min 0.01GHz .0 -2 -1.0 -0. 6 .4 -0 -0.8 .0 .0 -2 -3 -1.0 .0 -4. 0 -5.0 .4 -0 -0.2 -4. 0 -5.0 -0.2 -0.8 2.0 1.0 -1.0 1.0 0.8 0.6 0.4 0.2 0 10.0 4.0 5.0 3.0 2.0 4 GHz 2.0 0.2 1.0 4.0 5.0 0.2 0.8 1.0 0.8 0.6 2.0 0. 4 0.6 0 3. 10.0 4 GHz -0. 6 Swp Max 6GHz 0. 4 0 3. 0.4 -0.8 -0. 6 .0 -2 0.8 0.6 Swp Max 6GHz 4.0 5.0 0.2 0.8 0.2 0 10.0 3.0 2.0 -1.0 S22 V S22 Vcc=5V CC = 5V 1.0 S22 Vcc=3V VCC = 3V S22 Swp Min 0.01GHz -3 -0.8 Swp Min 0.01GHz -10.0 0.8 .0 -0. 6 1 GHz .4 -0 -3 .4 -0 100 MHz -0.2 .0 -4. 0 -5.0 1 GHz -3 0.6 4.0 5.0 -10.0 300 MHz -0.2 -10.0 0.4 1.0 2 GHz 2 GHz 0 10.0 0.6 0.2 0.2 0.2 3 GHz 0.4 0. 4 0 4.0 5.0 10.0 4 0 3. 4 GHz 4.0 5.0 3 GHz GENERAL PURPOSE AMPLIFIERS 0.6 2.0 0. 4 0 3. 4 GHz Swp Max 6GHz -4. 0 -5.0 0.8 0.6 Swp Max 6GHz 1.0 S11 VVcc=5V S11 CC = 5V 1.0 S11 VVcc=3V S11 CC = 3V Swp Min 0.01GHz S-Parameter Conditions: All plots are taken at ambient temperature=25°C. NOTE: All S11 and S22 plots shown were taken from an RF2304 evaluation board with external input and output tuning components removed and the reference points at the RF IN and RF OUT pins. 4-62 Rev A5 010717 RF2304 Gain versus Temperature IIP3 versus Temperature Frequency = 900 MHz Frequency = 900 MHz 12.0 9.0 Vcc=3V 11.8 Vcc=5V 8.5 11.6 8.0 IIP3 (dBm) Gain (dB) 11.4 11.2 11.0 7.5 7.0 10.8 4 10.6 6.5 GENERAL PURPOSE AMPLIFIERS Vcc=3V 10.4 Vcc=5V 10.2 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 6.0 -60.0 100.0 -40.0 -20.0 0.0 Temperature (°C) 20.0 40.0 60.0 80.0 100.0 Temperature (°C) OP1dB versus Temperature ICC versus Temperature Frequency = 900 MHz 11.0 Frequency = 900 MHz 12.0 Vcc=3V 11.5 Vcc=5V 10.0 11.0 10.5 10.0 ICC (mA) OP1dB (dBm) 9.0 8.0 9.5 9.0 7.0 8.5 8.0 Vcc=3V 6.0 7.5 5.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 7.0 -60.0 100.0 Vcc=5V -40.0 -20.0 Temperature (°C) 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) Gain versus Temperature IIP3 versus Temperature Frequency = 1950 MHz Frequency = 1950 MHz 21.0 10.6 Vcc=3V 10.4 20.5 Vcc=5V 10.2 20.0 10.0 IIP3 (dBm) Gain (dB) 19.5 9.8 9.6 19.0 18.5 9.4 18.0 9.2 Vcc=3V 9.0 17.5 8.8 -60.0 17.0 -60.0 Vcc=5V -40.0 -20.0 0.0 20.0 40.0 Temperature (°C) Rev A5 010717 60.0 80.0 100.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) 4-63 RF2304 OP1dB versus Temperature ICC versus Temperature Frequency = 1950 MHz Frequency = 1950 MHz 12.0 11.0 Vcc=3V 11.5 10.0 Vcc=5V 11.0 10.5 ICC (mA) OP1dB (dBm) 9.0 8.0 10.0 9.5 7.0 4 9.0 GENERAL PURPOSE AMPLIFIERS 6.0 Vcc=3V 8.5 Vcc=5V 5.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 8.0 -60.0 100.0 -40.0 -20.0 Temperature (°C) 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) Gain versus Temperature IIP3 versus Temperature Frequency = 2450 MHz Frequency = 2450 MHz 9.5 22.0 21.5 9.0 21.0 8.5 IIP3 (dBm) Gain (dB) 20.5 8.0 20.0 19.5 19.0 18.5 7.5 18.0 Vcc=3V Vcc=3V 17.5 Vcc=5V 7.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 17.0 -60.0 100.0 Vcc=5V -40.0 -20.0 Temperature (°C) 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) OP1dB versus Temperature ICC versus Temperature Frequency = 2450 MHz 12.0 Frequency = 2450 MHz 12.0 Vcc=3V 11.5 Vcc=5V 11.0 11.0 10.5 10.0 9.0 ICC (mA) OP1dB (dBm) 10.0 8.0 9.5 9.0 8.5 7.0 8.0 6.0 Vcc=3V 7.5 5.0 -60.0 -40.0 -20.0 0.0 20.0 40.0 Temperature (°C) 4-64 60.0 80.0 100.0 7.0 -60.0 Vcc=5V -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 100.0 Temperature (°C) Rev A5 010717 RF2304 S11 of Evaluation Board versus Frequency S22 of Evaluation Board versus Frequency Temperature = +25°C Temperature = +25°C 3.0 2.0 1.8 2.5 1.6 1.4 Output VSWR Input VSWR 2.0 1.5 1.2 1.0 0.8 1.0 0.6 4 0.4 Vcc=3V Vcc=3.0V 0.2 Vcc=5V 0.0 GENERAL PURPOSE AMPLIFIERS 0.5 Vcc=5.0V 0.0 0.0 500.0 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) 0.0 500.0 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) Reverse Isolation (S12) of Evaluation Board versus Frequency, Temperature = +25°C -18.0 Reverse Isolation (dB) -18.2 -18.4 Vcc=3.0V -18.6 Vcc=5.0V -18.8 -19.0 -19.2 0.0 500.0 1000.0 1500.0 2000.0 2500.0 Frequency (MHz) Rev A5 010717 4-65 GENERAL PURPOSE AMPLIFIERS RF2304 4 4-66 Rev A5 010717