RF2129 2 3V, 2.5GHZ LINEAR POWER AMPLIFIER Typical Applications • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery Powered Equipment • Wireless LAN Systems • Broadband Spread Spectrum Systems 2 Product Description .157 .150 .019 .014 1 EXPOSED HEATSINK .010 .004 .196 .189 .123 .107 .050 9 .244 .230 .061 .055 .087 .071 R F2 18 The RF2129 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread spectrum transmitters. The device is packaged in an 8-lead plastic package with a backside ground and is self-contained with the exception of the output matching network and power supply feed line. 8°MAX 0°MIN ro du ct .035 .016 .010 .007 Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Optimum Technology Matching® Applied ü Si BJT GaAs MESFET SiGe HBT Si CMOS VCC2 1 VCC2 2 U pg r ad ed P Si Bi-CMOS GaAs HBT BIAS CIRCUITS Features • Single 3.3V Power Supply • +26dBm Saturated Output Power • 27dB Small Signal Gain • High Power Added Efficiency • Power Down Mode • 1800MHz to 2500MHz Frequency Range 7 RF OUT 6 RF OUT S ee NC 3 8 VCC1 Package Style: PSOP-8 RF IN 4 5 PC PACKAGE BASE Ordering Information RF2129 RF2129 PCBA 3V, 2.5GHz Linear Power Amplifier Fully Assembled Evaluation Board GND Functional Block Diagram Rev B4 000323 RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 2-93 POWER AMPLIFIERS • 2.5GHz ISM Band Applications RF2129 Absolute Maximum Ratings Parameter Parameter Unit -0.5 to +6.0 -0.5 to 3.3 350 +12 -40 to +85 -40 to +150 JEDEC Level 3 VDC V mA dBm °C °C Specification Min. Typ. Max. Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Condition T=25 °C, VCC =3.3V, VPC =3.0V, PIN =0dBm, Freq=2450MHz +24.5 1800 to 2500 +26 IM3 IM5 IM7 Isolation Input Impedance Input VSWR Noise Figure -30 -35 -48 -30 50 2:1 7 -20 Power Down 2.7 P Power Control “ON” PC Input Impedance Power Supply 180 95 50 Current Consumption % dB dB dB dBc -23 -30 -35 dBm Ω PIN =+6dBm In “ON” state In “OFF” state Including second harmonic trap, see application circuit POUT =+17dBm in each tone POUT =+17dBm in each tone POUT =+17dBm in each tone In “OFF” state, PIN =0dBm dB 3.0 V 0.5 V Voltage supplied to control input; device is “ON” Voltage supplied to control input; device is “OFF” kΩ 5 U pg r Operating Voltage Current Consumption 0 ad ed Power Control “OFF” MHz dBm ro du ct Second Harmonic 42 26.5 30 30 -50 24.5 +27 R F2 18 Frequency Range Maximum Saturated Output Power Efficiency at max output power Small Signal Gain Reverse Isolation 9 Overall 3.0 to 5.0 260 150 320 175 V mA mA 100 <1 150 10 mA µA Power Down “ON”, at max output power Power Down “ON”, two-tone test +20dBm average output power Idle current Power Down “OFF” S ee POWER AMPLIFIERS 2 Supply Voltage Power Control Voltage (VPC) DC Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Moisture sensitivity Rating 2-94 Rev B4 000323 RF2129 Function VCC2 Description Interface Schematic Bias supply pin for the first stage. A small tuning capacitor is required to set the desired frequency response. External low frequency bypass capacitors should be connected as shown in the application schematic if no other low frequency decoupling is nearby. VCC2 RF IN 2 BIAS 2 3 4 VCC2 NC RF IN 5 PC Connected internally to pin 1. See pin 1. Not internally connected. RF input. This input is DC coupled, so an external blocking capacitor is required if this pin is connected to a DC path. Power control pin. For maximum power this pin should be 3.3V. A higher voltage is not recommended. For less output power and reduced idle current this voltage may be reduced. See pin 1. VCC1 500Ω PC RF OUT RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter-wave length microstrip line that is RF grounded at the other end, or through an RF inductor that supports the required DC currents. 7 8 RF OUT VCC1 Same as pin 6. Pkg Base GND RF OUT R F2 18 9 6 To RF Stages See pin 5. See pin 1 and 6. S ee U pg r ad ed P ro du ct Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required. See pin 6. Rev B4 000323 2-95 POWER AMPLIFIERS Pin 1 RF2129 Application Schematic 2.45GHz Operation VCC 3.3 µF 2 1 nF 1 nF 100 pF 36 pF POWER AMPLIFIERS 22 pF 3.3 pF 5Ω BIAS CIRCUITS 1 10 pF 8 8.2 nH 2 7 3 6 33 pF RF OUT 33 pF 1.1 pF RF IN 4 5 R F2 18 Power Control 9 PACKAGE BASE Evaluation Board Schematic ro du ct (Download Bill of Materials from www.rfmd.com.) VCC C10 1 nF C9 36 pF ad ed 50 Ω L=0.250" C1 3.3 pF U pg r S ee RF IN 2-96 C7 3.3 µF C13 22 pF R1 5Ω 1 C2 33 pF C12 1 nF P C11 3.3 µF C6 3.3 µF BIAS CIRCUITS C8 10 pF 8 2 7 3 6 L12 8.2 nH RF OUT C4 1.1 pF 50 Ω 4 5 C3 33 pF PACKAGE BASE Power Control Rev B4 000323 RF2129 Evaluation Board Layout 2” x 2” S ee U pg r ad ed P ro du ct R F2 18 9 POWER AMPLIFIERS 2 Rev B4 000323 2-97 S ee U pg r ad ed P ro du ct R F2 18 9 POWER AMPLIFIERS RF2129 2 2-98 Rev B4 000323